• Miniature Size for easy installation
• Low Holding Current Distribution for flexible design
• High Peak Reverse Blocking Voltage of 500V
• Peak On-State Current of 2A

The MJE3055 and MJE2955 Power Transistors are designed for general-purpose switching and amplifier applications. These transistors ensure reliable performance and are ideal for various industrial and electronic projects in Bangladesh.

Key Features:

• DC current gain specified to 10 amperes
• High current gain with f_T = 2.0 MHz (Min) at I_C = 500 mAdc
• Durable and reliable construction
• Suitable for various switching and amplification tasks
• Easy to install and use in different circuits

The 2SC5242 Bipolar Transistor is a high-performance NPN transistor designed for a wide range of applications. With a collector-emitter voltage of 250V, collector current of 17A, and a dissipation of 130W, it offers robust performance and reliability. This transistor is housed in a TO-3P package, making it suitable for various electronic projects.

Key Features:

• Type: NPN
• Collector-Emitter Voltage: 250V
• Collector-Base Voltage: 250V
• Emitter-Base Voltage: 5V
• Collector Current: 17A
• Collector Dissipation: 130W
• DC Current Gain (hfe): 55 to 160
• Transition Frequency: 30 MHz
• Operating and Storage Temperature Range: -55 to +150°C
• Package: TO-3P

The IRF9540 P-Channel MOSFET Transistor is designed for high voltage applications, offering robust performance and reliability. Key features include:

• Drain-Source Voltage (V_ds): -100V
• Gate-Source Voltage (V_gs): 20V
• Drain Current (I_d): -23A
• Power Dissipation (P_tot): 140W
• Type: P-Channel

Discover the TOSHIBA TTC5200 TRANSISTOR, an NPN power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

• Pre-Amplifier: Low Level, Low Noise NPN Transistor
• Current Gain (hFE): 60 to 1000 (Good Linearity)
• Continuous Collector Current (IC): 100mA
• Collector-Emitter Voltage (VCEO): 45V

• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 55V
• Continuous Drain Current (Id): 110A
• Drain-Source Resistance (Rds On): 8mΩ

Discover the S8050 NPN Transistor, ideal for Class B push-pull audio amplifiers and general-purpose applications in Bangladesh. It offers a collector current of up to 700mA and a collector-emitter voltage of up to 20V, making it suitable for a variety of electronic projects.

• Bi-Polar PNP Transistor
• DC Current Gain (hFE): Maximum 300
• Continuous Collector Current (IC): 100mA

MJE340 NPN Power Transistor is ideal for high-voltage electronic circuits. Key features include:

• Type: n-p-n
• Collector-Emitter Voltage: 300 V
• Collector-Base Voltage: 300 V
• Emitter-Base Voltage: 5 V
• Collector Current: 0.5 A
• Collector Dissipation: 20 W
• DC Current Gain (hfe): 30 to 240
• Operating Temperature Range: -65 to +150 °C
• Package: TO-126

The BT134 600V 4A TRIAC is a high-performance bi-directional thyristor designed for efficient power control in various applications. With a reverse peak voltage of 600V and a rating forward current of 4A, it ensures reliable performance. This TRIAC is ideal for through hole mounting.

Key Features:

• Reverse Peak Voltage: 600V
• Rating Forward Current: 4A
• Static Surge Current: 40A
• Terminal Number: 3
• Terminal Pitch: 2mm (0.08")
• Terminal Size: 16 x 1mm (0.63" x 0.04")
• Total Length: 30mm (1.2")
• Body Dimensions: 11 x 7.5 x 2.5mm (0.43" x 0.3" x 0.1")

Package Content: 1x Triacs

The Sil Pad Transistor Pad is made from high-quality silicone rubber, providing excellent thermal conductivity and electrical insulation. Key features include:

• High thermal conductivity for efficient heat dissipation.
• Electrical insulation to protect sensitive electronic components.
• Flexible and easy to apply.
• Available in various thicknesses and sizes.

C1971 RF/VHF/UHF TO-220 Mitsubishi Transistor

The C1971 RF/VHF/UHF TO-220 Transistor by Mitsubishi offers excellent performance for radio frequency applications across a wide frequency range, including VHF and UHF bands. Ideal for high-frequency electronic circuits.

• Manufacturer: Mitsubishi
• Type: NPN Transistor
• Package: TO-220
• Applications: RF, VHF, UHF

Package Includes: 1x C1971 RF/VHF/UHF TO-220 Mitsubishi Transistor

A1015 Bipolar Transistor – PNP Type

The A1015 is a reliable PNP bipolar transistor, ideal for audio frequency amplifier applications and switching purposes. Key features include:

• Type: PNP
• Collector-Emitter Voltage: -50V
• Collector-Base Voltage: -50V
• Emitter-Base Voltage: -5V
• Collector Current: -0.15A
• Collector Dissipation: 0.4W
• DC Current Gain (hFE): 70 to 400
• Transition Frequency: 80MHz
• Operating and Storage Junction Temperature Range: -55°C to +125°C
• Package: TO-92

Discover the TOSHIBA TTA1943 TRANSISTOR, a PNP power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

The C106D Thyristor is a high-performance component designed for efficient power switching applications. With a nominal current of 4A and a reverse voltage rating (URRM) of 600V, this thyristor ensures reliable performance. Perfect for through hole mounting with a TO-225AA package.

Key Features:

• Nominal Current: 4A
• Reverse Voltage Rating (URRM): 600V
• Mounting Form: TO-225AA