C3355 NPN RF Transistor

The C3355 is a high-performance NPN RF transistor, designed for various radio frequency applications. Key features include:

• Type Designator: 2SC3355
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 0.6W
• Maximum Collector-Base Voltage (Vcb): 20V
• Maximum Collector Current (Ic max): 0.1A
• Maximum Operating Junction Temperature (Tj): 125°C
• Transition Frequency (ft): 6500MHz
• Forward Current Transfer Ratio (hFE), MIN: 35
• Package: TO-92

The BT134 600V 4A TRIAC is a high-performance bi-directional thyristor designed for efficient power control in various applications. With a reverse peak voltage of 600V and a rating forward current of 4A, it ensures reliable performance. This TRIAC is ideal for through hole mounting.

Key Features:

• Reverse Peak Voltage: 600V
• Rating Forward Current: 4A
• Static Surge Current: 40A
• Terminal Number: 3
• Terminal Pitch: 2mm (0.08")
• Terminal Size: 16 x 1mm (0.63" x 0.04")
• Total Length: 30mm (1.2")
• Body Dimensions: 11 x 7.5 x 2.5mm (0.43" x 0.3" x 0.1")

Package Content: 1x Triacs

• Pre-Amplifier: Low Level, Low Noise NPN Transistor
• Current Gain (hFE): 60 to 1000 (Good Linearity)
• Continuous Collector Current (IC): 100mA
• Collector-Emitter Voltage (VCEO): 45V

The 2SC4793 NPN transistor is designed for high voltage and high frequency applications. With a maximum collector power dissipation of 20W, this silicon transistor provides excellent performance in various electronic circuits. Key features include:

• Type Designator: 2SC4793
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector-Base Voltage: 230V
• Maximum Collector-Emitter Voltage: 230V
• Maximum Emitter-Base Voltage: 5V
• Maximum Collector Current: 1A
• Maximum Temperature: 150°C
• Transition Frequency: 100MHz
• Collector Capacitance: 20pF
• Minimum Forward Current Transfer Ratio: 100

MJE340 NPN Power Transistor is ideal for high-voltage electronic circuits. Key features include:

• Type: n-p-n
• Collector-Emitter Voltage: 300 V
• Collector-Base Voltage: 300 V
• Emitter-Base Voltage: 5 V
• Collector Current: 0.5 A
• Collector Dissipation: 20 W
• DC Current Gain (hfe): 30 to 240
• Operating Temperature Range: -65 to +150 °C
• Package: TO-126

The 20N60 IGBT is a high-performance insulated-gate bipolar transistor (IGBT) designed for efficient power switching applications. With a maximum collector-emitter voltage (VCE) of 600V and a continuous collector current (IC) of 20A, it ensures reliable performance. Available in PG-TO-220-3-1 and PG-TO-247-3 packages.

Key Features:

• Type: SGP20N60 and SGW20N60
• Collector-Emitter Voltage (VCE): 600V
• Continuous Collector Current (IC): 20A
• Saturation Voltage (VCE(sat)): 2.4V
• Maximum Junction Temperature (Tj): 150°C
• Marking: G20N60
• Package: PG-TO-220-3-1 and PG-TO-247-3

Specifications:

• Type: PNP
• Collector-Emitter Voltage: -60V
• Collector-Base Voltage: -60V
• Emitter-Base Voltage: -5V
• Collector Current: -3A
• Collector Dissipation: 40W
• DC Current Gain (hfe): 10 to 50
• Transition Frequency: 3 MHz
• Operating Temperature: -65 to +150°C
• Storage Temperature: -65 to +150°C
• Package: TO-220

Package:

• 1 x TIP32C Bipolar Transistor

• Type: PNP High-Voltage Transistor
• Collector-Base Voltage: 160V
• Collector-Emitter Voltage: 150V
• Emitter-Base Voltage: 5V

The 2SA1962 Bipolar Transistor is a high-performance PNP transistor designed for various electronic applications. It features a collector-emitter voltage of -250V, a collector current of -17A, and a collector dissipation of 130W, ensuring robust performance and reliability. This transistor is housed in a TO-3P package, making it ideal for demanding environments.

Key Features:

• Type: PNP
• Collector-Emitter Voltage: -250V
• Collector-Base Voltage: -250V
• Emitter-Base Voltage: -5V
• Collector Current: -17A
• Collector Dissipation: 130W
• DC Current Gain (hfe): 55 to 160
• Transition Frequency: 30 MHz
• Operating and Storage Temperature Range: -50 to +150°C
• Package: TO-3P

• NPN transistor with plastic casing for durability.
• Continuous collector current (IC) of 1.5A for high-power applications.
• High collector-emitter voltage (VCE) of 80V.
• Base current (Ib) of 0.5A for efficient switching.

• High current capacity for power applications
• Designed for switching and amplification
• Low saturation voltage
• Robust construction for reliable performance

• High power handling with 80A continuous drain current and 100V drain-to-source voltage.
• Low Rds On (15mΩ @ 40A, 10V) for minimal conduction losses.
• Wide gate drive voltage range with ±20V max Vgs.
• High efficiency due to low gate charge (182 nC @ 10V).

• PNP Transistor: Suitable for low to medium power amplification and switching circuits.
• High Current Handling: Supports up to 600mA of collector current.
• Wide Voltage Range: Maximum collector-emitter breakdown of 40V.
• DC Current Gain: Provides a minimum current gain of 100 at 150mA and 2V.

Specifications:

• Vr rm: 400V
• It (rms): 0.8A
• Pgm: 0.1W
• Vgrm: 5V
• Vgt: 0.8V
• Ih: 5mA
• Manufacturer: Motorola
• Model Number: MCR100-6

Package:

• 1x MCR100-6 MCR100-6G MCR100 0.8A 400V SCR Thyristor Transistor TO-92 Package

• Darlington Medium-power NPN Transistor
• High DC Current Gain (hFE), typically 1000
• Continuous Collector Current (IC): 5A
• Collector-Emitter Voltage (VCE): 100V

BD136 PNP Power Transistor

The BD136 is a versatile PNP power transistor, ideal for switching and amplification circuits. Key features include:

• Plastic casing PNP Transistor
• High DC Current Gain (hFE), typically 80 at IC=10mA
• Continuous Collector current (IC) of 1.5A
• Collector-Emitter voltage (VCE) of 45V
• Collector-Base voltage (VCB) of 45V
• Emitter Base Breakdown Voltage (VBE) of 5V
• DC current gain (hFE) of 40 to 250
• Available in TO-225 package