Explore the MJL4281 High Watt Transistor, a high-performance NPN bipolar junction transistor from ON Semiconductor. With a power dissipation of 230W, it is perfect for demanding electronic applications. This transistor is RoHS compliant and features a through-hole mounting style for easy integration into your projects.

Key Features:

• Category: Bipolar Transistors - BJT
• Collector-Emitter Voltage (VCEO Max): 350V
• Collector-Base Voltage (VCBO): 350V
• Emitter-Base Voltage (VEBO): 5V
• Maximum DC Collector Current: 15A
• Gain Bandwidth Product (fT): 35 MHz
• Maximum Operating Temperature: +150°C
• Package/Case: TO-264-3
• Mounting Style: Through Hole
• RoHS compliant

• High-Frequency Performance: Transition frequency up to 3000 MHz.
• Compact and Durable: TO51 package for efficient space usage.
• Low Capacitance: 1.2 pF collector capacitance ensures minimal signal loss.

A1015 Bipolar Transistor – PNP Type

The A1015 is a reliable PNP bipolar transistor, ideal for audio frequency amplifier applications and switching purposes. Key features include:

• Type: PNP
• Collector-Emitter Voltage: -50V
• Collector-Base Voltage: -50V
• Emitter-Base Voltage: -5V
• Collector Current: -0.15A
• Collector Dissipation: 0.4W
• DC Current Gain (hFE): 70 to 400
• Transition Frequency: 80MHz
• Operating and Storage Junction Temperature Range: -55°C to +125°C
• Package: TO-92

• High-Quality Original Japan Make: Authentic TOSHIBA C5198 transistor for reliable performance.
• High Power Handling: Designed for high-power audio amplification and switching.
• Low Distortion: Ensures clean and accurate signal output.

The D2498 Silicon NPN Transistor is designed for high voltage applications, particularly in TV horizontal deflection and color TV circuits. Key features include:

• Collector-Emitter Voltage (U_ce): 600V
• Collector Current (I_c): 6A
• Type: NPN Transistor

2SC3858 High-Power NPN Transistors are designed for high-performance electronic applications. These transistors offer:

• Type: NPN
• Collector-Emitter Voltage: 200 V
• Collector-Base Voltage: 200 V
• Emitter-Base Voltage: 6 V
• Collector Current: 17 A
• Collector Dissipation: 200 W
• DC Current Gain (hfe): 50 to 180
• Transition Frequency: 20 MHz
• Operating Temperature Range: -55 to +150 °C
• Package: MT-200

The MJE3055 and MJE2955 Power Transistors are designed for general-purpose switching and amplifier applications. These transistors ensure reliable performance and are ideal for various industrial and electronic projects in Bangladesh.

Key Features:

• DC current gain specified to 10 amperes
• High current gain with f_T = 2.0 MHz (Min) at I_C = 500 mAdc
• Durable and reliable construction
• Suitable for various switching and amplification tasks
• Easy to install and use in different circuits

• Advanced HEXFET® Technology for high efficiency.
• Ultra-low on-resistance (Rds On) for minimal power loss.
• Fast switching speed, ideal for high-frequency applications.
• Dynamic dv/dt rating for improved performance.

• High Power NPN Transistor – Suitable for low-frequency applications
• Single Transistor Configuration – Easy to integrate into circuits
• Compact SOT-32-3 Package – Space-efficient and reliable
• Surface-Mount Technology (SMT/SMD) – Ensures secure placement on PCBs

• High continuous drain current of up to 35A.
• Handles pulsed drain currents up to 50A.
• Robust drain-to-source breakdown voltage of 60V.
• Low drain-source resistance (0.018 Ohms) for minimal power loss.

The BTA16-600V 16A TRIAC is a high-performance component designed for efficient power switching applications. With a non-repetitive state current of 168A and a repetitive off-state voltage of 600V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220-3 package.

Key Features:

• Non-Repetitive State Current: 168A
• Rated Repetitive Off-State Voltage VDRM: 600V
• Off-State Leakage Current @ VDRM IDRM: 5μA
• On-State Voltage: 1.55V
• Holding Current Ih Max: 50mA
• Gate Trigger Voltage - Vgt: 1.3V
• Gate Trigger Current - Igt: 50mA
• Maximum Operating Temperature: +125°C
• Minimum Operating Temperature: -40°C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Packaging: Tube

Series: BTA16-600B

• Original Brand New Transistor Amplifier Chip
• Voltage: 160V
• Current: 12A
• Package Type: TO-3P

The 78L05 5V 100mA Positive Voltage Regulator is designed to provide a stable 5V output for small loads up to 100mA. Ideal for various power management applications, it features:

• 5V Positive Voltage Regulator
• Output Current up to 100mA
• Maximum Input Voltage of 30V
• Operating current (IQ) of 5mA
• Internal Thermal Overload and Short Circuit Protection

• Original Japanese Quality: 100% authentic TOSHIBA A1941 transistor.
• High Power Output: Perfect for high-power audio amplification and switching.
• Low Distortion: Ensures clear and accurate audio signal transmission.

• Drain-Source Voltage (Vds): -55V
• Gate-Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id): -74A
• Power Dissipation (Ptot): 200W

C3355 NPN RF Transistor

The C3355 is a high-performance NPN RF transistor, designed for various radio frequency applications. Key features include:

• Type Designator: 2SC3355
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 0.6W
• Maximum Collector-Base Voltage (Vcb): 20V
• Maximum Collector Current (Ic max): 0.1A
• Maximum Operating Junction Temperature (Tj): 125°C
• Transition Frequency (ft): 6500MHz
• Forward Current Transfer Ratio (hFE), MIN: 35
• Package: TO-92