The TP 34N20 IGBT is a high-performance insulated-gate bipolar transistor designed for efficient power switching applications. With a voltage rating of 200V and a continuous current of 34A, it ensures reliable performance. The TO-220 package makes it easy to integrate into various circuit designs.
Key Features:
Safe Shopping
Data Protection.
Fast Delivery
Delivery all over Bangladesh.
Guarantee safe & secure checkout
The TP 34N20 IGBT is a robust and efficient component designed for high-power switching applications. It features a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 34A, making it suitable for demanding electrical loads. With a power dissipation of 136W, this IGBT ensures reliable performance even under high-power conditions.
The TO-220 package provides easy integration into various circuit designs, making it a versatile choice for both professional and DIY electronics projects. The TP 34N20 IGBT is ideal for applications such as motor control, power supply designs, and general-purpose power switching.
Uses of the Product:
Benefits of the Product:
Frequently Asked Questions:
Q: What is the drain-to-source voltage (Vdss) of the TP 34N20 IGBT?
A: The drain-to-source voltage is 200V.
Q: What is the continuous drain current (Id) of the TP 34N20 IGBT?
A: The continuous drain current is 34A.
Q: What is the power dissipation of the TP 34N20 IGBT?
A: The power dissipation is 136W.
Tips for Use:
The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.
Key Features:
Specifications:
Package:
The 2SA1943 PNP Epitaxial Silicon Transistor delivers outstanding performance for high-power applications. This high-reliability transistor is capable of handling high currents and voltages, making it ideal for demanding electronic circuits.
Key Features:
Pack includes: 1x 2SA1943 PNP Epitaxial Silicon Transistor
The IRF840 N-Channel MOSFET is a high-performance power MOSFET designed for efficient switching applications. With a high voltage rating and robust current handling capabilities, it is ideal for various power control circuits.
Key Features:
BC848 SMD General Purpose NPN Transistor
The BC848 SMD is a versatile NPN transistor designed for general-purpose applications. This SMD plastic package component operates efficiently across a wide temperature range, making it suitable for various switching and amplification tasks.
The D880 NPN Power Transistor is designed for audio amplification and switching applications. Key features include:
Introducing the BU807 NPN Transistor, a high-efficiency silicon transistor ideal for various electronic applications. It features a maximum collector-emitter voltage of 150V and a high current capacity of 8A, making it suitable for demanding tasks. Key features include:
D400 NPN Silicon Transistor
The D400 NPN Silicon Transistor is a reliable and efficient transistor designed for a wide range of electronic applications. Featuring low power consumption and high performance, this transistor is perfect for enhancing the functionality of your electronic circuits. Key features include:
The IRF540 N Channel MOSFET is an ideal choice for high-power switching applications. Capable of handling over 33A and 100V, this MOSFET comes in a TO-220 package, which fits perfectly into breadboards and perfboards. With a very low Rds(on) down to 44 milliohm and a low threshold voltage of less than 2.5V, it can be directly controlled by a microcontroller running on 5V logic. Heat sinking is simple with the TO-220 package, but thanks to the low Rds(on), you can often manage without additional heat sinking for high loads.
Key Features:
Get reliable power performance with our High-Performance 2SB337 Silicon PNP Power Transistors. Designed for various electronic applications, these transistors provide excellent efficiency and durability.
