2SA1216 Audio Amp Transistor

Experience superior audio amplification with the 2SA1216 Audio Amp Transistor. Designed for high power performance and reliability, this transistor is perfect for enhancing your audio projects.

• Model: 2SA1216
• Parameters: 200W/180V/17A
• Package: 1x 2SA1216 Audio Amp Transistor

Enhance your electronic circuits with the Bangladesh MPSA42 NPN Output Transistor. This high-voltage, high-frequency transistor is perfect for applications requiring reliable performance and efficiency.

• Collector-Emitter Voltage (Vceo): 300V
• Collector-Base Voltage (Vcbo): 300V
• Collector Current (Ic): 0.5A
• hfe: 40 @ 10mA
• Power Dissipation (Ptot): 625mW
• Current-Gain-Bandwidth (ftotal): 50MHz
• Type: NPN

MJE340 NPN Power Transistor is ideal for high-voltage electronic circuits. Key features include:

• Type: n-p-n
• Collector-Emitter Voltage: 300 V
• Collector-Base Voltage: 300 V
• Emitter-Base Voltage: 5 V
• Collector Current: 0.5 A
• Collector Dissipation: 20 W
• DC Current Gain (hfe): 30 to 240
• Operating Temperature Range: -65 to +150 °C
• Package: TO-126

• Type: PNP Bipolar Junction Transistor (BJT)
• High Voltage Handling: Up to -250V Collector-Emitter Voltage (Vce)
• Compact TO-92 Package: Easy to mount and use
• Low Power Consumption: Suitable for low-current applications

✔ Avalanche Rugged Technology – Ensures high durability and reliability
✔ Rugged Gate Oxide Technology – Provides better gate protection
✔ Lower Input Capacitance – Reduces switching losses for efficiency
✔ Improved Gate Charge – Enhances performance in high-frequency applications

• PNP polarity transistor for power applications
• High DC current gain of 25 at 1.5A and 4V
• Maximum operating frequency of 3 MHz
• Maximum collector-emitter voltage of 100V

Discover the TOSHIBA TTA1943 TRANSISTOR, a PNP power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

• High-Frequency Performance: Transition frequency up to 3000 MHz.
• Compact and Durable: TO51 package for efficient space usage.
• Low Capacitance: 1.2 pF collector capacitance ensures minimal signal loss.

• Advanced HEXFET® Technology for high efficiency.
• Ultra-low on-resistance (Rds On) for minimal power loss.
• Fast switching speed, ideal for high-frequency applications.
• Dynamic dv/dt rating for improved performance.

• N-Channel power MOSFET for high-efficiency switching applications
• Maximum drain-to-source voltage (VDS): 200V
• Continuous drain current (ID): 9A
• High pulsed drain current: 36A

The 2N7000 MOSFET Transistor from Fairchild Semiconductor is a highly efficient component suitable for a variety of electronic applications. It features a maximum continuous drain current of 200mA and a maximum drain source voltage of 60V.

Key Features:

• Maximum Continuous Drain Current: 200mA
• Maximum Drain Source Voltage: 60V
• Maximum Drain Source Resistance: 5Ω
• Gate Threshold Voltage (VGS): Min = 0.8V, Max = 3V
• Maximum Power Dissipation: 400mW

2SA1494 Transistors - Bipolar (BJT) - Single

The 2SA1494 is a high-performance PNP Bipolar Power Transistor designed for a variety of applications, including audio and general-purpose use. It offers high collector current and power dissipation, making it an excellent choice for demanding tasks.

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 17A
• Collector Emitter Voltage (V_ceo): 200V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
• Collector Cutoff Current (Max): 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8A, 4V
• Power Dissipation (P_d): 200W
• Transition Frequency (f_t): 20MHz
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: MT-200

The TFK897-E NPN Transistor is designed for high-performance switching and amplification applications. Key features include:

• Collector-Emitter Voltage (V_ce): 80V
• Collector-Base Voltage (V_cb): 80V
• Emitter-Base Voltage (V_eb): 5V
• Collector Current (I_c): 3A
• Power Dissipation (P_tot): 1.5W
• DC Current Gain (h_FE): 100-300
• Transition Frequency (f_t): 150MHz
• Package: TO-92

Discover the 2N2222 NPN Transistor, ideal for general-purpose low-power amplifying or switching applications. With a maximum collector current of 600mA and a high transition frequency of 300 MHz, it's perfect for various electronic projects.

• High current capacity for power applications
• Designed for switching and amplification
• Low saturation voltage
• Robust construction for reliable performance

The C106D Thyristor is a high-performance component designed for efficient power switching applications. With a nominal current of 4A and a reverse voltage rating (URRM) of 600V, this thyristor ensures reliable performance. Perfect for through hole mounting with a TO-225AA package.

Key Features:

• Nominal Current: 4A
• Reverse Voltage Rating (URRM): 600V
• Mounting Form: TO-225AA