• Low saturation voltage
• Simple drive requirements
• High safe operating area
• For low distortion complementary designs

• High current capacity, capable of continuous drain current of 130-210A
• Supports a drain-to-source voltage of 60V
• Avalanche energy rating of 800 mJ for reliable performance under high-stress conditions
• Junction and storage temperature range from -55 to 175°C

The BTA41 40A 600V TRIAC is a robust component designed for high-power switching applications. With a rated average on-state current of 40A and a repetitive peak reverse voltage of 600V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TOP3 package.

Key Features:

• Rated Average On-State Current: 40A
• Mounting Type: Through Hole
• Package Type: TOP3
• Maximum Gate Trigger Current: 100mA
• Repetitive Peak Reverse Voltage: 600V
• Surge Current Rating: 420A
• Pin Count: 3
• Maximum Gate Trigger Voltage: 1.3V
• Repetitive Peak Forward Blocking Voltage: 600V
• Maximum Holding Current: 80mA
• Repetitive Peak Off-State Current: 0.005mA
• Maximum Operating Temperature: +125°C
• Minimum Operating Temperature: -40°C
• Peak On-State Voltage: 1.55V

Package includes: 1x BTA41-600B

Discover the S8050 NPN Transistor, ideal for Class B push-pull audio amplifiers and general-purpose applications in Bangladesh. It offers a collector current of up to 700mA and a collector-emitter voltage of up to 20V, making it suitable for a variety of electronic projects.

The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.

Key Features:

• Part NO.: FQA24N60
• Package: TO-3P
• FET Type: MOSFET N-Channel, Metal Oxide
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 23.5A
• Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) @ Vgs: 145nC @ 10V
• Input Capacitance (Ciss) @ Vds: 5500pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Supplier: SICSTOCK

• Medium power transistor with hfe gain up to 50
• Improved linearity of hfe gain
• Maximum voltage across collector and emitter: 100V
• Maximum current allowed through collector: 3A DC

• Transistor Type: NPN
• Max Collector Current (IC): 5A
• Max Collector-Emitter Voltage (VCE): 20V
• Max Collector-Base Voltage (VCB): 40V

Discover the MJL4302 High Watt Transistor, a high-performance PNP bipolar junction transistor from ON Semiconductor. With a power dissipation of 230W, it is perfect for demanding electronic applications. This transistor is RoHS compliant and features a through-hole mounting style for easy integration into your projects.

Key Features:

• Category: Bipolar Transistors - BJT
• Collector-Emitter Voltage (VCEO Max): 350V
• Collector-Base Voltage (VCBO): 350V
• Emitter-Base Voltage (VEBO): 5V
• Maximum DC Collector Current: 15A
• Gain Bandwidth Product (fT): 35 MHz
• Maximum Operating Temperature: +150°C
• Package/Case: TO-264-3
• Mounting Style: Through Hole
• RoHS compliant

• Type: PNP Bipolar Junction Transistor (BJT)
• High Voltage Handling: Up to -250V Collector-Emitter Voltage (Vce)
• Compact TO-92 Package: Easy to mount and use
• Low Power Consumption: Suitable for low-current applications

The 4N26 Optocoupler is a high-performance component designed for electrical isolation and efficient signal transmission. With a voltage isolation of 7500Vpk and a current transfer ratio of at least 20%, it ensures reliable performance. This optocoupler comes in a 6-DIP package for through hole mounting.

Key Features:

• Part NO.: 4N26M
• Package: 6-DIP (0.300, 7.62mm)
• Number of Channels: 1
• Input Type: DC
• Voltage - Isolation: 7500Vpk
• Current Transfer Ratio (Min): 20% @ 10mA
• Voltage - Output: 30V
• Current - DC Forward (If): 60mA
• Vce Saturation (Max): 500mV
• Output Type: Transistor with Base
• Mounting Type: Through Hole

Supplier: SICSTOCK

• High-Frequency Performance: Transition frequency up to 3000 MHz.
• Compact and Durable: TO51 package for efficient space usage.
• Low Capacitance: 1.2 pF collector capacitance ensures minimal signal loss.

• Original Japanese Quality: 100% authentic TOSHIBA A1941 transistor.
• High Power Output: Perfect for high-power audio amplification and switching.
• Low Distortion: Ensures clear and accurate audio signal transmission.

A1015 Bipolar Transistor – PNP Type

The A1015 is a reliable PNP bipolar transistor, ideal for audio frequency amplifier applications and switching purposes. Key features include:

• Type: PNP
• Collector-Emitter Voltage: -50V
• Collector-Base Voltage: -50V
• Emitter-Base Voltage: -5V
• Collector Current: -0.15A
• Collector Dissipation: 0.4W
• DC Current Gain (hFE): 70 to 400
• Transition Frequency: 80MHz
• Operating and Storage Junction Temperature Range: -55°C to +125°C
• Package: TO-92

• High voltage NPN transistor with 160V rating
• Maximum collector current of 1A
• Power dissipation up to 900mW
• Compact TO-92 package for versatile use

• Low voltage, high current PNP transistor.
• High current gain (hFE: 85 to 300).
• Suitable for Class B push-pull transistor configurations.
• Compact TO-92 package for easy integration.