The 4N26 Optocoupler is a high-performance component designed for electrical isolation and efficient signal transmission. With a voltage isolation of 7500Vpk and a current transfer ratio of at least 20%, it ensures reliable performance. This optocoupler comes in a 6-DIP package for through hole mounting.

Key Features:

• Part NO.: 4N26M
• Package: 6-DIP (0.300, 7.62mm)
• Number of Channels: 1
• Input Type: DC
• Voltage - Isolation: 7500Vpk
• Current Transfer Ratio (Min): 20% @ 10mA
• Voltage - Output: 30V
• Current - DC Forward (If): 60mA
• Vce Saturation (Max): 500mV
• Output Type: Transistor with Base
• Mounting Type: Through Hole

Supplier: SICSTOCK

Discover the TOSHIBA TTC5200 TRANSISTOR, an NPN power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

• High Voltage & Current Handling: 100V Drain-Source voltage and 42A continuous drain current.
• Low Rds On for improved power efficiency.
• 160W Maximum Power Dissipation, ensuring stable performance under load.
• Gate-Source Voltage up to 20V for flexible control.

• Type: PNP Bipolar Small Signal Transistor
• Collector-Base Voltage (Vcb): 40V
• Collector-Emitter Voltage (Vce): 40V
• Emitter-Base Voltage (Veb): 5V

• PNP transistor with high current capacity
• Designed for switching and amplification in power applications
• High collector-to-emitter voltage
• Capable of handling pulse currents up to 13A

Discover the S8050 NPN Transistor, ideal for Class B push-pull audio amplifiers and general-purpose applications in Bangladesh. It offers a collector current of up to 700mA and a collector-emitter voltage of up to 20V, making it suitable for a variety of electronic projects.

The C1815 NPN General Purpose Transistor is a versatile component designed for various electronic applications. Key features include:

• Collector-Emitter Voltage (V_ceo): 50V
• Collector-Base Voltage (V_cbo): 60V
• Collector Current (I_c): 0.15A
• h_fe: 70-700 @ 2mA
• Power Dissipation (P_tot): 400mW
• Current-Gain-Bandwidth (f_total): 80MHz
• Type: NPN

• Type: PNP Bipolar Junction Transistor (BJT)
• High Voltage Handling: Up to -250V Collector-Emitter Voltage (Vce)
• Compact TO-92 Package: Easy to mount and use
• Low Power Consumption: Suitable for low-current applications

Introducing the BU806 NPN Transistor, a high-performance silicon transistor designed for a wide range of electronic applications. It boasts impressive specifications, including a maximum collector power dissipation of 60W and a maximum collector-emitter voltage of 200V. Key features include:

• Type Designator: BU806
• Material of Transistor: Si (Silicon)
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 60 W
• Maximum Collector-Base Voltage (Vcb): 400 V
• Maximum Collector-Emitter Voltage (Vce): 200 V
• Maximum Emitter-Base Voltage (Veb): 5 V
• Maximum Collector Current (Ic max): 8 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Forward Current Transfer Ratio (hFE), MIN: 100
• Package: TO220

• Compact TO92 package for easy circuit integration.
• Suitable for low-power amplification and switching applications.
• Handles up to 200mA collector current.
• High temperature resistance up to 125°C.

• PNP Transistor: Suitable for low to medium power amplification and switching circuits.
• High Current Handling: Supports up to 600mA of collector current.
• Wide Voltage Range: Maximum collector-emitter breakdown of 40V.
• DC Current Gain: Provides a minimum current gain of 100 at 150mA and 2V.

• Type: NPN Medium Power Transistor
• Application: Ideal for voltage regulation, relay driver, generic switch, audio power amplifier, and DC-DC converter applications
• Peak Collector Current: 6A
• Collector to Base Voltage: 60V

✔ Avalanche Rugged Technology – Ensures high durability and reliability
✔ Rugged Gate Oxide Technology – Provides better gate protection
✔ Lower Input Capacitance – Reduces switching losses for efficiency
✔ Improved Gate Charge – Enhances performance in high-frequency applications

MJE340 NPN Power Transistor is ideal for high-voltage electronic circuits. Key features include:

• Type: n-p-n
• Collector-Emitter Voltage: 300 V
• Collector-Base Voltage: 300 V
• Emitter-Base Voltage: 5 V
• Collector Current: 0.5 A
• Collector Dissipation: 20 W
• DC Current Gain (hfe): 30 to 240
• Operating Temperature Range: -65 to +150 °C
• Package: TO-126

• Type: PNP High-Voltage Transistor
• Collector-Base Voltage: 160V
• Collector-Emitter Voltage: 150V
• Emitter-Base Voltage: 5V

Enhance your electronic circuits with the Bangladesh C2073 NPN Power Transistor. This high-performance transistor is perfect for applications requiring reliable and efficient power dissipation and voltage regulation.

• Type Designator: 2SC2073
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector Power Dissipation: 25W
• Maximum Collector-Base Voltage: 150V
• Maximum Collector-Emitter Voltage: 150V
• Maximum Emitter-Base Voltage: 5V
• Maximum Collector Current: 1.5A
• Maximum Temperature: 150°C
• Transition Frequency: 1MHz
• Collector Capacitance: 70pF
• Forward Current Transfer Ratio (hFE): Min 40
• Package: TO220