The 2SC5242 Bipolar Transistor is a high-performance NPN transistor designed for a wide range of applications. With a collector-emitter voltage of 250V, collector current of 17A, and a dissipation of 130W, it offers robust performance and reliability. This transistor is housed in a TO-3P package, making it suitable for various electronic projects.

Key Features:

• Type: NPN
• Collector-Emitter Voltage: 250V
• Collector-Base Voltage: 250V
• Emitter-Base Voltage: 5V
• Collector Current: 17A
• Collector Dissipation: 130W
• DC Current Gain (hfe): 55 to 160
• Transition Frequency: 30 MHz
• Operating and Storage Temperature Range: -55 to +150°C
• Package: TO-3P

The 2SC5200 NPN Epitaxial Silicon Transistor offers reliable performance for your high-power amplifier needs. This robust transistor is designed to handle high currents and voltages with ease, ensuring consistent performance in various applications.

Key Features:

• Collector-Base Voltage (VCBO): 230V
• Collector-Emitter Voltage (VCEO): 230V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 15A
• Base Current (IB): 1.5A
• Collector Power Dissipation (PC): 150W (Tc = 25°C)
• Junction Temperature (Tj): 150°C
• Storage Temperature Range (Tstg): -55 to 150°C

• High-Frequency Performance: Transition frequency up to 3000 MHz.
• Compact and Durable: TO51 package for efficient space usage.
• Low Capacitance: 1.2 pF collector capacitance ensures minimal signal loss.

• Type: NPN Bipolar Junction Transistor (BJT)
• Collector-Emitter Voltage (Vceo): 80V
• Collector Current (Ic): 15A
• DC Current Gain (hFE): 80 - 320

• High power handling with 80A continuous drain current and 100V drain-to-source voltage.
• Low Rds On (15mΩ @ 40A, 10V) for minimal conduction losses.
• Wide gate drive voltage range with ±20V max Vgs.
• High efficiency due to low gate charge (182 nC @ 10V).

Specifications:

• Vr rm: 400V
• It (rms): 0.8A
• Pgm: 0.1W
• Vgrm: 5V
• Vgt: 0.8V
• Ih: 5mA
• Manufacturer: Motorola
• Model Number: MCR100-6

Package:

• 1x MCR100-6 MCR100-6G MCR100 0.8A 400V SCR Thyristor Transistor TO-92 Package

Discover the TOSHIBA TTC5200 TRANSISTOR, an NPN power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

• High Power Handling: Suitable for power-intensive applications
• Low-Frequency Performance: Optimized for low-frequency circuits
• Durable Silicon Material: Ensures stability and longevity
• Power Diode Capability: Functions efficiently as a power tube

• High Voltage Rating: Up to 300V
• Collector Current: Supports up to 1A
• Low Saturation Voltage: Improves efficiency
• Compact TO-92L Package: Ideal for space-constrained applications

• High Power NPN Transistor – Suitable for low-frequency applications
• Single Transistor Configuration – Easy to integrate into circuits
• Compact SOT-32-3 Package – Space-efficient and reliable
• Surface-Mount Technology (SMT/SMD) – Ensures secure placement on PCBs

• High voltage NPN transistor with 160V rating
• Maximum collector current of 1A
• Power dissipation up to 900mW
• Compact TO-92 package for versatile use

The LM336 Voltage Reference Diode is essential for precision voltage regulation in various electronic applications. It ensures stable and reliable performance. Key features include:

• Adjustable voltage reference
• High accuracy and stability
• Low temperature coefficient
• Ideal for analog and digital circuits

The MJE3055 and MJE2955 Power Transistors are designed for general-purpose switching and amplifier applications. These transistors ensure reliable performance and are ideal for various industrial and electronic projects in Bangladesh.

Key Features:

• DC current gain specified to 10 amperes
• High current gain with f_T = 2.0 MHz (Min) at I_C = 500 mAdc
• Durable and reliable construction
• Suitable for various switching and amplification tasks
• Easy to install and use in different circuits

The 2SA1943 PNP Epitaxial Silicon Transistor delivers outstanding performance for high-power applications. This high-reliability transistor is capable of handling high currents and voltages, making it ideal for demanding electronic circuits.

Key Features:

• Collector-Base Voltage (VCBO): 230V
• Collector-Emitter Voltage (VCEO): 230V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 15A
• Base Current (IB): 1.5A
• Collector Power Dissipation (PC): 150W (Tc = 25°C)
• Junction Temperature (Tj): 150°C
• Operating Temperature: -55°C to +150°C

Pack includes: 1x 2SA1943 PNP Epitaxial Silicon Transistor

MJ15024G - Bipolar (BJT) Single Transistor, Audio, NPN

The MJ15024G is a high-performance Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners, and other linear applications. With a high DC current gain and a broad safe operating area, it ensures reliable performance.

• High DC current gain
• High safe operating area
• Collector-base voltage (Vcbo = 400V)
• Emitter-base voltage (Vebo = 5V)

• Bi-Polar PNP Amplifier Transistor
• DC Current Gain (hFE) is 800 maximum
• Continuous Collector current (IC) is 100mA
• Peak Collector current (Ic) is 200mA