A1015 Bipolar Transistor – PNP Type

The A1015 is a reliable PNP bipolar transistor, ideal for audio frequency amplifier applications and switching purposes. Key features include:

• Type: PNP
• Collector-Emitter Voltage: -50V
• Collector-Base Voltage: -50V
• Emitter-Base Voltage: -5V
• Collector Current: -0.15A
• Collector Dissipation: 0.4W
• DC Current Gain (hFE): 70 to 400
• Transition Frequency: 80MHz
• Operating and Storage Junction Temperature Range: -55°C to +125°C
• Package: TO-92

Specifications:

• Dynamic resistance: 30mΩ
• I2t value for fusing: 98 A²S
• Maximum peak reverse gate voltage: 5V
• Peak gate current: 4A
• Operating temperature range: -40°C to +125°C
• Storage temperature: -40°C to +150°C

Package:

• 1x TYN612 IC TYN612M Thyristor 12A 600V Unidirectional SCR Thyristor TO-220 Silicon Control Rectifier Transistor

• High power handling with 80A continuous drain current and 100V drain-to-source voltage.
• Low Rds On (15mΩ @ 40A, 10V) for minimal conduction losses.
• Wide gate drive voltage range with ±20V max Vgs.
• High efficiency due to low gate charge (182 nC @ 10V).

• Ultra-soft with slight stickiness for easy handling.
• Good thermal conductivity for effective heat management.
• Feels like plasticine but has a degree of plasticity.
• Ideal for use with CPU, GPU, VGA cards, and IC components.

• High Power NPN Transistor – Suitable for low-frequency applications
• Single Transistor Configuration – Easy to integrate into circuits
• Compact SOT-32-3 Package – Space-efficient and reliable
• Surface-Mount Technology (SMT/SMD) – Ensures secure placement on PCBs

MJE15032G - Bipolar (BJT) Single Transistor

The MJE15032G is a high-performance NPN Bipolar Power Transistor designed for a variety of applications, including automotive. With high collector emitter voltage and power dissipation, it is ideal for demanding tasks.

• Transistor Polarity: NPN
• Collector Emitter Voltage (V_ceo): 250V
• Transition Frequency (f_t): 30MHz
• Power Dissipation (P_d): 50W
• DC Collector Current: 8A
• DC Current Gain (h_FE): 70
• Transistor Case Style: TO-220
• No. of Pins: 3
• Operating Temperature Max: 150°C
• Product Range: MJxxxx Series
• Automotive Qualification Standard

• PNP Transistor: Suitable for low to medium power amplification and switching circuits.
• High Current Handling: Supports up to 600mA of collector current.
• Wide Voltage Range: Maximum collector-emitter breakdown of 40V.
• DC Current Gain: Provides a minimum current gain of 100 at 150mA and 2V.

C1972 RF TO-220 Mitsubishi Transistor

The C1972 RF TO-220 Transistor from Mitsubishi is a high-performance NPN transistor designed for RF applications. It features a TO-220 package and is ideal for use in various electronic circuits.

• Manufacturer: Mitsubishi
• Type: NPN Transistor
• Package: TO-220
• Application: RF

Package Includes: 1x C1972 RF TO-220 Mitsubishi Transistor

• Bi-Polar PNP Amplifier Transistor
• DC Current Gain (hFE) is 800 maximum
• Continuous Collector current (IC) is 100mA
• Peak Collector current (Ic) is 200mA

Enhance your electronic projects with the Bangladesh MJE13003 NPN Power Transistor. This high-voltage, high-speed power transistor is perfect for applications requiring robust performance and reliability.

• Collector-Emitter Voltage (Vceo): 400V
• Collector Current (Ic): 4.0A
• hfe: 8-40 @ 2000mA
• Power Dissipation (Ptot): 75W
• Current-Gain-Bandwidth (ftotal): 4MHz
• Type: NPN

• High-Quality Original Japan Make: Authentic TOSHIBA C5198 transistor for reliable performance.
• High Power Handling: Designed for high-power audio amplification and switching.
• Low Distortion: Ensures clean and accurate signal output.

The BT134 600V 4A TRIAC is a high-performance bi-directional thyristor designed for efficient power control in various applications. With a reverse peak voltage of 600V and a rating forward current of 4A, it ensures reliable performance. This TRIAC is ideal for through hole mounting.

Key Features:

• Reverse Peak Voltage: 600V
• Rating Forward Current: 4A
• Static Surge Current: 40A
• Terminal Number: 3
• Terminal Pitch: 2mm (0.08")
• Terminal Size: 16 x 1mm (0.63" x 0.04")
• Total Length: 30mm (1.2")
• Body Dimensions: 11 x 7.5 x 2.5mm (0.43" x 0.3" x 0.1")

Package Content: 1x Triacs

The IRF540 N Channel MOSFET is an ideal choice for high-power switching applications. Capable of handling over 33A and 100V, this MOSFET comes in a TO-220 package, which fits perfectly into breadboards and perfboards. With a very low Rds(on) down to 44 milliohm and a low threshold voltage of less than 2.5V, it can be directly controlled by a microcontroller running on 5V logic. Heat sinking is simple with the TO-220 package, but thanks to the low Rds(on), you can often manage without additional heat sinking for high loads.

Key Features:

• Handles over 33A and 100V
• TO-220 package for easy integration
• Very low Rds(on) down to 44 milliohm
• Low threshold voltage (Vgs) of less than 2.5V
• Directly controllable from 5V logic microcontrollers

• Transistor Type: PNP
• Maximum Collector Current (Ic): 500 mA
• Maximum Collector-Emitter Breakdown Voltage: 300 V
• Maximum Collector Cutoff Current (ICBO): 100µA
• DC Current Gain (hFE) @ Ic, Vce: Minimum 30 @ 50mA, 10V

Enhance your electronic circuits with the Bangladesh C2073 NPN Power Transistor. This high-performance transistor is perfect for applications requiring reliable and efficient power dissipation and voltage regulation.

• Type Designator: 2SC2073
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector Power Dissipation: 25W
• Maximum Collector-Base Voltage: 150V
• Maximum Collector-Emitter Voltage: 150V
• Maximum Emitter-Base Voltage: 5V
• Maximum Collector Current: 1.5A
• Maximum Temperature: 150°C
• Transition Frequency: 1MHz
• Collector Capacitance: 70pF
• Forward Current Transfer Ratio (hFE): Min 40
• Package: TO220