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Specifications:
Package:
1x TIP126 Bipolar Transistor
Description:
The TIP126 is a high-power PNP transistor commonly used for switching and amplification tasks. It has a maximum collector-emitter voltage of -80V and a collector current of -5A, making it ideal for driving medium-power loads. With a DC current gain (hFE) of 1000, it is highly efficient for signal amplification and switching operations. The transistor is packaged in a TO-220 form factor, capable of dissipating up to 65W. It is suitable for a wide range of applications, including motor control, audio amplification, and power switching. With an operating temperature range of -65°C to +150°C, it ensures stable performance in extreme conditions.
FAQ:
1. What is the maximum voltage the TIP126 can handle across the collector and emitter?
2. What is the maximum current that the TIP126 can handle?
3. What type of transistor is the TIP126?
4. What is the typical application for the TIP126?
5. What is the temperature range for the TIP126?
MJ15025G PNP Transistor
The MJ15025G is a high-performance PNP Power Transistor from ON Semiconductor. Designed for a wide range of applications, it meets AEC-Q101 standards for automotive qualifications and is perfect for high power and high voltage tasks.
The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.
Key Features:
The 18N50 N-Channel Power MOSFET is designed for high-efficiency power switching applications. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 18A, it offers reliable performance. Ideal for various demanding electronic circuits.
Key Features:
The D880 NPN Power Transistor is designed for audio amplification and switching applications. Key features include:
Introducing the G15N60 RUFD G15N60 15A 600V IGBT, designed for high-performance applications. Key features include:
Get reliable power performance with our High-Performance 2SB337 Silicon PNP Power Transistors. Designed for various electronic applications, these transistors provide excellent efficiency and durability.
The Sil Pad Transistor Pad is made from high-quality silicone rubber, providing excellent thermal conductivity and electrical insulation. Key features include:
Package:
1x BFR91A Transistor
Specifications:
Package:
MJE340 NPN Power Transistor is ideal for high-voltage electronic circuits. Key features include:
