• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 55V
• Continuous Drain Current (Id): 110A
• Drain-Source Resistance (Rds On): 8mΩ

The BC547 is a versatile NPN transistor, widely used in electronic circuits for various applications. It features a TO-92 package and is known for its reliability and efficiency. Perfect for both amateur and professional use.

Key Features:

• Pinout Configuration:
  • Collector (C): Current flows in through the collector.
  • Base (B): Controls the biasing of the transistor.
  • Emitter (E): Current drains out through the emitter.
• DC Current Gain (h_FE): Max value of 800
• Continuous Collector Current (I_C): Up to 100mA
• Emitter-Base Voltage (V_BE): 6V
• Base Current (I_B): Max of 5mA

The 2N3904 is an NPN general purpose transistor designed for various electronic applications. With a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V, it offers reliable performance. This transistor is ideal for through hole mounting.

Key Features:

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole

• Compact TO92 package for easy circuit integration.
• Suitable for low-power amplification and switching applications.
• Handles up to 200mA collector current.
• High temperature resistance up to 125°C.

• Op-amp coupled with MOSFET at the output.
• Wide power supply range for flexibility.
• Single supply operation (5V to 16V) or dual supply operation (±2.5V to ±8V).
• High output voltage capability (maximum 13.3V).

• Bi-Polar PNP Amplifier Transistor
• DC Current Gain (hFE) is 800 maximum
• Continuous Collector current (IC) is 100mA
• Peak Collector current (Ic) is 200mA

• Type: NPN Silicon Transistor
• Maximum Collector Current (Ic): 500mA
• Maximum Voltage (Vce): 300V
• Saturation Voltage: 500mV @ 2mA, 20mA

The C1815 NPN General Purpose Transistor is a versatile component designed for various electronic applications. Key features include:

• Collector-Emitter Voltage (V_ceo): 50V
• Collector-Base Voltage (V_cbo): 60V
• Collector Current (I_c): 0.15A
• h_fe: 70-700 @ 2mA
• Power Dissipation (P_tot): 400mW
• Current-Gain-Bandwidth (f_total): 80MHz
• Type: NPN

The 2SC5242 Bipolar Transistor is a high-performance NPN transistor designed for a wide range of applications. With a collector-emitter voltage of 250V, collector current of 17A, and a dissipation of 130W, it offers robust performance and reliability. This transistor is housed in a TO-3P package, making it suitable for various electronic projects.

Key Features:

• Type: NPN
• Collector-Emitter Voltage: 250V
• Collector-Base Voltage: 250V
• Emitter-Base Voltage: 5V
• Collector Current: 17A
• Collector Dissipation: 130W
• DC Current Gain (hfe): 55 to 160
• Transition Frequency: 30 MHz
• Operating and Storage Temperature Range: -55 to +150°C
• Package: TO-3P

The BT136 4A 500V TRIAC is a versatile component designed for efficient power switching applications. With a maximum on-state current of 4A and a repetitive peak off-state voltage of 500V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220B package.

Key Features:

• Product Type: TRIAC SCR
• IC Number: BT136
• Number of Pins: 3
• Package Type: TO-220B

Package contains: 1 x BT136 IC

The NPN Transistor 25V 0.2A - BC109 offers reliable performance for various electronic applications. With a collector-emitter voltage of 25V and a transition frequency of 150MHz, it's ideal for general-purpose switching and amplification.

✔ Avalanche Rugged Technology – Ensures high durability and reliability
✔ Rugged Gate Oxide Technology – Provides better gate protection
✔ Lower Input Capacitance – Reduces switching losses for efficiency
✔ Improved Gate Charge – Enhances performance in high-frequency applications

C1971 RF/VHF/UHF TO-220 Mitsubishi Transistor

The C1971 RF/VHF/UHF TO-220 Transistor by Mitsubishi offers excellent performance for radio frequency applications across a wide frequency range, including VHF and UHF bands. Ideal for high-frequency electronic circuits.

• Manufacturer: Mitsubishi
• Type: NPN Transistor
• Package: TO-220
• Applications: RF, VHF, UHF

Package Includes: 1x C1971 RF/VHF/UHF TO-220 Mitsubishi Transistor

• NPN transistor with plastic casing for durability.
• Continuous collector current (IC) of 1.5A for high-power applications.
• High collector-emitter voltage (VCE) of 80V.
• Base current (Ib) of 0.5A for efficient switching.

• Type: NPN Bipolar Junction Transistor (BJT)
• Collector-Emitter Voltage (Vceo): 45V
• Collector-Base Voltage (Vcb): 50V
• Emitter-Base Voltage (Vbe): 6V

The 18N50 N-Channel Power MOSFET is designed for high-efficiency power switching applications. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 18A, it offers reliable performance. Ideal for various demanding electronic circuits.

Key Features:

• Drain to Source Voltage (Vdss): 500V
• Continuous Drain Current (Id): 18A
• High Efficiency and Performance
• N-Channel MOSFET