Availability:
10000 In Stock
- Miniature Size for easy installation
- Low Holding Current Distribution for flexible design
- High Peak Reverse Blocking Voltage of 500V
- Peak On-State Current of 2A
Sil Pad Transistor pad Silicone Rubber
- Write a review
Model: 1077
৳2.00
No tax
The Sil Pad Transistor Pad is made from high-quality silicone rubber, providing excellent thermal conductivity and electrical insulation. Key features include:
- High thermal conductivity for efficient heat dissipation.
- Electrical insulation to protect sensitive electronic components.
- Flexible and easy to apply.
- Available in various thicknesses and sizes.
Safe Shopping
Data Protection.
Fast Delivery
Delivery all over Bangladesh.
Guarantee safe & secure checkout
Product Details
The Sil Pad Transistor Pad is a thermally conductive insulator made from silicone rubber, designed to improve heat dissipation in electronic assemblies. It provides excellent thermal performance while electrically isolating components from heat sinks.
Use of the Product
This Sil Pad is ideal for use in electronic components such as ICs, transistors, and other heat-sensitive parts. It ensures efficient heat transfer away from the component to the heat sink, maintaining optimal operating temperatures.
Benefits of the Product
- High thermal conductivity for effective heat dissipation.
- Electrical insulation to prevent short circuits.
- Flexible and easy to apply, ensuring a secure fit.
- Available in various thicknesses and sizes to suit different applications.
Frequently Asked Questions
- What is the primary use of Sil Pad Transistor Pads? - They are used to transfer heat away from electronic components to heat sinks while providing electrical insulation.
- Are they easy to apply? - Yes, they are flexible and easy to apply, ensuring a secure fit.
- Do they come in different sizes? - Yes, they are available in various thicknesses and sizes to suit different applications.
Tips for Use
- Ensure proper alignment and fit for optimal thermal performance.
- Handle with care to avoid damage during installation.
- Store in a cool, dry place to maintain material properties.
Sil Pad Transistor pad Silicone Rubber ElectronicsBD Bangladesh (BD)
In Bangladesh, you can get the best Quality and original Sil Pad Transistor pad Silicone Rubber from ElectronicsBD. We have a large collection of the latest Sil Pad Transistor pad Silicone Rubber to purchase. Order online or visit our shop ElectronicsBD to get yours at the lowest price.What is the latest and best price of Sil Pad Transistor pad Silicone Rubber in Bangladesh (BD) ?
The latest and special price of Sil Pad Transistor pad Silicone Rubber in Bangladesh is BDT 2 Taka. Buy best quality Sil Pad Transistor pad Silicone Rubber from ElectronicsBD at a special price in Bangladesh (BD). You can buy Sil Pad Transistor pad Silicone Rubber at best price from ElectronicsBD or visit ElectronicsBD Store. বাংলাদেশে আকর্ষণীয় মূল্যে কিনুন Sil Pad Transistor pad Silicone Rubber শুধুমাত্র ইলেকট্রনিক্স বিডি ElectronicsBD থেকে। ElectronicsBD বাংলাদেশের সকল প্রধান স্থান যেমন বরিশাল, চট্টগ্রাম, ঢাকা, খুলনা, রাজশাহী, রংপুর, ময়মনসিংহ, সিলেটে সহ সকল স্থানে পণ্য ডেলিভারি করে ।
1077
16 other products in the same category:
Availability:
10000 In Stock
The Toshiba A1962 Transistor is a high-performance component designed for various electronic applications. It offers reliable performance and efficiency for your projects. Key features include:
- High current capacity
- Low saturation voltage
- Compact and durable design
- Ideal for power amplification and switching
Availability:
10000 In Stock
Discover the TOSHIBA TTA1943 TRANSISTOR, a PNP power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.
Availability:
10000 In Stock
The 2N7000 MOSFET Transistor from Fairchild Semiconductor is a highly efficient component suitable for a variety of electronic applications. It features a maximum continuous drain current of 200mA and a maximum drain source voltage of 60V.
Key Features:
- Maximum Continuous Drain Current: 200mA
- Maximum Drain Source Voltage: 60V
- Maximum Drain Source Resistance: 5Ω
- Gate Threshold Voltage (VGS): Min = 0.8V, Max = 3V
- Maximum Power Dissipation: 400mW
Availability:
10000 In Stock
Enhance your electronic circuits with the Bangladesh C2073 NPN Power Transistor. This high-performance transistor is perfect for applications requiring reliable and efficient power dissipation and voltage regulation.
- Type Designator: 2SC2073
- Material: Silicon (Si)
- Polarity: NPN
- Maximum Collector Power Dissipation: 25W
- Maximum Collector-Base Voltage: 150V
- Maximum Collector-Emitter Voltage: 150V
- Maximum Emitter-Base Voltage: 5V
- Maximum Collector Current: 1.5A
- Maximum Temperature: 150°C
- Transition Frequency: 1MHz
- Collector Capacitance: 70pF
- Forward Current Transfer Ratio (hFE): Min 40
- Package: TO220
Availability:
10000 In Stock
- Type: PNP Bipolar Small Signal Transistor
- Collector-Base Voltage (Vcb): 40V
- Collector-Emitter Voltage (Vce): 40V
- Emitter-Base Voltage (Veb): 5V
Availability:
10000 In Stock
The BTA26-600 24A 600V TRIAC is a high-performance component designed for efficient power switching applications. With a gate turn-on voltage of 1.3V and a peak off-state voltage of 600V, it ensures reliable performance in demanding environments. This TRIAC is perfect for through hole mounting.
Key Features:
- Gate Turn-On Voltage (Vgt): 1.3V
- Peak Off-State Voltage (Vdrm): 600V
- On-State Current (It): 25.0A
- Gate Current (Igt): 35mA
- Average Gate Power Dissipation (Pg): 1W
- Typical Voltage Change Over Time (dV/dT): 500V/µs
Availability:
10000 In Stock
- PNP transistor with high current capacity
- Designed for switching and amplification in power applications
- High collector-to-emitter voltage
- Capable of handling pulse currents up to 13A
Availability:
10000 In Stock
- Bi-Polar PNP Transistor
- DC Current Gain (hFE): Maximum 300
- Continuous Collector Current (IC): 100mA
Availability:
10000 In Stock
- Type: NPN Silicon Transistor
- Maximum Collector Current (Ic): 500mA
- Maximum Voltage (Vce): 300V
- Saturation Voltage: 500mV @ 2mA, 20mA
Availability:
10000 In Stock
The BT136 4A 500V TRIAC is a versatile component designed for efficient power switching applications. With a maximum on-state current of 4A and a repetitive peak off-state voltage of 500V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220B package.
Key Features:
- Product Type: TRIAC SCR
- IC Number: BT136
- Number of Pins: 3
- Package Type: TO-220B
Package contains: 1 x BT136 IC
Availability:
10000 In Stock
FGA15N120 IGBT - High Performance, Low Saturation Voltage
The FGA15N120 IGBT is an advanced NPT trench technology device with superior conduction and switching performances. This product is designed for applications requiring high avalanche ruggedness and easy parallel operation, such as induction heating and microwave ovens.
- NPT Trench Technology, Positive Temperature Coefficient
- Low Saturation Voltage: VCE(sat), typ = 1.9V
- IC = 15A and TC = 25°C
- Low Switching Loss: Eoff, typ = 0.6mJ
- Extremely Enhanced Avalanche Capability
- TO-3P Package
Availability:
10000 In Stock
- NPN Transistor: Ideal for low to medium power amplification.
- High Current Handling: Capable of handling up to 500mA of collector current.
- Wide Voltage Range: Operates within a collector-emitter voltage of up to 40V.
- High Gain: Offers a current gain range of 20 – 300.
Availability:
10000 In Stock
G15N60 RUFD G15N60 15A 600V IGBT
Introducing the G15N60 RUFD G15N60 15A 600V IGBT, designed for high-performance applications. Key features include:
- 75% lower Eoff compared to previous generation
- Low conduction losses
- Short circuit withstand time: 10 µs
- Designed for motor controls and inverters
- NPT-Technology for 600V applications offers:
- Very tight parameter distribution
- High ruggedness and temperature stable behavior
- Parallel switching capability
Availability:
10000 In Stock
MJE340 NPN Power Transistor is ideal for high-voltage electronic circuits. Key features include:
- Type: n-p-n
- Collector-Emitter Voltage: 300 V
- Collector-Base Voltage: 300 V
- Emitter-Base Voltage: 5 V
- Collector Current: 0.5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 30 to 240
- Operating Temperature Range: -65 to +150 °C
- Package: TO-126
Availability:
10000 In Stock
Discover the 2N2222 NPN Transistor, ideal for general-purpose low-power amplifying or switching applications. With a maximum collector current of 600mA and a high transition frequency of 300 MHz, it's perfect for various electronic projects.