• High Voltage & Current Handling: 200V Drain-Source voltage and 30A continuous drain current.
• Low Rds On for efficient power switching.
• 180W Maximum Power Dissipation, ensuring stable performance under load.
• Gate-Source Voltage up to 20V for flexible control.

The 2N3055 NPN Power Transistor is a robust component designed for high-power applications. With a maximum collector current of 15A and a collector-emitter breakdown voltage of 60V, it ensures reliable performance. This transistor is ideal for chassis mounting and comes in a TO-3 package.

Key Features:

• Part NO.: 2N3055
• Package: TO-3
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
• Current - Collector Cutoff (Max): 700µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
• Power - Max: 115W
• Mounting Type: Chassis Mount
• Supplier Device Package: TO-3

Supplier: SICSTOCK

The BTA41 40A 600V TRIAC is a robust component designed for high-power switching applications. With a rated average on-state current of 40A and a repetitive peak reverse voltage of 600V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TOP3 package.

Key Features:

• Rated Average On-State Current: 40A
• Mounting Type: Through Hole
• Package Type: TOP3
• Maximum Gate Trigger Current: 100mA
• Repetitive Peak Reverse Voltage: 600V
• Surge Current Rating: 420A
• Pin Count: 3
• Maximum Gate Trigger Voltage: 1.3V
• Repetitive Peak Forward Blocking Voltage: 600V
• Maximum Holding Current: 80mA
• Repetitive Peak Off-State Current: 0.005mA
• Maximum Operating Temperature: +125°C
• Minimum Operating Temperature: -40°C
• Peak On-State Voltage: 1.55V

Package includes: 1x BTA41-600B

• Op-amp coupled with MOSFET at the output.
• Wide power supply range for flexibility.
• Single supply operation (5V to 16V) or dual supply operation (±2.5V to ±8V).
• High output voltage capability (maximum 13.3V).

D400 NPN Silicon Transistor

The D400 NPN Silicon Transistor is a reliable and efficient transistor designed for a wide range of electronic applications. Featuring low power consumption and high performance, this transistor is perfect for enhancing the functionality of your electronic circuits. Key features include:

• Type: NPN Silicon Transistor
• Model: D400
• High performance and reliability
• Low power consumption
• Ideal for various electronic applications

• Advanced HEXFET® Technology for high efficiency.
• Ultra-low on-resistance (Rds On) for minimal power loss.
• Fast switching speed, ideal for high-frequency applications.
• Dynamic dv/dt rating for improved performance.

The C1815 NPN General Purpose Transistor is a versatile component designed for various electronic applications. Key features include:

• Collector-Emitter Voltage (V_ceo): 50V
• Collector-Base Voltage (V_cbo): 60V
• Collector Current (I_c): 0.15A
• h_fe: 70-700 @ 2mA
• Power Dissipation (P_tot): 400mW
• Current-Gain-Bandwidth (f_total): 80MHz
• Type: NPN

The D2499 Silicon Diffused Power Transistor is designed for high-performance applications. Key features include:

• Collector-Emitter Voltage (V_ce): 600V
• Collector-Base Voltage (V_cb): 1500V
• Emitter-Base Voltage (V_eb): 5V
• Collector Current (I_c): 6A
• Power Dissipation (P_tot): 50W
• DC Current Gain (h_FE): 8 to 25
• Transition Frequency (f_t): 2MHz
• Package: TO-3PF

The TP 34N20 IGBT is a high-performance insulated-gate bipolar transistor designed for efficient power switching applications. With a voltage rating of 200V and a continuous current of 34A, it ensures reliable performance. The TO-220 package makes it easy to integrate into various circuit designs.

Key Features:

• Drain to Source Voltage (Vdss): 200V
• Continuous Drain Current (Id): 34A
• Power Dissipation: 136W
• Package: TO-220

• Miniature Size for easy installation
• Low Holding Current Distribution for flexible design
• High Peak Reverse Blocking Voltage of 500V
• Peak On-State Current of 2A

• High Current Handling: Supports a continuous drain current of 49A at 25°C.
• High Voltage Tolerance: Maximum Drain-Source Voltage (VDS) of 55V.
• Fast Switching Speed:
  • Rise time: 60ns
  • Fall time: 45ns

The IRF840 N-Channel MOSFET is a high-performance power MOSFET designed for efficient switching applications. With a high voltage rating and robust current handling capabilities, it is ideal for various power control circuits.

Key Features:

• Drain-Source Voltage (Vds): 500V
• Drain-Gate Voltage (Vdg): 500V
• Gate-Source Voltage (Vgs): 20V
• Drain Current (Id): 8.0A
• Power Dissipation (Ptot): 125W
• Type: N-Channel

Discover the TOSHIBA TTA1943 TRANSISTOR, a PNP power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

MJE340 NPN Power Transistor is ideal for high-voltage electronic circuits. Key features include:

• Type: n-p-n
• Collector-Emitter Voltage: 300 V
• Collector-Base Voltage: 300 V
• Emitter-Base Voltage: 5 V
• Collector Current: 0.5 A
• Collector Dissipation: 20 W
• DC Current Gain (hfe): 30 to 240
• Operating Temperature Range: -65 to +150 °C
• Package: TO-126

• Programmable Zener diode
• Output voltage range: 2.5V to 36V
• Output current range: 1mA to 100mA (sink current)
• Output voltage tolerance: ±4%

Enhance your electronic projects with the Bangladesh MJE13003 NPN Power Transistor. This high-voltage, high-speed power transistor is perfect for applications requiring robust performance and reliability.

• Collector-Emitter Voltage (Vceo): 400V
• Collector Current (Ic): 4.0A
• hfe: 8-40 @ 2000mA
• Power Dissipation (Ptot): 75W
• Current-Gain-Bandwidth (ftotal): 4MHz
• Type: NPN

• High Voltage & Current Handling: 200V Drain-Source voltage and 30A continuous drain current.
• Low Rds On for efficient power switching.
• 180W Maximum Power Dissipation, ensuring stable performance under load.
• Gate-Source Voltage up to 20V for flexible control.

The 2N3055 NPN Power Transistor is a robust component designed for high-power applications. With a maximum collector current of 15A and a collector-emitter breakdown voltage of 60V, it ensures reliable performance. This transistor is ideal for chassis mounting and comes in a TO-3 package.

Key Features:

• Part NO.: 2N3055
• Package: TO-3
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
• Current - Collector Cutoff (Max): 700µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
• Power - Max: 115W
• Mounting Type: Chassis Mount
• Supplier Device Package: TO-3

Supplier: SICSTOCK

The BTA41 40A 600V TRIAC is a robust component designed for high-power switching applications. With a rated average on-state current of 40A and a repetitive peak reverse voltage of 600V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TOP3 package.

Key Features:

• Rated Average On-State Current: 40A
• Mounting Type: Through Hole
• Package Type: TOP3
• Maximum Gate Trigger Current: 100mA
• Repetitive Peak Reverse Voltage: 600V
• Surge Current Rating: 420A
• Pin Count: 3
• Maximum Gate Trigger Voltage: 1.3V
• Repetitive Peak Forward Blocking Voltage: 600V
• Maximum Holding Current: 80mA
• Repetitive Peak Off-State Current: 0.005mA
• Maximum Operating Temperature: +125°C
• Minimum Operating Temperature: -40°C
• Peak On-State Voltage: 1.55V

Package includes: 1x BTA41-600B

• Op-amp coupled with MOSFET at the output.
• Wide power supply range for flexibility.
• Single supply operation (5V to 16V) or dual supply operation (±2.5V to ±8V).
• High output voltage capability (maximum 13.3V).

D400 NPN Silicon Transistor

The D400 NPN Silicon Transistor is a reliable and efficient transistor designed for a wide range of electronic applications. Featuring low power consumption and high performance, this transistor is perfect for enhancing the functionality of your electronic circuits. Key features include:

• Type: NPN Silicon Transistor
• Model: D400
• High performance and reliability
• Low power consumption
• Ideal for various electronic applications