Discover the MJL4302 High Watt Transistor, a high-performance PNP bipolar junction transistor from ON Semiconductor. With a power dissipation of 230W, it is perfect for demanding electronic applications. This transistor is RoHS compliant and features a through-hole mounting style for easy integration into your projects.

Key Features:

• Category: Bipolar Transistors - BJT
• Collector-Emitter Voltage (VCEO Max): 350V
• Collector-Base Voltage (VCBO): 350V
• Emitter-Base Voltage (VEBO): 5V
• Maximum DC Collector Current: 15A
• Gain Bandwidth Product (fT): 35 MHz
• Maximum Operating Temperature: +150°C
• Package/Case: TO-264-3
• Mounting Style: Through Hole
• RoHS compliant

Introducing the BU807 NPN Transistor, a high-efficiency silicon transistor ideal for various electronic applications. It features a maximum collector-emitter voltage of 150V and a high current capacity of 8A, making it suitable for demanding tasks. Key features include:

• Transistor Polarity: NPN
• Collector-Emitter Voltage (Vceo): 150V
• Minimum Base Current (Ib): 2A
• Maximum Collector Current (Ic): 8A
• Total Dissipation at Tc≤25°C: 60W
• Package / Case: TO220

The 2N7000 MOSFET Transistor from Fairchild Semiconductor is a highly efficient component suitable for a variety of electronic applications. It features a maximum continuous drain current of 200mA and a maximum drain source voltage of 60V.

Key Features:

• Maximum Continuous Drain Current: 200mA
• Maximum Drain Source Voltage: 60V
• Maximum Drain Source Resistance: 5Ω
• Gate Threshold Voltage (VGS): Min = 0.8V, Max = 3V
• Maximum Power Dissipation: 400mW

The 2SC4793 NPN transistor is designed for high voltage and high frequency applications. With a maximum collector power dissipation of 20W, this silicon transistor provides excellent performance in various electronic circuits. Key features include:

• Type Designator: 2SC4793
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector-Base Voltage: 230V
• Maximum Collector-Emitter Voltage: 230V
• Maximum Emitter-Base Voltage: 5V
• Maximum Collector Current: 1A
• Maximum Temperature: 150°C
• Transition Frequency: 100MHz
• Collector Capacitance: 20pF
• Minimum Forward Current Transfer Ratio: 100

• High Voltage & Current Handling: 200V Drain-Source voltage and 30A continuous drain current.
• Low Rds On for efficient power switching.
• 180W Maximum Power Dissipation, ensuring stable performance under load.
• Gate-Source Voltage up to 20V for flexible control.

The BTA16-600V 16A TRIAC is a high-performance component designed for efficient power switching applications. With a non-repetitive state current of 168A and a repetitive off-state voltage of 600V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220-3 package.

Key Features:

• Non-Repetitive State Current: 168A
• Rated Repetitive Off-State Voltage VDRM: 600V
• Off-State Leakage Current @ VDRM IDRM: 5μA
• On-State Voltage: 1.55V
• Holding Current Ih Max: 50mA
• Gate Trigger Voltage - Vgt: 1.3V
• Gate Trigger Current - Igt: 50mA
• Maximum Operating Temperature: +125°C
• Minimum Operating Temperature: -40°C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Packaging: Tube

Series: BTA16-600B

• High current capacity for power applications
• Designed for switching and amplification
• Low saturation voltage
• Robust construction for reliable performance

2SA1494 Transistors - Bipolar (BJT) - Single

The 2SA1494 is a high-performance PNP Bipolar Power Transistor designed for a variety of applications, including audio and general-purpose use. It offers high collector current and power dissipation, making it an excellent choice for demanding tasks.

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 17A
• Collector Emitter Voltage (V_ceo): 200V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
• Collector Cutoff Current (Max): 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8A, 4V
• Power Dissipation (P_d): 200W
• Transition Frequency (f_t): 20MHz
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: MT-200

• High voltage NPN transistor with 160V rating
• Maximum collector current of 1A
• Power dissipation up to 900mW
• Compact TO-92 package for versatile use

The TP 34N20 IGBT is a high-performance insulated-gate bipolar transistor designed for efficient power switching applications. With a voltage rating of 200V and a continuous current of 34A, it ensures reliable performance. The TO-220 package makes it easy to integrate into various circuit designs.

Key Features:

• Drain to Source Voltage (Vdss): 200V
• Continuous Drain Current (Id): 34A
• Power Dissipation: 136W
• Package: TO-220

C3355 NPN RF Transistor

The C3355 is a high-performance NPN RF transistor, designed for various radio frequency applications. Key features include:

• Type Designator: 2SC3355
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 0.6W
• Maximum Collector-Base Voltage (Vcb): 20V
• Maximum Collector Current (Ic max): 0.1A
• Maximum Operating Junction Temperature (Tj): 125°C
• Transition Frequency (ft): 6500MHz
• Forward Current Transfer Ratio (hFE), MIN: 35
• Package: TO-92

The 2SC5200 NPN Epitaxial Silicon Transistor offers reliable performance for your high-power amplifier needs. This robust transistor is designed to handle high currents and voltages with ease, ensuring consistent performance in various applications.

Key Features:

• Collector-Base Voltage (VCBO): 230V
• Collector-Emitter Voltage (VCEO): 230V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 15A
• Base Current (IB): 1.5A
• Collector Power Dissipation (PC): 150W (Tc = 25°C)
• Junction Temperature (Tj): 150°C
• Storage Temperature Range (Tstg): -55 to 150°C

• High Power Handling: Suitable for power-intensive applications
• Low-Frequency Performance: Optimized for low-frequency circuits
• Durable Silicon Material: Ensures stability and longevity
• Power Diode Capability: Functions efficiently as a power tube

• High Voltage Rating: Up to 300V
• Collector Current: Supports up to 1A
• Low Saturation Voltage: Improves efficiency
• Compact TO-92L Package: Ideal for space-constrained applications

• Medium power transistor with hfe gain up to 50
• Improved linearity of hfe gain
• Maximum voltage across collector and emitter: 100V
• Maximum current allowed through collector: 3A DC

• N-Channel MOSFET for high-power switching applications
• Capable of handling up to 200 V and 31A at 25°C
• Low Rds On for better efficiency: 75mOhm @ 15.5A, 10V
• High power dissipation capacity of 180W (Tc)