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Description:
The MJE350G Bipolar PNP Transistor is designed for high-power applications, capable of handling up to 500 mA of collector current with a maximum voltage rating of 300 V. It features a DC current gain (hFE) of 30 at 50mA and 10V, making it suitable for amplification tasks in a variety of electronic circuits. The TO-126 package ensures ease of mounting, and the wide operating temperature range from -65°C to 150°C offers durability in different environments. It is commonly used in power amplification, switching applications, and in circuit designs requiring a high-performance PNP transistor.
FAQ:
Q: What is the maximum current that the MJE350G can handle?
A: The MJE350G can handle a maximum collector current of 500 mA.
Q: What is the maximum voltage that the transistor can withstand?
A: The maximum collector-emitter breakdown voltage is 300 V.
Q: What is the current gain of the MJE350G?
A: The DC current gain (hFE) is 30 at 50mA and 10V.
Q: What is the power rating of the MJE350G transistor?
A: The maximum power rating is 20 W.
Q: In which type of applications can I use this transistor?
A: The MJE350G is suitable for high-power amplification and switching applications, often used in electronic circuits that require a high-performance PNP transistor.
Specifications:
Package:
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