C3355 NPN RF Transistor

The C3355 is a high-performance NPN RF transistor, designed for various radio frequency applications. Key features include:

• Type Designator: 2SC3355
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 0.6W
• Maximum Collector-Base Voltage (Vcb): 20V
• Maximum Collector Current (Ic max): 0.1A
• Maximum Operating Junction Temperature (Tj): 125°C
• Transition Frequency (ft): 6500MHz
• Forward Current Transfer Ratio (hFE), MIN: 35
• Package: TO-92

The BS170 N-Channel MOSFET Transistor is a Pb-free device designed for low voltage and current applications. It boasts low offset and error voltage, high saturation current capability, and fast switching (TON = 4ns). Easily driven without a buffer, this MOSFET transistor ensures rugged and reliable performance.

Key Features:

• Pb-Free device
• Low offset and error voltage
• Easily driven without buffer
• High density cell design to minimize ON-state resistance RDS(ON)
• Voltage controlled small signal switch
• Particularly suitable for low voltage, low current application
• High saturation current capability
• Rugged and Reliable
• Fast switching (TON = 4ns)

• High Current Handling: Supports a continuous drain current of 49A at 25°C.
• High Voltage Tolerance: Maximum Drain-Source Voltage (VDS) of 55V.
• Fast Switching Speed:
  • Rise time: 60ns
  • Fall time: 45ns

• NPN Transistor: Ideal for low to medium power amplification.
• High Current Handling: Capable of handling up to 500mA of collector current.
• Wide Voltage Range: Operates within a collector-emitter voltage of up to 40V.
• High Gain: Offers a current gain range of 20 – 300.

Discover the TOSHIBA TTA1943 TRANSISTOR, a PNP power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

The BT136 4A 500V TRIAC is a versatile component designed for efficient power switching applications. With a maximum on-state current of 4A and a repetitive peak off-state voltage of 500V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220B package.

Key Features:

• Product Type: TRIAC SCR
• IC Number: BT136
• Number of Pins: 3
• Package Type: TO-220B

Package contains: 1 x BT136 IC

• Type: NPN Silicon Transistor
• Maximum Collector Current (Ic): 500mA
• Maximum Voltage (Vce): 300V
• Saturation Voltage: 500mV @ 2mA, 20mA

The 18N50 N-Channel Power MOSFET is designed for high-efficiency power switching applications. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 18A, it offers reliable performance. Ideal for various demanding electronic circuits.

Key Features:

• Drain to Source Voltage (Vdss): 500V
• Continuous Drain Current (Id): 18A
• High Efficiency and Performance
• N-Channel MOSFET

• Pre-Amplifier: Low Level, Low Noise NPN Transistor
• Current Gain (hFE): 60 to 1000 (Good Linearity)
• Continuous Collector Current (IC): 100mA
• Collector-Emitter Voltage (VCEO): 45V

The TP 34N20 IGBT is a high-performance insulated-gate bipolar transistor designed for efficient power switching applications. With a voltage rating of 200V and a continuous current of 34A, it ensures reliable performance. The TO-220 package makes it easy to integrate into various circuit designs.

Key Features:

• Drain to Source Voltage (Vdss): 200V
• Continuous Drain Current (Id): 34A
• Power Dissipation: 136W
• Package: TO-220

• Op-amp coupled with MOSFET at the output.
• Wide power supply range for flexibility.
• Single supply operation (5V to 16V) or dual supply operation (±2.5V to ±8V).
• High output voltage capability (maximum 13.3V).

• Type: NPN Medium Power Transistor
• Application: Ideal for voltage regulation, relay driver, generic switch, audio power amplifier, and DC-DC converter applications
• Peak Collector Current: 6A
• Collector to Base Voltage: 60V

Introducing the BU806 NPN Transistor, a high-performance silicon transistor designed for a wide range of electronic applications. It boasts impressive specifications, including a maximum collector power dissipation of 60W and a maximum collector-emitter voltage of 200V. Key features include:

• Type Designator: BU806
• Material of Transistor: Si (Silicon)
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 60 W
• Maximum Collector-Base Voltage (Vcb): 400 V
• Maximum Collector-Emitter Voltage (Vce): 200 V
• Maximum Emitter-Base Voltage (Veb): 5 V
• Maximum Collector Current (Ic max): 8 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Forward Current Transfer Ratio (hFE), MIN: 100
• Package: TO220

• Bi-Polar PNP Transistor
• DC Current Gain (hFE): Maximum 300
• Continuous Collector Current (IC): 100mA

The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.

Key Features:

• Part NO.: FQA24N60
• Package: TO-3P
• FET Type: MOSFET N-Channel, Metal Oxide
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 23.5A
• Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) @ Vgs: 145nC @ 10V
• Input Capacitance (Ciss) @ Vds: 5500pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Supplier: SICSTOCK

• High Power Dissipation: Max 300 W
• High Drain-Source Voltage: 500 V
• Maximum Drain Current: 21 A
• Low On-State Resistance: 0.25 Ohm