Offer


MJE13003 NPN Power Transistor

Model: 2577

৳7.00
No tax

Enhance your electronic projects with the Bangladesh MJE13003 NPN Power Transistor. This high-voltage, high-speed power transistor is perfect for applications requiring robust performance and reliability.

  • Collector-Emitter Voltage (Vceo): 400V
  • Collector Current (Ic): 4.0A
  • hfe: 8-40 @ 2000mA
  • Power Dissipation (Ptot): 75W
  • Current-Gain-Bandwidth (ftotal): 4MHz
  • Type: NPN
Quantity
Add to wishlist
In Stock

  Safe Shopping

Data Protection.

  Fast Delivery

Delivery all over Bangladesh.

Guarantee safe & secure checkout

Product Details

The Bangladesh MJE13003 NPN Power Transistor is designed for high-voltage, high-speed power switching applications. With a collector-emitter voltage of 400V and a collector current of 4.0A, this transistor ensures reliable performance in demanding electronic circuits.

Use of the Product

This NPN power transistor is ideal for applications such as switching regulators, inverters, motor controls, solenoid/relay drivers, and deflection circuits. Its high power dissipation of 75W and current-gain-bandwidth of 4MHz make it a versatile choice for various electronic projects.

Benefits of the Product

  • High Voltage Tolerance: Handles up to 400V, making it suitable for high-voltage applications.
  • High Current Capacity: Supports a collector current of 4.0A, ensuring robust performance.
  • Wide Gain Range: Offers a hfe of 8-40 @ 2000mA, providing flexibility in circuit design.
  • Efficient Power Dissipation: Capable of dissipating up to 75W, ensuring efficient thermal management.
  • High Frequency Response: Features a current-gain-bandwidth of 4MHz, ideal for high-speed switching.

Frequently Asked Questions

  1. Q: What is the collector-emitter voltage rating of this transistor? A: The collector-emitter voltage (Vceo) is 400V.
  2. Q: What is the collector current rating? A: The collector current (Ic) is 4.0A.
  3. Q: What is the power dissipation of this transistor? A: The power dissipation (Ptot) is 75W.
  4. Q: What is the current-gain-bandwidth? A: The current-gain-bandwidth (ftotal) is 4MHz.

Tips for Use

  • Ensure proper heat sinking to manage power dissipation effectively.
  • Verify compatibility with your circuit requirements before installation.
  • Handle with care during soldering to avoid damaging the transistor.


MJE13003 NPN Power Transistor ElectronicsBD Bangladesh (BD)

In Bangladesh, you can get the best Quality and original MJE13003 NPN Power Transistor from ElectronicsBD. We have a large collection of the latest MJE13003 NPN Power Transistor to purchase. Order online or visit our shop ElectronicsBD to get yours at the lowest price.

What is the latest and best price of MJE13003 NPN Power Transistor in Bangladesh (BD) ?

The latest and special price of MJE13003 NPN Power Transistor in Bangladesh is BDT 7 Taka. Buy best quality MJE13003 NPN Power Transistor from ElectronicsBD at a special price in Bangladesh (BD). You can buy MJE13003 NPN Power Transistor at best price from ElectronicsBD or visit ElectronicsBD Store. বাংলাদেশে আকর্ষণীয় মূল্যে কিনুন MJE13003 NPN Power Transistor শুধুমাত্র ইলেকট্রনিক্স বিডি ElectronicsBD থেকে। ElectronicsBD বাংলাদেশের সকল প্রধান স্থান যেমন বরিশাল, চট্টগ্রাম, ঢাকা, খুলনা, রাজশাহী, রংপুর, ময়মনসিংহ, সিলেটে সহ সকল স্থানে পণ্য ডেলিভারি করে ।
2577

16 other products in the same category:

Availability: 10000 In Stock

The 10N60C N-Channel MOSFET is a high-efficiency power transistor designed for demanding applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A, it ensures reliable performance. This MOSFET features a TO-220F package for through hole mounting.

Key Features:

  • Part NO.: AOTF10N60
  • Package: TO-220F
  • FET Type: MOSFET N-Channel, Metal Oxide
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 1600pF @ 25V
  • Power - Max: 50W
  • Mounting Type: Through Hole
  • Supplier: SICSTOCK
Availability: 10000 In Stock
  • Low voltage, high current PNP transistor.
  • High current gain (hFE: 85 to 300).
  • Suitable for Class B push-pull transistor configurations.
  • Compact TO-92 package for easy integration.

16TTS12 Thyristors

৳267.00
Availability: 10000 In Stock

The 16TTS12 Thyristors are designed for high-performance applications, providing a robust and reliable solution for your electronic needs. These thyristors feature:

  • Average Current (IT(AV)): 10 A
  • Repetitive Peak Off-State Voltage (VDRM/VRRM): 800V, 1200V
  • On-State Voltage (VTM): 1.4 V
  • Gate Trigger Current (IGT): 60 mA
  • Operating Junction Temperature (TJ): -40°C to 125°C
  • Circuit Configuration: Single SCR

Perfect for use in circuits that require precise and reliable switching capabilities.

Availability: 10000 In Stock
  • High power handling with 80A continuous drain current and 100V drain-to-source voltage.
  • Low Rds On (15mΩ @ 40A, 10V) for minimal conduction losses.
  • Wide gate drive voltage range with ±20V max Vgs.
  • High efficiency due to low gate charge (182 nC @ 10V).
Availability: 10000 In Stock

G15N60 RUFD G15N60 15A 600V IGBT

Introducing the G15N60 RUFD G15N60 15A 600V IGBT, designed for high-performance applications. Key features include:

  • 75% lower Eoff compared to previous generation
  • Low conduction losses
  • Short circuit withstand time: 10 µs
  • Designed for motor controls and inverters
  • NPT-Technology for 600V applications offers:
    • Very tight parameter distribution
    • High ruggedness and temperature stable behavior
    • Parallel switching capability
Availability: 10000 In Stock

The 10N60 A CLASS High Quality IGBT Transistor is designed for efficient power control in various applications. Key features include:

  • Collector-Emitter Voltage (Vceo): 600V
  • Collector Current (Ic): 10A
  • Fast IGBT Technology
  • NPT TECH for enhanced performance
  • High Quality and reliability
Availability: 10000 In Stock

The BTA16-600V 16A TRIAC is a high-performance component designed for efficient power switching applications. With a non-repetitive state current of 168A and a repetitive off-state voltage of 600V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220-3 package.

Key Features:

  • Non-Repetitive State Current: 168A
  • Rated Repetitive Off-State Voltage VDRM: 600V
  • Off-State Leakage Current @ VDRM IDRM: 5μA
  • On-State Voltage: 1.55V
  • Holding Current Ih Max: 50mA
  • Gate Trigger Voltage - Vgt: 1.3V
  • Gate Trigger Current - Igt: 50mA
  • Maximum Operating Temperature: +125°C
  • Minimum Operating Temperature: -40°C
  • Mounting Style: Through Hole
  • Package / Case: TO-220-3
  • Packaging: Tube

Series: BTA16-600B

Availability: 10000 In Stock

The Radiolink AT9S Pro Remote Control is a versatile transmitter and receiver designed for RC models, including airplanes, helicopters, drones, and more. With 10/12 channels and long-range control, it ensures stable and reliable performance for all your RC adventures.

Key Features:

  • 10/12 Channels
  • Long-range control up to 2.1 miles (3.4km)
  • Supports multiple models (airplanes, helicopters, drones, cars, boats, etc.)
  • Real-time telemetry information
  • Signal strength indicator (RSSI) alerts
  • Low voltage alarm
  • Fail-safe protection
  • 2.8-inch LCD screen with DD sounds and vibration alerts
Availability: 10000 In Stock

The LM336 Voltage Reference Diode is essential for precision voltage regulation in various electronic applications. It ensures stable and reliable performance. Key features include:

  • Adjustable voltage reference
  • High accuracy and stability
  • Low temperature coefficient
  • Ideal for analog and digital circuits
Availability: 10000 In Stock

The MJE3055 and MJE2955 Power Transistors are designed for general-purpose switching and amplifier applications. These transistors ensure reliable performance and are ideal for various industrial and electronic projects in Bangladesh.

Key Features:

  • DC current gain specified to 10 amperes
  • High current gain with fT = 2.0 MHz (Min) at IC = 500 mAdc
  • Durable and reliable construction
  • Suitable for various switching and amplification tasks
  • Easy to install and use in different circuits