• Type: NPN Bipolar Junction Transistor (BJT)
• Low Noise Figure: Suitable for RF and audio applications
• Compact TO-92 Package: Easy to mount and use in various circuits

The Radiolink AT9S Pro Remote Control is a versatile transmitter and receiver designed for RC models, including airplanes, helicopters, drones, and more. With 10/12 channels and long-range control, it ensures stable and reliable performance for all your RC adventures.

Key Features:

• 10/12 Channels
• Long-range control up to 2.1 miles (3.4km)
• Supports multiple models (airplanes, helicopters, drones, cars, boats, etc.)
• Real-time telemetry information
• Signal strength indicator (RSSI) alerts
• Low voltage alarm
• Fail-safe protection
• 2.8-inch LCD screen with DD sounds and vibration alerts

Specifications:

• Type: NPN Silicon High-Frequency Transistor
• Collector-Emitter Voltage (Vce): 15V
• Collector-Base Voltage (Vcb): 15V
• Emitter-Base Voltage (Veb): 2V
• Collector Current (Ic): 25mA
• Power Dissipation (Ptot): 300mW
• Transition Frequency (ft): 5GHz
• Package Type: TO-50
• Operating Temperature Range: -65°C to +150°C

Package:

1x BFR91A Transistor

• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 55V
• Continuous Drain Current (Id): 110A
• Drain-Source Resistance (Rds On): 8mΩ

Discover the 2N2222 NPN Transistor, ideal for general-purpose low-power amplifying or switching applications. With a maximum collector current of 600mA and a high transition frequency of 300 MHz, it's perfect for various electronic projects.

The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.

Key Features:

• Part NO.: FQA24N60
• Package: TO-3P
• FET Type: MOSFET N-Channel, Metal Oxide
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 23.5A
• Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) @ Vgs: 145nC @ 10V
• Input Capacitance (Ciss) @ Vds: 5500pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Supplier: SICSTOCK

The IRF540 N Channel MOSFET is an ideal choice for high-power switching applications. Capable of handling over 33A and 100V, this MOSFET comes in a TO-220 package, which fits perfectly into breadboards and perfboards. With a very low Rds(on) down to 44 milliohm and a low threshold voltage of less than 2.5V, it can be directly controlled by a microcontroller running on 5V logic. Heat sinking is simple with the TO-220 package, but thanks to the low Rds(on), you can often manage without additional heat sinking for high loads.

Key Features:

• Handles over 33A and 100V
• TO-220 package for easy integration
• Very low Rds(on) down to 44 milliohm
• Low threshold voltage (Vgs) of less than 2.5V
• Directly controllable from 5V logic microcontrollers

Explore the MJL4281 High Watt Transistor, a high-performance NPN bipolar junction transistor from ON Semiconductor. With a power dissipation of 230W, it is perfect for demanding electronic applications. This transistor is RoHS compliant and features a through-hole mounting style for easy integration into your projects.

Key Features:

• Category: Bipolar Transistors - BJT
• Collector-Emitter Voltage (VCEO Max): 350V
• Collector-Base Voltage (VCBO): 350V
• Emitter-Base Voltage (VEBO): 5V
• Maximum DC Collector Current: 15A
• Gain Bandwidth Product (fT): 35 MHz
• Maximum Operating Temperature: +150°C
• Package/Case: TO-264-3
• Mounting Style: Through Hole
• RoHS compliant

Discover the S8050 NPN Transistor, ideal for Class B push-pull audio amplifiers and general-purpose applications in Bangladesh. It offers a collector current of up to 700mA and a collector-emitter voltage of up to 20V, making it suitable for a variety of electronic projects.

• PNP Transistor: Suitable for low to medium power amplification and switching circuits.
• High Current Handling: Supports up to 600mA of collector current.
• Wide Voltage Range: Maximum collector-emitter breakdown of 40V.
• DC Current Gain: Provides a minimum current gain of 100 at 150mA and 2V.

The C106D Thyristor is a high-performance component designed for efficient power switching applications. With a nominal current of 4A and a reverse voltage rating (URRM) of 600V, this thyristor ensures reliable performance. Perfect for through hole mounting with a TO-225AA package.

Key Features:

• Nominal Current: 4A
• Reverse Voltage Rating (URRM): 600V
• Mounting Form: TO-225AA

BC548 NPN General Purpose Transistor

The BC548 is a versatile NPN general-purpose transistor, ideal for a wide range of applications such as relay drivers, LED drivers, and amplifier modules. Key features include:

• Bi-Polar NPN Transistor
• DC Current Gain (hFE) up to 800
• Continuous Collector current (IC) of 500mA
• Emitter Base Voltage (VBE) of 5V
• Base Current (IB) up to 5mA
• Available in TO-92 package

The BT134 600V 4A TRIAC is a high-performance bi-directional thyristor designed for efficient power control in various applications. With a reverse peak voltage of 600V and a rating forward current of 4A, it ensures reliable performance. This TRIAC is ideal for through hole mounting.

Key Features:

• Reverse Peak Voltage: 600V
• Rating Forward Current: 4A
• Static Surge Current: 40A
• Terminal Number: 3
• Terminal Pitch: 2mm (0.08")
• Terminal Size: 16 x 1mm (0.63" x 0.04")
• Total Length: 30mm (1.2")
• Body Dimensions: 11 x 7.5 x 2.5mm (0.43" x 0.3" x 0.1")

Package Content: 1x Triacs

D400 NPN Silicon Transistor

The D400 NPN Silicon Transistor is a reliable and efficient transistor designed for a wide range of electronic applications. Featuring low power consumption and high performance, this transistor is perfect for enhancing the functionality of your electronic circuits. Key features include:

• Type: NPN Silicon Transistor
• Model: D400
• High performance and reliability
• Low power consumption
• Ideal for various electronic applications

The BS170 N-Channel MOSFET Transistor is a Pb-free device designed for low voltage and current applications. It boasts low offset and error voltage, high saturation current capability, and fast switching (TON = 4ns). Easily driven without a buffer, this MOSFET transistor ensures rugged and reliable performance.

Key Features:

• Pb-Free device
• Low offset and error voltage
• Easily driven without buffer
• High density cell design to minimize ON-state resistance RDS(ON)
• Voltage controlled small signal switch
• Particularly suitable for low voltage, low current application
• High saturation current capability
• Rugged and Reliable
• Fast switching (TON = 4ns)

• High Power Handling: Suitable for power-intensive applications
• Low-Frequency Performance: Optimized for low-frequency circuits
• Durable Silicon Material: Ensures stability and longevity
• Power Diode Capability: Functions efficiently as a power tube