Offer


MCR100-6 MCR100-6G MCR100 0.8A 400V SCR Thyristor Transistor

Model: 3158

৳14.00
No tax

Specifications:

  • Vr rm: 400V
  • It (rms): 0.8A
  • Pgm: 0.1W
  • Vgrm: 5V
  • Vgt: 0.8V
  • Ih: 5mA
  • Manufacturer: Motorola
  • Model Number: MCR100-6

Package:

  • 1x MCR100-6 MCR100-6G MCR100 0.8A 400V SCR Thyristor Transistor TO-92 Package
Quantity
Add to wishlist
In Stock

  Safe Shopping

Data Protection.

  Fast Delivery

Delivery all over Bangladesh.

Guarantee safe & secure checkout

Features:

  • High voltage handling up to 400V.
  • Steady current capacity of 0.8A.
  • Sensitive gate trigger voltage at 0.8V.
  • Compact and lightweight TO-92 package.
  • Manufactured by Motorola for reliable performance.

Description:
The MCR100-6 SCR Thyristor Transistor is designed for efficient and precise switching applications. With a voltage capacity of 400V and a current rating of 0.8A, it’s perfect for low-power control circuits. Its TO-92 package makes it compact and easy to integrate into various electronic projects. Manufactured by Motorola, it ensures reliable performance and long-lasting durability.


FAQ:

Q1: What is the maximum voltage this SCR can handle?
A1: It can handle up to 400V.

Q2: What is the current rating of this transistor?
A2: The RMS current rating is 0.8A.

Q3: Is this suitable for low-power control circuits?
A3: Yes, with a gate trigger voltage of 0.8V and a power rating of 0.1W, it’s ideal for low-power applications.

Q4: What type of package does this transistor come in?
A4: It comes in a TO-92 package, which is compact and easy to mount.

Q5: Who manufactures this component?
A5: This SCR is manufactured by Motorola, known for high-quality electronic components.



MCR100-6 MCR100-6G MCR100 0.8A 400V SCR Thyristor Transistor ElectronicsBD Bangladesh (BD)

In Bangladesh, you can get the best Quality and original MCR100-6 MCR100-6G MCR100 0.8A 400V SCR Thyristor Transistor from ElectronicsBD. We have a large collection of the latest MCR100-6 MCR100-6G MCR100 0.8A 400V SCR Thyristor Transistor to purchase. Order online or visit our shop ElectronicsBD to get yours at the lowest price.

What is the latest and best price of MCR100-6 MCR100-6G MCR100 0.8A 400V SCR Thyristor Transistor in Bangladesh (BD) ?

The latest and special price of MCR100-6 MCR100-6G MCR100 0.8A 400V SCR Thyristor Transistor in Bangladesh is BDT 14 Taka. Buy best quality MCR100-6 MCR100-6G MCR100 0.8A 400V SCR Thyristor Transistor from ElectronicsBD at a special price in Bangladesh (BD). You can buy MCR100-6 MCR100-6G MCR100 0.8A 400V SCR Thyristor Transistor at best price from ElectronicsBD or visit ElectronicsBD Store. বাংলাদেশে আকর্ষণীয় মূল্যে কিনুন MCR100-6 MCR100-6G MCR100 0.8A 400V SCR Thyristor Transistor শুধুমাত্র ইলেকট্রনিক্স বিডি ElectronicsBD থেকে। ElectronicsBD বাংলাদেশের সকল প্রধান স্থান যেমন বরিশাল, চট্টগ্রাম, ঢাকা, খুলনা, রাজশাহী, রংপুর, ময়মনসিংহ, সিলেটে সহ সকল স্থানে পণ্য ডেলিভারি করে ।
3158

16 other products in the same category:

Availability: 10000 In Stock
  • High Power NPN Transistor – Suitable for low-frequency applications
  • Single Transistor Configuration – Easy to integrate into circuits
  • Compact SOT-32-3 Package – Space-efficient and reliable
  • Surface-Mount Technology (SMT/SMD) – Ensures secure placement on PCBs
Availability: 10000 In Stock

The 2N7000 MOSFET Transistor from Fairchild Semiconductor is a highly efficient component suitable for a variety of electronic applications. It features a maximum continuous drain current of 200mA and a maximum drain source voltage of 60V.

Key Features:

  • Maximum Continuous Drain Current: 200mA
  • Maximum Drain Source Voltage: 60V
  • Maximum Drain Source Resistance: 5Ω
  • Gate Threshold Voltage (VGS): Min = 0.8V, Max = 3V
  • Maximum Power Dissipation: 400mW
Availability: 10000 In Stock

G15N60 RUFD G15N60 15A 600V IGBT

Introducing the G15N60 RUFD G15N60 15A 600V IGBT, designed for high-performance applications. Key features include:

  • 75% lower Eoff compared to previous generation
  • Low conduction losses
  • Short circuit withstand time: 10 µs
  • Designed for motor controls and inverters
  • NPT-Technology for 600V applications offers:
    • Very tight parameter distribution
    • High ruggedness and temperature stable behavior
    • Parallel switching capability
Availability: 10000 In Stock

2SA1494 Transistors - Bipolar (BJT) - Single

The 2SA1494 is a high-performance PNP Bipolar Power Transistor designed for a variety of applications, including audio and general-purpose use. It offers high collector current and power dissipation, making it an excellent choice for demanding tasks.

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 17A
  • Collector Emitter Voltage (Vceo): 200V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
  • Collector Cutoff Current (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8A, 4V
  • Power Dissipation (Pd): 200W
  • Transition Frequency (ft): 20MHz
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: MT-200
Availability: 10000 In Stock
  • High voltage rating of 1500V for superior performance in demanding applications
  • Low saturation voltage of 5V (Max.) ensuring efficient operation
  • High-speed switching capabilities with a typical rise time of 0.3 µs
  • Built-in damper type for enhanced protection
Availability: 10000 In Stock

The 10N60C N-Channel MOSFET is a high-efficiency power transistor designed for demanding applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A, it ensures reliable performance. This MOSFET features a TO-220F package for through hole mounting.

Key Features:

  • Part NO.: AOTF10N60
  • Package: TO-220F
  • FET Type: MOSFET N-Channel, Metal Oxide
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 1600pF @ 25V
  • Power - Max: 50W
  • Mounting Type: Through Hole
  • Supplier: SICSTOCK
Availability: 10000 In Stock

Avalanche Rugged Technology – Ensures high durability and reliability
Rugged Gate Oxide Technology – Provides better gate protection
Lower Input Capacitance – Reduces switching losses for efficiency
Improved Gate Charge – Enhances performance in high-frequency applications

Availability: 10000 In Stock

The D880 NPN Power Transistor is designed for audio amplification and switching applications. Key features include:

  • Low-frequency power amplifier
  • DC Current Gain (hFE): 60 to 300
  • Continuous Collector Current (Ic): 3A
  • Collector-Emitter Voltage (VCE): 60V
  • Collector-Base Voltage (VCB): 60V
  • Emitter-Base Voltage (VEB): 7V
  • Available in TO-220 package

FGA15N120 IGBT

৳229.00
Availability: 10000 In Stock

FGA15N120 IGBT - High Performance, Low Saturation Voltage

The FGA15N120 IGBT is an advanced NPT trench technology device with superior conduction and switching performances. This product is designed for applications requiring high avalanche ruggedness and easy parallel operation, such as induction heating and microwave ovens.

  • NPT Trench Technology, Positive Temperature Coefficient
  • Low Saturation Voltage: VCE(sat), typ = 1.9V
  • IC = 15A and TC = 25°C
  • Low Switching Loss: Eoff, typ = 0.6mJ
  • Extremely Enhanced Avalanche Capability
  • TO-3P Package
Availability: 10000 In Stock

The C106D Thyristor is a high-performance component designed for efficient power switching applications. With a nominal current of 4A and a reverse voltage rating (URRM) of 600V, this thyristor ensures reliable performance. Perfect for through hole mounting with a TO-225AA package.

Key Features:

  • Nominal Current: 4A
  • Reverse Voltage Rating (URRM): 600V
  • Mounting Form: TO-225AA
Availability: 10000 In Stock

The BTA26-600 24A 600V TRIAC is a high-performance component designed for efficient power switching applications. With a gate turn-on voltage of 1.3V and a peak off-state voltage of 600V, it ensures reliable performance in demanding environments. This TRIAC is perfect for through hole mounting.

Key Features:

  • Gate Turn-On Voltage (Vgt): 1.3V
  • Peak Off-State Voltage (Vdrm): 600V
  • On-State Current (It): 25.0A
  • Gate Current (Igt): 35mA
  • Average Gate Power Dissipation (Pg): 1W
  • Typical Voltage Change Over Time (dV/dT): 500V/µs