• Type: PNP Bipolar Small Signal Transistor
• Collector-Base Voltage (Vcb): 40V
• Collector-Emitter Voltage (Vce): 40V
• Emitter-Base Voltage (Veb): 5V

• Type: NPN Silicon Transistor
• Maximum Collector Current (Ic): 500mA
• Maximum Voltage (Vce): 300V
• Saturation Voltage: 500mV @ 2mA, 20mA

Explore the MJL4281 High Watt Transistor, a high-performance NPN bipolar junction transistor from ON Semiconductor. With a power dissipation of 230W, it is perfect for demanding electronic applications. This transistor is RoHS compliant and features a through-hole mounting style for easy integration into your projects.

Key Features:

• Category: Bipolar Transistors - BJT
• Collector-Emitter Voltage (VCEO Max): 350V
• Collector-Base Voltage (VCBO): 350V
• Emitter-Base Voltage (VEBO): 5V
• Maximum DC Collector Current: 15A
• Gain Bandwidth Product (fT): 35 MHz
• Maximum Operating Temperature: +150°C
• Package/Case: TO-264-3
• Mounting Style: Through Hole
• RoHS compliant

Enhance your electronic circuits with the Bangladesh MPSA42 NPN Output Transistor. This high-voltage, high-frequency transistor is perfect for applications requiring reliable performance and efficiency.

• Collector-Emitter Voltage (Vceo): 300V
• Collector-Base Voltage (Vcbo): 300V
• Collector Current (Ic): 0.5A
• hfe: 40 @ 10mA
• Power Dissipation (Ptot): 625mW
• Current-Gain-Bandwidth (ftotal): 50MHz
• Type: NPN

• High current capacity, capable of continuous drain current of 130-210A
• Supports a drain-to-source voltage of 60V
• Avalanche energy rating of 800 mJ for reliable performance under high-stress conditions
• Junction and storage temperature range from -55 to 175°C

The Toshiba A1962 Transistor is a high-performance component designed for various electronic applications. It offers reliable performance and efficiency for your projects. Key features include:

• High current capacity
• Low saturation voltage
• Compact and durable design
• Ideal for power amplification and switching

• Medium power transistor with hfe gain up to 50
• Improved linearity of hfe gain
• Maximum voltage across collector and emitter: 100V
• Maximum current allowed through collector: 3A DC

• High continuous drain current of up to 35A.
• Handles pulsed drain currents up to 50A.
• Robust drain-to-source breakdown voltage of 60V.
• Low drain-source resistance (0.018 Ohms) for minimal power loss.

MJ15025G PNP Transistor

The MJ15025G is a high-performance PNP Power Transistor from ON Semiconductor. Designed for a wide range of applications, it meets AEC-Q101 standards for automotive qualifications and is perfect for high power and high voltage tasks.

• Transistor Type: PNP
• Maximum DC Collector Current: 16 A
• Maximum Collector Emitter Voltage: 250 V
• Package Type: TO-204
• Mounting Type: Through Hole

Enhance your electronic circuits with the Bangladesh C2073 NPN Power Transistor. This high-performance transistor is perfect for applications requiring reliable and efficient power dissipation and voltage regulation.

• Type Designator: 2SC2073
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector Power Dissipation: 25W
• Maximum Collector-Base Voltage: 150V
• Maximum Collector-Emitter Voltage: 150V
• Maximum Emitter-Base Voltage: 5V
• Maximum Collector Current: 1.5A
• Maximum Temperature: 150°C
• Transition Frequency: 1MHz
• Collector Capacitance: 70pF
• Forward Current Transfer Ratio (hFE): Min 40
• Package: TO220

Specifications:

• Type: NPN Silicon High-Frequency Transistor
• Collector-Emitter Voltage (Vce): 15V
• Collector-Base Voltage (Vcb): 15V
• Emitter-Base Voltage (Veb): 2V
• Collector Current (Ic): 25mA
• Power Dissipation (Ptot): 300mW
• Transition Frequency (ft): 5GHz
• Package Type: TO-50
• Operating Temperature Range: -65°C to +150°C

Package:

1x BFR91A Transistor

The MJE3055 and MJE2955 Power Transistors are designed for general-purpose switching and amplifier applications. These transistors ensure reliable performance and are ideal for various industrial and electronic projects in Bangladesh.

Key Features:

• DC current gain specified to 10 amperes
• High current gain with f_T = 2.0 MHz (Min) at I_C = 500 mAdc
• Durable and reliable construction
• Suitable for various switching and amplification tasks
• Easy to install and use in different circuits

The Sil Pad Transistor Pad is made from high-quality silicone rubber, providing excellent thermal conductivity and electrical insulation. Key features include:

• High thermal conductivity for efficient heat dissipation.
• Electrical insulation to protect sensitive electronic components.
• Flexible and easy to apply.
• Available in various thicknesses and sizes.

• N-Channel Power MOSFET
• High continuous drain current capacity (9.2A)
• Low drain to source resistance (0.27 Ohms)
• Fast rise time and fall time (30nS and 20nS respectively)

The D2499 Silicon Diffused Power Transistor is designed for high-performance applications. Key features include:

• Collector-Emitter Voltage (V_ce): 600V
• Collector-Base Voltage (V_cb): 1500V
• Emitter-Base Voltage (V_eb): 5V
• Collector Current (I_c): 6A
• Power Dissipation (P_tot): 50W
• DC Current Gain (h_FE): 8 to 25
• Transition Frequency (f_t): 2MHz
• Package: TO-3PF

The BD140 PNP Power Transistor is ideal for audio amplifiers, switching loads under 1.5A, battery chargers, power supplies, motor drivers, and Darlington pairs. This versatile transistor ensures reliable performance in various electronic applications.

Key Features:

• Audio Amplifiers
• Switching Loads under 1.5A
• Battery Chargers
• Power Supplies
• Motor Driver
• Darlington Pair