Specifications:
- Type: N-Channel MOSFET
- Maximum Drain-Source Voltage (Vds): 400V
- Maximum Continuous Drain Current (Id): 5.5A
- Gate-Source Threshold Voltage (Vgs(th)): 2.0 - 4.0V
- Rds(on): 1.0Ω at Vgs = 10V
- Package Type: TO-220
- Power Dissipation: 80W
- Junction-to-Case Thermal Resistance: 62.5°C/W
- Operating Temperature Range: -55°C to +150°C
Package:
1x IRF730 MOSFET N-Chan 400V 5.5 Amp TO-220
Description:
The IRF730 MOSFET is a high-voltage N-channel MOSFET designed for power switching and control applications. With a maximum drain-source voltage of 400V and a 5.5A continuous drain current, this MOSFET is ideal for use in power supplies, motor drivers, and other high-power applications. The TO-220 package offers easy integration and effective heat dissipation. This MOSFET also features low Rds(on) for efficient conduction and reduced power loss, making it perfect for both low-voltage and high-voltage switching tasks.
FAQ:
-
What is the maximum voltage the IRF730 can handle?
- The IRF730 can handle a maximum drain-source voltage of 400V, making it suitable for high-voltage power applications.
-
How much current can the IRF730 MOSFET handle?
- This MOSFET can handle up to 5.5A of continuous drain current, making it ideal for power control circuits.
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What is the gate threshold voltage (Vgs(th)) of the IRF730?
- The gate-source threshold voltage (Vgs(th)) of the IRF730 is between 2.0V and 4.0V, which ensures efficient operation at low voltages.
-
Can the IRF730 be used in a TO-220 package?
- Yes, the IRF730 comes in a TO-220 package, which provides easy mounting and good heat dissipation.
-
What applications is the IRF730 MOSFET suitable for?
- The IRF730 is ideal for use in power supplies, motor drivers, and other high-power applications due to its high voltage and current ratings.
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