Availability:
10000 In Stock
- PNP transistor type
- Maximum collector current: -800mA
- Maximum collector-emitter voltage: -45V
- Maximum collector-base voltage: -50V
IRF540 N Channel MOSFET
- Write a review
Model: 2005
৳57.00
No tax
The IRF540 N Channel MOSFET is an ideal choice for high-power switching applications. Capable of handling over 33A and 100V, this MOSFET comes in a TO-220 package, which fits perfectly into breadboards and perfboards. With a very low Rds(on) down to 44 milliohm and a low threshold voltage of less than 2.5V, it can be directly controlled by a microcontroller running on 5V logic. Heat sinking is simple with the TO-220 package, but thanks to the low Rds(on), you can often manage without additional heat sinking for high loads.
Key Features:
- Handles over 33A and 100V
- TO-220 package for easy integration
- Very low Rds(on) down to 44 milliohm
- Low threshold voltage (Vgs) of less than 2.5V
- Directly controllable from 5V logic microcontrollers
Safe Shopping
Data Protection.
Fast Delivery
Delivery all over Bangladesh.
Guarantee safe & secure checkout
The IRF540 N Channel MOSFET is a robust and efficient transistor designed for high-power switching tasks. It can switch currents over 33A and voltages up to 100V, making it suitable for demanding applications. The MOSFET is housed in a TO-220 package, allowing for easy placement into breadboards and perfboards, facilitating rapid prototyping and development.
One of the standout features of the IRF540 is its very low Rds(on), which can be as low as 44 milliohm depending on the gate-source voltage (Vgs). This low Rds(on) minimizes power loss and heat generation, making the MOSFET highly efficient. Additionally, the low threshold voltage of less than 2.5V ensures that it can be controlled directly by a microcontroller with 5V logic, simplifying circuit design.
While heat sinking is straightforward with the TO-220 package, the low Rds(on) means that for many high-load applications, additional heat sinks may not be necessary. This makes the IRF540 an excellent choice for power-efficient designs.
Product Details:
- Type: N Channel MOSFET
- Current Handling: Over 33A
- Voltage Handling: 100V
- Package: TO-220
- Rds(on): Down to 44 milliohm
- Threshold Voltage (Vgs): Less than 2.5V
Use of the Product:
The IRF540 is used in a variety of high-power switching applications, including motor control, power supplies, and DC-DC converters. Its ability to handle significant current and voltage, coupled with low power loss, makes it ideal for both industrial and hobbyist projects.
Benefits of the Product:
- High current and voltage handling capability
- Efficient switching with low Rds(on)
- Low threshold voltage for easy control
- Compact and easy-to-use TO-220 package
Frequently Asked Questions:
- Q: What is the current handling capability of the IRF540 MOSFET?
A: It can handle over 33A. - Q: What is the maximum voltage the IRF540 can switch?
A: The maximum voltage is 100V. - Q: Can the IRF540 be controlled directly by a microcontroller?
A: Yes, it has a low threshold voltage of less than 2.5V, making it compatible with 5V logic microcontrollers.
Tips for Use:
- Ensure proper orientation and pin connections to avoid damage.
- Check the datasheet for Rds(on) values at different Vgs levels.
- Consider heat sinking for prolonged high-current applications.
Package Included:
- 1 x IRF540 N Channel MOSFET
IRF540 N Channel MOSFET ElectronicsBD Bangladesh (BD)
In Bangladesh, you can get the best Quality and original IRF540 N Channel MOSFET from ElectronicsBD. We have a large collection of the latest IRF540 N Channel MOSFET to purchase. Order online or visit our shop ElectronicsBD to get yours at the lowest price.What is the latest and best price of IRF540 N Channel MOSFET in Bangladesh (BD) ?
The latest and special price of IRF540 N Channel MOSFET in Bangladesh is BDT 57 Taka. Buy best quality IRF540 N Channel MOSFET from ElectronicsBD at a special price in Bangladesh (BD). You can buy IRF540 N Channel MOSFET at best price from ElectronicsBD or visit ElectronicsBD Store. বাংলাদেশে আকর্ষণীয় মূল্যে কিনুন IRF540 N Channel MOSFET শুধুমাত্র ইলেকট্রনিক্স বিডি ElectronicsBD থেকে। ElectronicsBD বাংলাদেশের সকল প্রধান স্থান যেমন বরিশাল, চট্টগ্রাম, ঢাকা, খুলনা, রাজশাহী, রংপুর, ময়মনসিংহ, সিলেটে সহ সকল স্থানে পণ্য ডেলিভারি করে ।
2005
16 other products in the same category:
Availability:
10000 In Stock
- Low voltage, high current PNP transistor.
- High current gain (hFE: 85 to 300).
- Suitable for Class B push-pull transistor configurations.
- Compact TO-92 package for easy integration.
Availability:
1 In Stock
Specifications:
- Type: NPN Silicon High-Frequency Transistor
- Collector-Emitter Voltage (Vce): 15V
- Collector-Base Voltage (Vcb): 15V
- Emitter-Base Voltage (Veb): 2V
- Collector Current (Ic): 25mA
- Power Dissipation (Ptot): 300mW
- Transition Frequency (ft): 5GHz
- Package Type: TO-50
- Operating Temperature Range: -65°C to +150°C
Package:
1x BFR91A Transistor
Availability:
10000 In Stock
- NPN transistor with plastic casing for durability.
- Continuous collector current (IC) of 1.5A for high-power applications.
- High collector-emitter voltage (VCE) of 80V.
- Base current (Ib) of 0.5A for efficient switching.
Availability:
10000 In Stock
The 10N60C N-Channel MOSFET is a high-efficiency power transistor designed for demanding applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A, it ensures reliable performance. This MOSFET features a TO-220F package for through hole mounting.
Key Features:
- Part NO.: AOTF10N60
- Package: TO-220F
- FET Type: MOSFET N-Channel, Metal Oxide
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10A
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) @ Vds: 1600pF @ 25V
- Power - Max: 50W
- Mounting Type: Through Hole
- Supplier: SICSTOCK
Availability:
10000 In Stock
- Advanced HEXFET® Technology for high efficiency.
- Ultra-low on-resistance (Rds On) for minimal power loss.
- Fast switching speed, ideal for high-frequency applications.
- Dynamic dv/dt rating for improved performance.
Availability:
10000 In Stock
The 2SC4793 NPN transistor is designed for high voltage and high frequency applications. With a maximum collector power dissipation of 20W, this silicon transistor provides excellent performance in various electronic circuits. Key features include:
- Type Designator: 2SC4793
- Material: Silicon (Si)
- Polarity: NPN
- Maximum Collector-Base Voltage: 230V
- Maximum Collector-Emitter Voltage: 230V
- Maximum Emitter-Base Voltage: 5V
- Maximum Collector Current: 1A
- Maximum Temperature: 150°C
- Transition Frequency: 100MHz
- Collector Capacitance: 20pF
- Minimum Forward Current Transfer Ratio: 100
Availability:
10000 In Stock
The 2N3904 is an NPN general purpose transistor designed for various electronic applications. With a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V, it offers reliable performance. This transistor is ideal for through hole mounting.
Key Features:
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 300MHz
- Mounting Type: Through Hole
Availability:
10000 In Stock
The 78L09 Positive Voltage Regulator in a TO-92 package is designed for a wide range of applications. This regulator provides a fixed output voltage of +9V and can deliver up to 100mA of current. It features internal thermal overload protection, short-circuit current limiting, and output transistor safe-area compensation, ensuring reliable performance without external components.
Key Features:
- Output Voltage Range: +9V
- Output current up to 100mA
- No external components required
- Internal thermal overload protection
- Internal short-circuit current limiting
- Output transistor safe-area compensation
- Output voltage offered in 4% tolerance
Availability:
10000 In Stock
- High voltage NPN transistor with 160V rating
- Maximum collector current of 1A
- Power dissipation up to 900mW
- Compact TO-92 package for versatile use
Availability:
10000 In Stock
C1971 RF/VHF/UHF TO-220 Mitsubishi Transistor
The C1971 RF/VHF/UHF TO-220 Transistor by Mitsubishi offers excellent performance for radio frequency applications across a wide frequency range, including VHF and UHF bands. Ideal for high-frequency electronic circuits.
- Manufacturer: Mitsubishi
- Type: NPN Transistor
- Package: TO-220
- Applications: RF, VHF, UHF
Package Includes: 1x C1971 RF/VHF/UHF TO-220 Mitsubishi Transistor
Availability:
10000 In Stock
- NPN Transistor: Ideal for low to medium power amplification.
- High Current Handling: Capable of handling up to 500mA of collector current.
- Wide Voltage Range: Operates within a collector-emitter voltage of up to 40V.
- High Gain: Offers a current gain range of 20 – 300.
Availability:
10000 In Stock
The 16TTS12 Thyristors are designed for high-performance applications, providing a robust and reliable solution for your electronic needs. These thyristors feature:
- Average Current (IT(AV)): 10 A
- Repetitive Peak Off-State Voltage (VDRM/VRRM): 800V, 1200V
- On-State Voltage (VTM): 1.4 V
- Gate Trigger Current (IGT): 60 mA
- Operating Junction Temperature (TJ): -40°C to 125°C
- Circuit Configuration: Single SCR
Perfect for use in circuits that require precise and reliable switching capabilities.
Availability:
10000 In Stock
- Package Type: TO-220
- Transistor Type: NPN
- Max Collector Current (IC): 6A (6000mA)
- Max Collector-Emitter Voltage (VCE): 100V
Availability:
Out of stock
- Bi-Polar NPN Transistor
- DC Current Gain (hFE): 900 (Maximum)
- Continuous Collector Current (IC): 200mA
- Emitter Base Voltage (VBE): 5V
Availability:
10000 In Stock
2SA1216 Audio Amp Transistor
Experience superior audio amplification with the 2SA1216 Audio Amp Transistor. Designed for high power performance and reliability, this transistor is perfect for enhancing your audio projects.
- Model: 2SA1216
- Parameters: 200W/180V/17A
- Package: 1x 2SA1216 Audio Amp Transistor