FGA15N120 IGBT - High Performance, Low Saturation Voltage

The FGA15N120 IGBT is an advanced NPT trench technology device with superior conduction and switching performances. This product is designed for applications requiring high avalanche ruggedness and easy parallel operation, such as induction heating and microwave ovens.

• NPT Trench Technology, Positive Temperature Coefficient
• Low Saturation Voltage: VCE(sat), typ = 1.9V
• IC = 15A and TC = 25°C
• Low Switching Loss: Eoff, typ = 0.6mJ
• Extremely Enhanced Avalanche Capability
• TO-3P Package

D400 NPN Silicon Transistor

The D400 NPN Silicon Transistor is a reliable and efficient transistor designed for a wide range of electronic applications. Featuring low power consumption and high performance, this transistor is perfect for enhancing the functionality of your electronic circuits. Key features include:

• Type: NPN Silicon Transistor
• Model: D400
• High performance and reliability
• Low power consumption
• Ideal for various electronic applications

Key Features:

• Type: Thyristors - SCRs
• Off-State Voltage: 500V
• Gate Trigger Voltage (Max): 1.5V
• Gate Trigger Current (Max): 15mA
• On-State Voltage (Max): 1.75V
• On-State Current (AV) (Max): 7.5A
• On-State Current (RMS) (Max): 12A
• Hold Current (Max): 20mA
• Off-State Current (Max): 500µA
• Non-Repetitive Surge Current: 120A, 132A
• Operating Temperature: -40°C to 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Base Part Number: BT151

• Pre-Amplifier: Low Level, Low Noise NPN Transistor
• Current Gain (hFE): 60 to 1000 (Good Linearity)
• Continuous Collector Current (IC): 100mA
• Collector-Emitter Voltage (VCEO): 45V

The IRF840 N-Channel MOSFET is a high-performance power MOSFET designed for efficient switching applications. With a high voltage rating and robust current handling capabilities, it is ideal for various power control circuits.

Key Features:

• Drain-Source Voltage (Vds): 500V
• Drain-Gate Voltage (Vdg): 500V
• Gate-Source Voltage (Vgs): 20V
• Drain Current (Id): 8.0A
• Power Dissipation (Ptot): 125W
• Type: N-Channel

• PNP transistor with high current capacity
• Designed for switching and amplification in power applications
• High collector-to-emitter voltage
• Capable of handling pulse currents up to 13A

The 18N50 N-Channel Power MOSFET is designed for high-efficiency power switching applications. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 18A, it offers reliable performance. Ideal for various demanding electronic circuits.

Key Features:

• Drain to Source Voltage (Vdss): 500V
• Continuous Drain Current (Id): 18A
• High Efficiency and Performance
• N-Channel MOSFET

The 78L09 Positive Voltage Regulator in a TO-92 package is designed for a wide range of applications. This regulator provides a fixed output voltage of +9V and can deliver up to 100mA of current. It features internal thermal overload protection, short-circuit current limiting, and output transistor safe-area compensation, ensuring reliable performance without external components.

Key Features:

• Output Voltage Range: +9V
• Output current up to 100mA
• No external components required
• Internal thermal overload protection
• Internal short-circuit current limiting
• Output transistor safe-area compensation
• Output voltage offered in 4% tolerance

The 2SC4793 NPN transistor is designed for high voltage and high frequency applications. With a maximum collector power dissipation of 20W, this silicon transistor provides excellent performance in various electronic circuits. Key features include:

• Type Designator: 2SC4793
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector-Base Voltage: 230V
• Maximum Collector-Emitter Voltage: 230V
• Maximum Emitter-Base Voltage: 5V
• Maximum Collector Current: 1A
• Maximum Temperature: 150°C
• Transition Frequency: 100MHz
• Collector Capacitance: 20pF
• Minimum Forward Current Transfer Ratio: 100

• Op-amp coupled with MOSFET at the output.
• Wide power supply range for flexibility.
• Single supply operation (5V to 16V) or dual supply operation (±2.5V to ±8V).
• High output voltage capability (maximum 13.3V).

• High power dissipation of 65 W, suitable for amplifiers and switching applications.
• Maximum collector current of 6 A, capable of handling high current loads.
• Wide operating junction temperature range from -65°C to +150°C.
• Reliable performance with a DC current gain of 30.

• High Voltage Rating: Supports 400V, suitable for high-voltage applications.
• High Current Capacity: Can handle up to 5.5A, making it ideal for power control circuits.
• Fast Switching: Offers fast switching capabilities, reducing power loss and improving efficiency.
• Low Gate-Source Voltage: Operates efficiently at low gate-source voltages, providing better control.

The NPN Transistor 25V 0.2A - BC109 offers reliable performance for various electronic applications. With a collector-emitter voltage of 25V and a transition frequency of 150MHz, it's ideal for general-purpose switching and amplification.

• Transistor Type: NPN
• Max Collector Current (Ic): 30mA
• Voltage - Collector-Emitter Breakdown (Max): 20V
• DC Current Gain (hFE): 67 @ 1mA, 10V

Specifications:

• Dynamic resistance: 30mΩ
• I2t value for fusing: 98 A²S
• Maximum peak reverse gate voltage: 5V
• Peak gate current: 4A
• Operating temperature range: -40°C to +125°C
• Storage temperature: -40°C to +150°C

Package:

• 1x TYN612 IC TYN612M Thyristor 12A 600V Unidirectional SCR Thyristor TO-220 Silicon Control Rectifier Transistor

• Bi-Polar PNP Transistor
• DC Current Gain (hFE): Maximum 300
• Continuous Collector Current (IC): 100mA

FGA15N120 IGBT - High Performance, Low Saturation Voltage

The FGA15N120 IGBT is an advanced NPT trench technology device with superior conduction and switching performances. This product is designed for applications requiring high avalanche ruggedness and easy parallel operation, such as induction heating and microwave ovens.

• NPT Trench Technology, Positive Temperature Coefficient
• Low Saturation Voltage: VCE(sat), typ = 1.9V
• IC = 15A and TC = 25°C
• Low Switching Loss: Eoff, typ = 0.6mJ
• Extremely Enhanced Avalanche Capability
• TO-3P Package

D400 NPN Silicon Transistor

The D400 NPN Silicon Transistor is a reliable and efficient transistor designed for a wide range of electronic applications. Featuring low power consumption and high performance, this transistor is perfect for enhancing the functionality of your electronic circuits. Key features include:

• Type: NPN Silicon Transistor
• Model: D400
• High performance and reliability
• Low power consumption
• Ideal for various electronic applications

Key Features:

• Type: Thyristors - SCRs
• Off-State Voltage: 500V
• Gate Trigger Voltage (Max): 1.5V
• Gate Trigger Current (Max): 15mA
• On-State Voltage (Max): 1.75V
• On-State Current (AV) (Max): 7.5A
• On-State Current (RMS) (Max): 12A
• Hold Current (Max): 20mA
• Off-State Current (Max): 500µA
• Non-Repetitive Surge Current: 120A, 132A
• Operating Temperature: -40°C to 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Base Part Number: BT151

• Pre-Amplifier: Low Level, Low Noise NPN Transistor
• Current Gain (hFE): 60 to 1000 (Good Linearity)
• Continuous Collector Current (IC): 100mA
• Collector-Emitter Voltage (VCEO): 45V

The IRF840 N-Channel MOSFET is a high-performance power MOSFET designed for efficient switching applications. With a high voltage rating and robust current handling capabilities, it is ideal for various power control circuits.

Key Features:

• Drain-Source Voltage (Vds): 500V
• Drain-Gate Voltage (Vdg): 500V
• Gate-Source Voltage (Vgs): 20V
• Drain Current (Id): 8.0A
• Power Dissipation (Ptot): 125W
• Type: N-Channel