Offer


FGA15N120 IGBT

Model: 2188

৳229.00
No tax

FGA15N120 IGBT - High Performance, Low Saturation Voltage

The FGA15N120 IGBT is an advanced NPT trench technology device with superior conduction and switching performances. This product is designed for applications requiring high avalanche ruggedness and easy parallel operation, such as induction heating and microwave ovens.

  • NPT Trench Technology, Positive Temperature Coefficient
  • Low Saturation Voltage: VCE(sat), typ = 1.9V
  • IC = 15A and TC = 25°C
  • Low Switching Loss: Eoff, typ = 0.6mJ
  • Extremely Enhanced Avalanche Capability
  • TO-3P Package
Quantity
Add to wishlist
In Stock

  Safe Shopping

Data Protection.

  Fast Delivery

Delivery all over Bangladesh.

Guarantee safe & secure checkout

Product Details:

The FGA15N120 IGBT leverages Fairchild's proprietary trench design and advanced NPT technology to offer exceptional performance. Operating at 1200V, it boasts low saturation voltage and high avalanche ruggedness, making it ideal for high-efficiency and high-reliability applications.

Use of the Product:

This IGBT is perfect for resonant or soft-switching applications such as induction heating, microwave ovens, and other high-frequency power electronic systems.

Benefits of the Product:

  • Superior conduction and switching performances
  • High avalanche ruggedness
  • Easy parallel operation
  • Low switching loss and saturation voltage

Frequently Asked Questions:

Q: What is the operating voltage of the FGA15N120 IGBT?

A: The FGA15N120 IGBT operates at 1200V.

Q: Is this IGBT suitable for induction heating applications?

A: Yes, it is specifically designed for resonant or soft-switching applications such as induction heating and microwave ovens.

Tips for Use:

  • Ensure proper heat dissipation to maintain optimal performance.
  • Utilize in applications where high-efficiency and low-loss operation are crucial.


FGA15N120 IGBT ElectronicsBD Bangladesh (BD)

In Bangladesh, you can get the best Quality and original FGA15N120 IGBT from ElectronicsBD. We have a large collection of the latest FGA15N120 IGBT to purchase. Order online or visit our shop ElectronicsBD to get yours at the lowest price.

What is the latest and best price of FGA15N120 IGBT in Bangladesh (BD) ?

The latest and special price of FGA15N120 IGBT in Bangladesh is BDT 229 Taka. Buy best quality FGA15N120 IGBT from ElectronicsBD at a special price in Bangladesh (BD). You can buy FGA15N120 IGBT at best price from ElectronicsBD or visit ElectronicsBD Store. বাংলাদেশে আকর্ষণীয় মূল্যে কিনুন FGA15N120 IGBT শুধুমাত্র ইলেকট্রনিক্স বিডি ElectronicsBD থেকে। ElectronicsBD বাংলাদেশের সকল প্রধান স্থান যেমন বরিশাল, চট্টগ্রাম, ঢাকা, খুলনা, রাজশাহী, রংপুর, ময়মনসিংহ, সিলেটে সহ সকল স্থানে পণ্য ডেলিভারি করে ।
2188

16 other products in the same category:

Availability: 10000 In Stock

Key Features:

  • Type: Thyristors - SCRs
  • Off-State Voltage: 500V
  • Gate Trigger Voltage (Max): 1.5V
  • Gate Trigger Current (Max): 15mA
  • On-State Voltage (Max): 1.75V
  • On-State Current (AV) (Max): 7.5A
  • On-State Current (RMS) (Max): 12A
  • Hold Current (Max): 20mA
  • Off-State Current (Max): 500µA
  • Non-Repetitive Surge Current: 120A, 132A
  • Operating Temperature: -40°C to 125°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Base Part Number: BT151
Availability: 10000 In Stock

The IRF9540 P-Channel MOSFET Transistor is designed for high voltage applications, offering robust performance and reliability. Key features include:

  • Drain-Source Voltage (Vds): -100V
  • Gate-Source Voltage (Vgs): 20V
  • Drain Current (Id): -23A
  • Power Dissipation (Ptot): 140W
  • Type: P-Channel
Availability: 10000 In Stock

The MD1803DFX High Voltage NPN Power Transistor is designed for enhanced performance in high voltage applications. Key features include:

  • Collector-Emitter Voltage (Vce): 80V
  • Collector-Base Voltage (Vcb): 80V
  • Emitter-Base Voltage (Veb): 5V
  • Collector Current (Ic): 3A
  • Power Dissipation (Ptot): 1.5W
  • DC Current Gain (hFE): 100-300
  • Transition Frequency (ft): 150MHz
  • Package: TO-92
Availability: 10000 In Stock

MJE340 NPN Power Transistor is ideal for high-voltage electronic circuits. Key features include:

  • Type: n-p-n
  • Collector-Emitter Voltage: 300 V
  • Collector-Base Voltage: 300 V
  • Emitter-Base Voltage: 5 V
  • Collector Current: 0.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 30 to 240
  • Operating Temperature Range: -65 to +150 °C
  • Package: TO-126

C4793 Transistor

৳39.00
Availability: 10000 In Stock

The 2SC4793 NPN transistor is designed for high voltage and high frequency applications. With a maximum collector power dissipation of 20W, this silicon transistor provides excellent performance in various electronic circuits. Key features include:

  • Type Designator: 2SC4793
  • Material: Silicon (Si)
  • Polarity: NPN
  • Maximum Collector-Base Voltage: 230V
  • Maximum Collector-Emitter Voltage: 230V
  • Maximum Emitter-Base Voltage: 5V
  • Maximum Collector Current: 1A
  • Maximum Temperature: 150°C
  • Transition Frequency: 100MHz
  • Collector Capacitance: 20pF
  • Minimum Forward Current Transfer Ratio: 100
Availability: 10000 In Stock

The 78L05 5V 100mA Positive Voltage Regulator is designed to provide a stable 5V output for small loads up to 100mA. Ideal for various power management applications, it features:

  • 5V Positive Voltage Regulator
  • Output Current up to 100mA
  • Maximum Input Voltage of 30V
  • Operating current (IQ) of 5mA
  • Internal Thermal Overload and Short Circuit Protection
Availability: 10000 In Stock

Enhance your electronic circuits with the Bangladesh C2073 NPN Power Transistor. This high-performance transistor is perfect for applications requiring reliable and efficient power dissipation and voltage regulation.

  • Type Designator: 2SC2073
  • Material: Silicon (Si)
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 25W
  • Maximum Collector-Base Voltage: 150V
  • Maximum Collector-Emitter Voltage: 150V
  • Maximum Emitter-Base Voltage: 5V
  • Maximum Collector Current: 1.5A
  • Maximum Temperature: 150°C
  • Transition Frequency: 1MHz
  • Collector Capacitance: 70pF
  • Forward Current Transfer Ratio (hFE): Min 40
  • Package: TO220
Availability: 10000 In Stock
  • NPN Transistor: Ideal for low to medium power amplification.
  • High Current Handling: Capable of handling up to 500mA of collector current.
  • Wide Voltage Range: Operates within a collector-emitter voltage of up to 40V.
  • High Gain: Offers a current gain range of 20 – 300.
Availability: 10000 In Stock

MJE15032G - Bipolar (BJT) Single Transistor

The MJE15032G is a high-performance NPN Bipolar Power Transistor designed for a variety of applications, including automotive. With high collector emitter voltage and power dissipation, it is ideal for demanding tasks.

  • Transistor Polarity: NPN
  • Collector Emitter Voltage (Vceo): 250V
  • Transition Frequency (ft): 30MHz
  • Power Dissipation (Pd): 50W
  • DC Collector Current: 8A
  • DC Current Gain (hFE): 70
  • Transistor Case Style: TO-220
  • No. of Pins: 3
  • Operating Temperature Max: 150°C
  • Product Range: MJxxxx Series
  • Automotive Qualification Standard
Availability: 10000 In Stock

Get reliable power performance with our High-Performance 2SB337 Silicon PNP Power Transistors. Designed for various electronic applications, these transistors provide excellent efficiency and durability.

  • Type Designator: 2SB337
  • Material: Ge (Germanium)
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 12 W
  • Maximum Collector-Base Voltage (Vcb): 40 V
  • Maximum Collector-Emitter Voltage (Vce): 30 V
  • Maximum Emitter-Base Voltage (Veb): 1 V
  • Maximum Collector Current (Ic max): 7 A
  • Max. Operating Junction Temperature (Tj): 90 °C
  • Transition Frequency (ft): 0.125 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 50
  • Noise Figure: -
  • Package: TO3
Availability: 10000 In Stock

The TFK897-E NPN Transistor is designed for high-performance switching and amplification applications. Key features include:

  • Collector-Emitter Voltage (Vce): 80V
  • Collector-Base Voltage (Vcb): 80V
  • Emitter-Base Voltage (Veb): 5V
  • Collector Current (Ic): 3A
  • Power Dissipation (Ptot): 1.5W
  • DC Current Gain (hFE): 100-300
  • Transition Frequency (ft): 150MHz
  • Package: TO-92
Availability: 10000 In Stock

The LM336 Voltage Reference Diode is essential for precision voltage regulation in various electronic applications. It ensures stable and reliable performance. Key features include:

  • Adjustable voltage reference
  • High accuracy and stability
  • Low temperature coefficient
  • Ideal for analog and digital circuits