The D2499 Silicon Diffused Power Transistor is a robust component designed for high-performance applications requiring high voltage handling. With a collector-emitter voltage (Vce) of 600V and a collector-base voltage (Vcb) of 1500V, this transistor is ideal for demanding industrial and commercial applications.
Product Details
Featuring a collector current (Ic) of 6A and a power dissipation (Ptot) of 50W, the D2499 ensures reliable performance in high voltage environments. Its DC current gain (hFE) ranges from 8 to 25, providing significant current gain for various applications. The transition frequency (ft) of 2MHz ensures high-speed operation.
Use of the Product
The D2499 is perfect for use in power amplification, signal processing, and other electronic projects requiring efficient switching and amplification. Its TO-3PF package allows for easy integration into various circuit designs.
Benefits of the Product
- High performance in switching and amplification applications
- Moderate to high voltage handling capability
- Significant current gain with a wide range of hFE
- High transition frequency for fast operation
- Easy integration with TO-3PF package
Frequently Asked Questions
- Q: What are the main applications of the D2499 Silicon Diffused Power Transistor?
- A: It is used in power amplification, signal processing, and other electronic projects requiring efficient switching and amplification.
- Q: What is the maximum collector-emitter voltage of this transistor?
- A: The maximum collector-emitter voltage (Vce) is 600V.
- Q: What is the power dissipation of the D2499 transistor?
- A: The power dissipation (Ptot) is 50W.
Tips for Use
Ensure proper heat management to maintain optimal performance. Refer to the datasheet for detailed specifications and application guidelines. Use appropriate biasing techniques for accurate switching and amplification operations.
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