FGA15N120 IGBT - High Performance, Low Saturation Voltage

The FGA15N120 IGBT is an advanced NPT trench technology device with superior conduction and switching performances. This product is designed for applications requiring high avalanche ruggedness and easy parallel operation, such as induction heating and microwave ovens.

• NPT Trench Technology, Positive Temperature Coefficient
• Low Saturation Voltage: VCE(sat), typ = 1.9V
• IC = 15A and TC = 25°C
• Low Switching Loss: Eoff, typ = 0.6mJ
• Extremely Enhanced Avalanche Capability
• TO-3P Package

Discover the MJL4302 High Watt Transistor, a high-performance PNP bipolar junction transistor from ON Semiconductor. With a power dissipation of 230W, it is perfect for demanding electronic applications. This transistor is RoHS compliant and features a through-hole mounting style for easy integration into your projects.

Key Features:

• Category: Bipolar Transistors - BJT
• Collector-Emitter Voltage (VCEO Max): 350V
• Collector-Base Voltage (VCBO): 350V
• Emitter-Base Voltage (VEBO): 5V
• Maximum DC Collector Current: 15A
• Gain Bandwidth Product (fT): 35 MHz
• Maximum Operating Temperature: +150°C
• Package/Case: TO-264-3
• Mounting Style: Through Hole
• RoHS compliant

2SC3858 High-Power NPN Transistors are designed for high-performance electronic applications. These transistors offer:

• Type: NPN
• Collector-Emitter Voltage: 200 V
• Collector-Base Voltage: 200 V
• Emitter-Base Voltage: 6 V
• Collector Current: 17 A
• Collector Dissipation: 200 W
• DC Current Gain (hfe): 50 to 180
• Transition Frequency: 20 MHz
• Operating Temperature Range: -55 to +150 °C
• Package: MT-200

The 2N3904 is an NPN general purpose transistor designed for various electronic applications. With a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V, it offers reliable performance. This transistor is ideal for through hole mounting.

Key Features:

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole

Get reliable power performance with our High-Performance 2SB337 Silicon PNP Power Transistors. Designed for various electronic applications, these transistors provide excellent efficiency and durability.

• Type Designator: 2SB337
• Material: Ge (Germanium)
• Polarity: PNP
• Maximum Collector Power Dissipation (Pc): 12 W
• Maximum Collector-Base Voltage (Vcb): 40 V
• Maximum Collector-Emitter Voltage (Vce): 30 V
• Maximum Emitter-Base Voltage (Veb): 1 V
• Maximum Collector Current (Ic max): 7 A
• Max. Operating Junction Temperature (Tj): 90 °C
• Transition Frequency (ft): 0.125 MHz
• Forward Current Transfer Ratio (hFE), MIN: 50
• Noise Figure: -
• Package: TO3

C3355 NPN RF Transistor

The C3355 is a high-performance NPN RF transistor, designed for various radio frequency applications. Key features include:

• Type Designator: 2SC3355
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 0.6W
• Maximum Collector-Base Voltage (Vcb): 20V
• Maximum Collector Current (Ic max): 0.1A
• Maximum Operating Junction Temperature (Tj): 125°C
• Transition Frequency (ft): 6500MHz
• Forward Current Transfer Ratio (hFE), MIN: 35
• Package: TO-92

The BTA16-600V 16A TRIAC is a high-performance component designed for efficient power switching applications. With a non-repetitive state current of 168A and a repetitive off-state voltage of 600V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220-3 package.

Key Features:

• Non-Repetitive State Current: 168A
• Rated Repetitive Off-State Voltage VDRM: 600V
• Off-State Leakage Current @ VDRM IDRM: 5μA
• On-State Voltage: 1.55V
• Holding Current Ih Max: 50mA
• Gate Trigger Voltage - Vgt: 1.3V
• Gate Trigger Current - Igt: 50mA
• Maximum Operating Temperature: +125°C
• Minimum Operating Temperature: -40°C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Packaging: Tube

Series: BTA16-600B

Discover the S8050 NPN Transistor, ideal for Class B push-pull audio amplifiers and general-purpose applications in Bangladesh. It offers a collector current of up to 700mA and a collector-emitter voltage of up to 20V, making it suitable for a variety of electronic projects.

The BS170 N-Channel MOSFET Transistor is a Pb-free device designed for low voltage and current applications. It boasts low offset and error voltage, high saturation current capability, and fast switching (TON = 4ns). Easily driven without a buffer, this MOSFET transistor ensures rugged and reliable performance.

Key Features:

• Pb-Free device
• Low offset and error voltage
• Easily driven without buffer
• High density cell design to minimize ON-state resistance RDS(ON)
• Voltage controlled small signal switch
• Particularly suitable for low voltage, low current application
• High saturation current capability
• Rugged and Reliable
• Fast switching (TON = 4ns)

• Type: NPN Bipolar Junction Transistor (BJT)
• Collector-Emitter Voltage (Vceo): 80V
• Collector Current (Ic): 15A
• DC Current Gain (hFE): 80 - 320

• Original Japanese Quality: 100% authentic TOSHIBA A1941 transistor.
• High Power Output: Perfect for high-power audio amplification and switching.
• Low Distortion: Ensures clear and accurate audio signal transmission.

• Type: NPN Medium Power Transistor
• Application: Ideal for voltage regulation, relay driver, generic switch, audio power amplifier, and DC-DC converter applications
• Peak Collector Current: 6A
• Collector to Base Voltage: 60V

• N-Channel Power MOSFET
• High continuous drain current capacity (9.2A)
• Low drain to source resistance (0.27 Ohms)
• Fast rise time and fall time (30nS and 20nS respectively)

• Compact TO92 package for easy circuit integration.
• Suitable for low-power amplification and switching applications.
• Handles up to 200mA collector current.
• High temperature resistance up to 125°C.

The 2N3866 High-Frequency NPN Transistor is a versatile component perfect for various high-frequency applications. It offers reliable performance with a wide operating range and significant current handling capabilities.

• Type: NPN
• Collector-Emitter Voltage: 30 V
• Collector-Base Voltage: 55 V
• Emitter-Base Voltage: 4 V
• Collector Current: 0.4 A
• Collector Dissipation: 5 W
• DC Current Gain (hfe): 10 to 200
• Transition Frequency: 500 MHz
• Operating Temperature Range: -65 to +200 °C

The 2N7000 MOSFET Transistor from Fairchild Semiconductor is a highly efficient component suitable for a variety of electronic applications. It features a maximum continuous drain current of 200mA and a maximum drain source voltage of 60V.

Key Features:

• Maximum Continuous Drain Current: 200mA
• Maximum Drain Source Voltage: 60V
• Maximum Drain Source Resistance: 5Ω
• Gate Threshold Voltage (VGS): Min = 0.8V, Max = 3V
• Maximum Power Dissipation: 400mW

FGA15N120 IGBT - High Performance, Low Saturation Voltage

The FGA15N120 IGBT is an advanced NPT trench technology device with superior conduction and switching performances. This product is designed for applications requiring high avalanche ruggedness and easy parallel operation, such as induction heating and microwave ovens.

• NPT Trench Technology, Positive Temperature Coefficient
• Low Saturation Voltage: VCE(sat), typ = 1.9V
• IC = 15A and TC = 25°C
• Low Switching Loss: Eoff, typ = 0.6mJ
• Extremely Enhanced Avalanche Capability
• TO-3P Package

Discover the MJL4302 High Watt Transistor, a high-performance PNP bipolar junction transistor from ON Semiconductor. With a power dissipation of 230W, it is perfect for demanding electronic applications. This transistor is RoHS compliant and features a through-hole mounting style for easy integration into your projects.

Key Features:

• Category: Bipolar Transistors - BJT
• Collector-Emitter Voltage (VCEO Max): 350V
• Collector-Base Voltage (VCBO): 350V
• Emitter-Base Voltage (VEBO): 5V
• Maximum DC Collector Current: 15A
• Gain Bandwidth Product (fT): 35 MHz
• Maximum Operating Temperature: +150°C
• Package/Case: TO-264-3
• Mounting Style: Through Hole
• RoHS compliant

2SC3858 High-Power NPN Transistors are designed for high-performance electronic applications. These transistors offer:

• Type: NPN
• Collector-Emitter Voltage: 200 V
• Collector-Base Voltage: 200 V
• Emitter-Base Voltage: 6 V
• Collector Current: 17 A
• Collector Dissipation: 200 W
• DC Current Gain (hfe): 50 to 180
• Transition Frequency: 20 MHz
• Operating Temperature Range: -55 to +150 °C
• Package: MT-200

The 2N3904 is an NPN general purpose transistor designed for various electronic applications. With a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V, it offers reliable performance. This transistor is ideal for through hole mounting.

Key Features:

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole

Get reliable power performance with our High-Performance 2SB337 Silicon PNP Power Transistors. Designed for various electronic applications, these transistors provide excellent efficiency and durability.

• Type Designator: 2SB337
• Material: Ge (Germanium)
• Polarity: PNP
• Maximum Collector Power Dissipation (Pc): 12 W
• Maximum Collector-Base Voltage (Vcb): 40 V
• Maximum Collector-Emitter Voltage (Vce): 30 V
• Maximum Emitter-Base Voltage (Veb): 1 V
• Maximum Collector Current (Ic max): 7 A
• Max. Operating Junction Temperature (Tj): 90 °C
• Transition Frequency (ft): 0.125 MHz
• Forward Current Transfer Ratio (hFE), MIN: 50
• Noise Figure: -
• Package: TO3