• Pre-Amplifier: Low Level, Low Noise NPN Transistor
• Current Gain (hFE): 60 to 1000 (Good Linearity)
• Continuous Collector Current (IC): 100mA
• Collector-Emitter Voltage (VCEO): 45V

• N-Channel MOSFET for high-power switching applications
• Capable of handling up to 200 V and 31A at 25°C
• Low Rds On for better efficiency: 75mOhm @ 15.5A, 10V
• High power dissipation capacity of 180W (Tc)

• Type: PNP Bipolar Junction Transistor (BJT)
• High Voltage Handling: Up to -250V Collector-Emitter Voltage (Vce)
• Compact TO-92 Package: Easy to mount and use
• Low Power Consumption: Suitable for low-current applications

The D2498 Silicon NPN Transistor is designed for high voltage applications, particularly in TV horizontal deflection and color TV circuits. Key features include:

• Collector-Emitter Voltage (U_ce): 600V
• Collector Current (I_c): 6A
• Type: NPN Transistor

The TFK897-E NPN Transistor is designed for high-performance switching and amplification applications. Key features include:

• Collector-Emitter Voltage (V_ce): 80V
• Collector-Base Voltage (V_cb): 80V
• Emitter-Base Voltage (V_eb): 5V
• Collector Current (I_c): 3A
• Power Dissipation (P_tot): 1.5W
• DC Current Gain (h_FE): 100-300
• Transition Frequency (f_t): 150MHz
• Package: TO-92

• Original Japanese Quality: 100% authentic TOSHIBA A1941 transistor.
• High Power Output: Perfect for high-power audio amplification and switching.
• Low Distortion: Ensures clear and accurate audio signal transmission.

The 2SC5200 NPN Epitaxial Silicon Transistor offers reliable performance for your high-power amplifier needs. This robust transistor is designed to handle high currents and voltages with ease, ensuring consistent performance in various applications.

Key Features:

• Collector-Base Voltage (VCBO): 230V
• Collector-Emitter Voltage (VCEO): 230V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 15A
• Base Current (IB): 1.5A
• Collector Power Dissipation (PC): 150W (Tc = 25°C)
• Junction Temperature (Tj): 150°C
• Storage Temperature Range (Tstg): -55 to 150°C

• N-Channel power MOSFET for high-efficiency switching applications
• Maximum drain-to-source voltage (VDS): 200V
• Continuous drain current (ID): 9A
• High pulsed drain current: 36A

• High Power Dissipation: Max 300 W
• High Drain-Source Voltage: 500 V
• Maximum Drain Current: 21 A
• Low On-State Resistance: 0.25 Ohm

• PNP polarity transistor for power applications
• High DC current gain of 25 at 1.5A and 4V
• Maximum operating frequency of 3 MHz
• Maximum collector-emitter voltage of 100V

The Toshiba A1962 Transistor is a high-performance component designed for various electronic applications. It offers reliable performance and efficiency for your projects. Key features include:

• High current capacity
• Low saturation voltage
• Compact and durable design
• Ideal for power amplification and switching

The IRF9540 P-Channel MOSFET Transistor is designed for high voltage applications, offering robust performance and reliability. Key features include:

• Drain-Source Voltage (V_ds): -100V
• Gate-Source Voltage (V_gs): 20V
• Drain Current (I_d): -23A
• Power Dissipation (P_tot): 140W
• Type: P-Channel

• Compact TO92 package for easy circuit integration.
• Suitable for low-power amplification and switching applications.
• Handles up to 200mA collector current.
• High temperature resistance up to 125°C.

Specifications:

• Type: NPN Bipolar Junction Transistor
• Collector Current: 150mA (Max)
• Voltage Ratings:
  • Collector-Emitter: 50V
  • Collector-Base: 60V
  • Emitter-Base: 5V
• Power Dissipation: 400mW
• Frequency: 200MHz
• Gain: 70 to 700
• Package: TO-92

Package:

• 1 x C945 Transistor (TO-92 Package)

• High Power Handling: Suitable for power-intensive applications
• Low-Frequency Performance: Optimized for low-frequency circuits
• Durable Silicon Material: Ensures stability and longevity
• Power Diode Capability: Functions efficiently as a power tube