• Type: PNP High-Voltage Transistor
• Collector-Base Voltage: 160V
• Collector-Emitter Voltage: 150V
• Emitter-Base Voltage: 5V

The TP 34N20 IGBT is a high-performance insulated-gate bipolar transistor designed for efficient power switching applications. With a voltage rating of 200V and a continuous current of 34A, it ensures reliable performance. The TO-220 package makes it easy to integrate into various circuit designs.

Key Features:

• Drain to Source Voltage (Vdss): 200V
• Continuous Drain Current (Id): 34A
• Power Dissipation: 136W
• Package: TO-220

• High current capacity, capable of continuous drain current of 130-210A
• Supports a drain-to-source voltage of 60V
• Avalanche energy rating of 800 mJ for reliable performance under high-stress conditions
• Junction and storage temperature range from -55 to 175°C

Discover the TOSHIBA TTA1943 TRANSISTOR, a PNP power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

• High current capacity for power applications
• Designed for switching and amplification
• Low saturation voltage
• Robust construction for reliable performance

The 16TTS12 Thyristors are designed for high-performance applications, providing a robust and reliable solution for your electronic needs. These thyristors feature:

• Average Current (IT(AV)): 10 A
• Repetitive Peak Off-State Voltage (VDRM/VRRM): 800V, 1200V
• On-State Voltage (VTM): 1.4 V
• Gate Trigger Current (IGT): 60 mA
• Operating Junction Temperature (TJ): -40°C to 125°C
• Circuit Configuration: Single SCR

Perfect for use in circuits that require precise and reliable switching capabilities.

• Ultra-soft with slight stickiness for easy handling.
• Good thermal conductivity for effective heat management.
• Feels like plasticine but has a degree of plasticity.
• Ideal for use with CPU, GPU, VGA cards, and IC components.

The IRF840 N-Channel MOSFET is a high-performance power MOSFET designed for efficient switching applications. With a high voltage rating and robust current handling capabilities, it is ideal for various power control circuits.

Key Features:

• Drain-Source Voltage (Vds): 500V
• Drain-Gate Voltage (Vdg): 500V
• Gate-Source Voltage (Vgs): 20V
• Drain Current (Id): 8.0A
• Power Dissipation (Ptot): 125W
• Type: N-Channel

The BT136 4A 500V TRIAC is a versatile component designed for efficient power switching applications. With a maximum on-state current of 4A and a repetitive peak off-state voltage of 500V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220B package.

Key Features:

• Product Type: TRIAC SCR
• IC Number: BT136
• Number of Pins: 3
• Package Type: TO-220B

Package contains: 1 x BT136 IC

• N-Channel Power MOSFET
• High continuous drain current capacity (9.2A)
• Low drain to source resistance (0.27 Ohms)
• Fast rise time and fall time (30nS and 20nS respectively)

• Floating channel designed for bootstrap operation
• Fully operational up to +600V
• Tolerant to negative transient voltage
• dV/dt immune

• PNP transistor with high current capacity
• Designed for switching and amplification in power applications
• High collector-to-emitter voltage
• Capable of handling pulse currents up to 13A

• High voltage rating of 1500V for superior performance in demanding applications
• Low saturation voltage of 5V (Max.) ensuring efficient operation
• High-speed switching capabilities with a typical rise time of 0.3 µs
• Built-in damper type for enhanced protection

The 2N3904 is an NPN general purpose transistor designed for various electronic applications. With a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V, it offers reliable performance. This transistor is ideal for through hole mounting.

Key Features:

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole

The 78L09 Positive Voltage Regulator in a TO-92 package is designed for a wide range of applications. This regulator provides a fixed output voltage of +9V and can deliver up to 100mA of current. It features internal thermal overload protection, short-circuit current limiting, and output transistor safe-area compensation, ensuring reliable performance without external components.

Key Features:

• Output Voltage Range: +9V
• Output current up to 100mA
• No external components required
• Internal thermal overload protection
• Internal short-circuit current limiting
• Output transistor safe-area compensation
• Output voltage offered in 4% tolerance

The 2N3055 NPN Power Transistor is a robust component designed for high-power applications. With a maximum collector current of 15A and a collector-emitter breakdown voltage of 60V, it ensures reliable performance. This transistor is ideal for chassis mounting and comes in a TO-3 package.

Key Features:

• Part NO.: 2N3055
• Package: TO-3
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
• Current - Collector Cutoff (Max): 700µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
• Power - Max: 115W
• Mounting Type: Chassis Mount
• Supplier Device Package: TO-3

Supplier: SICSTOCK