The 10N60C N-Channel MOSFET is a high-efficiency power transistor designed for demanding applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A, it ensures reliable performance. This MOSFET features a TO-220F package for through hole mounting.

Key Features:

• Part NO.: AOTF10N60
• Package: TO-220F
• FET Type: MOSFET N-Channel, Metal Oxide
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10A
• Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) @ Vds: 1600pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Supplier: SICSTOCK

Enhance your electronic circuits with the Bangladesh MPSA42 NPN Output Transistor. This high-voltage, high-frequency transistor is perfect for applications requiring reliable performance and efficiency.

• Collector-Emitter Voltage (Vceo): 300V
• Collector-Base Voltage (Vcbo): 300V
• Collector Current (Ic): 0.5A
• hfe: 40 @ 10mA
• Power Dissipation (Ptot): 625mW
• Current-Gain-Bandwidth (ftotal): 50MHz
• Type: NPN

• High current capacity for power applications
• Designed for switching and amplification
• Low saturation voltage
• Robust construction for reliable performance

• High Voltage & Current Handling: 100V Drain-Source voltage and 42A continuous drain current.
• Low Rds On for improved power efficiency.
• 160W Maximum Power Dissipation, ensuring stable performance under load.
• Gate-Source Voltage up to 20V for flexible control.

The Radiolink AT9S Pro Remote Control is a versatile transmitter and receiver designed for RC models, including airplanes, helicopters, drones, and more. With 10/12 channels and long-range control, it ensures stable and reliable performance for all your RC adventures.

Key Features:

• 10/12 Channels
• Long-range control up to 2.1 miles (3.4km)
• Supports multiple models (airplanes, helicopters, drones, cars, boats, etc.)
• Real-time telemetry information
• Signal strength indicator (RSSI) alerts
• Low voltage alarm
• Fail-safe protection
• 2.8-inch LCD screen with DD sounds and vibration alerts

The IRF840 N-Channel MOSFET is a high-performance power MOSFET designed for efficient switching applications. With a high voltage rating and robust current handling capabilities, it is ideal for various power control circuits.

Key Features:

• Drain-Source Voltage (Vds): 500V
• Drain-Gate Voltage (Vdg): 500V
• Gate-Source Voltage (Vgs): 20V
• Drain Current (Id): 8.0A
• Power Dissipation (Ptot): 125W
• Type: N-Channel

• Low voltage, high current PNP transistor.
• High current gain (hFE: 85 to 300).
• Suitable for Class B push-pull transistor configurations.
• Compact TO-92 package for easy integration.

The 2SC5242 Bipolar Transistor is a high-performance NPN transistor designed for a wide range of applications. With a collector-emitter voltage of 250V, collector current of 17A, and a dissipation of 130W, it offers robust performance and reliability. This transistor is housed in a TO-3P package, making it suitable for various electronic projects.

Key Features:

• Type: NPN
• Collector-Emitter Voltage: 250V
• Collector-Base Voltage: 250V
• Emitter-Base Voltage: 5V
• Collector Current: 17A
• Collector Dissipation: 130W
• DC Current Gain (hfe): 55 to 160
• Transition Frequency: 30 MHz
• Operating and Storage Temperature Range: -55 to +150°C
• Package: TO-3P

• High Power NPN Transistor – Suitable for low-frequency applications
• Single Transistor Configuration – Easy to integrate into circuits
• Compact SOT-32-3 Package – Space-efficient and reliable
• Surface-Mount Technology (SMT/SMD) – Ensures secure placement on PCBs

• Transistor Type: PNP
• Maximum Collector Current (Ic): 500 mA
• Maximum Collector-Emitter Breakdown Voltage: 300 V
• Maximum Collector Cutoff Current (ICBO): 100µA
• DC Current Gain (hFE) @ Ic, Vce: Minimum 30 @ 50mA, 10V

• NPN Transistor: Ideal for low to medium power amplification.
• High Current Handling: Capable of handling up to 500mA of collector current.
• Wide Voltage Range: Operates within a collector-emitter voltage of up to 40V.
• High Gain: Offers a current gain range of 20 – 300.

The 2SA1962 Bipolar Transistor is a high-performance PNP transistor designed for various electronic applications. It features a collector-emitter voltage of -250V, a collector current of -17A, and a collector dissipation of 130W, ensuring robust performance and reliability. This transistor is housed in a TO-3P package, making it ideal for demanding environments.

Key Features:

• Type: PNP
• Collector-Emitter Voltage: -250V
• Collector-Base Voltage: -250V
• Emitter-Base Voltage: -5V
• Collector Current: -17A
• Collector Dissipation: 130W
• DC Current Gain (hfe): 55 to 160
• Transition Frequency: 30 MHz
• Operating and Storage Temperature Range: -50 to +150°C
• Package: TO-3P

BC848 SMD General Purpose NPN Transistor

The BC848 SMD is a versatile NPN transistor designed for general-purpose applications. This SMD plastic package component operates efficiently across a wide temperature range, making it suitable for various switching and amplification tasks.

• General Purpose NPN Transistor
• Maximum Collector-Emitter Voltage: 30V
• Maximum Collector Current: 100mA
• Total Power Dissipation: 250mW
• Minimum DC Current Gain: 200

• Package Type: TO-220
• Transistor Type: NPN
• Max Collector Current (IC): 6A (6000mA)
• Max Collector-Emitter Voltage (VCE): 100V

• Compact TO92 package for easy circuit integration.
• Suitable for low-power amplification and switching applications.
• Handles up to 200mA collector current.
• High temperature resistance up to 125°C.