- PNP transistor with high current capacity
- Designed for switching and amplification in power applications
- High collector-to-emitter voltage
- Capable of handling pulse currents up to 13A
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BU806 Transistor
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Model: 2278
Introducing the BU806 NPN Transistor, a high-performance silicon transistor designed for a wide range of electronic applications. It boasts impressive specifications, including a maximum collector power dissipation of 60W and a maximum collector-emitter voltage of 200V. Key features include:
- Type Designator: BU806
- Material of Transistor: Si (Silicon)
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 60 W
- Maximum Collector-Base Voltage (Vcb): 400 V
- Maximum Collector-Emitter Voltage (Vce): 200 V
- Maximum Emitter-Base Voltage (Veb): 5 V
- Maximum Collector Current (Ic max): 8 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Forward Current Transfer Ratio (hFE), MIN: 100
- Package: TO220
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Product Details:
The BU806 NPN Transistor is a reliable and versatile silicon transistor designed for high power applications. It features a high collector power dissipation of 60W and can handle a maximum collector-emitter voltage of 200V, making it suitable for a variety of demanding projects.
Uses of the Product:
This transistor is ideal for use in power amplification, switching applications, and other high-power electronic circuits. Its TO220 package ensures easy mounting and heat dissipation, making it perfect for both professional and DIY projects.
Benefits of the Product:
- High Power Dissipation: Capable of handling high power levels with a maximum dissipation of 60W.
- Wide Voltage Range: Can operate with collector-base voltages up to 400V and collector-emitter voltages up to 200V.
- Robust Design: Durable silicon material and TO220 package ensure long-lasting performance.
- High Current Capacity: Supports a maximum collector current of 8A.
Frequently Asked Questions:
- What is the maximum collector power dissipation? The maximum collector power dissipation is 60W.
- What voltage range can the transistor handle? It can handle collector-base voltages up to 400V and collector-emitter voltages up to 200V.
- What is the operating junction temperature? The maximum operating junction temperature is 150 °C.
Tips for Use:
- Ensure proper heat sinking to prevent overheating.
- Verify the correct polarity when integrating into your circuit.
- Handle with care to avoid static discharge damage.
BU806 Transistor ElectronicsBD Bangladesh (BD)
In Bangladesh, you can get the best Quality and original BU806 Transistor from ElectronicsBD. We have a large collection of the latest BU806 Transistor to purchase. Order online or visit our shop ElectronicsBD to get yours at the lowest price.What is the latest and best price of BU806 Transistor in Bangladesh (BD) ?
The latest and special price of BU806 Transistor in Bangladesh is BDT 29 Taka. Buy best quality BU806 Transistor from ElectronicsBD at a special price in Bangladesh (BD). You can buy BU806 Transistor at best price from ElectronicsBD or visit ElectronicsBD Store. বাংলাদেশে আকর্ষণীয় মূল্যে কিনুন BU806 Transistor শুধুমাত্র ইলেকট্রনিক্স বিডি ElectronicsBD থেকে। ElectronicsBD বাংলাদেশের সকল প্রধান স্থান যেমন বরিশাল, চট্টগ্রাম, ঢাকা, খুলনা, রাজশাহী, রংপুর, ময়মনসিংহ, সিলেটে সহ সকল স্থানে পণ্য ডেলিভারি করে ।Thank you for the reviews ! Your comment is submitted
16 other products in the same category:
The D880 NPN Power Transistor is designed for audio amplification and switching applications. Key features include:
- Low-frequency power amplifier
- DC Current Gain (hFE): 60 to 300
- Continuous Collector Current (Ic): 3A
- Collector-Emitter Voltage (VCE): 60V
- Collector-Base Voltage (VCB): 60V
- Emitter-Base Voltage (VEB): 7V
- Available in TO-220 package
MJE340 NPN Power Transistor is ideal for high-voltage electronic circuits. Key features include:
- Type: n-p-n
- Collector-Emitter Voltage: 300 V
- Collector-Base Voltage: 300 V
- Emitter-Base Voltage: 5 V
- Collector Current: 0.5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 30 to 240
- Operating Temperature Range: -65 to +150 °C
- Package: TO-126
The 78L05 5V 100mA Positive Voltage Regulator is designed to provide a stable 5V output for small loads up to 100mA. Ideal for various power management applications, it features:
- 5V Positive Voltage Regulator
- Output Current up to 100mA
- Maximum Input Voltage of 30V
- Operating current (IQ) of 5mA
- Internal Thermal Overload and Short Circuit Protection
- Type: NPN Bipolar Junction Transistor (BJT)
- Collector-Emitter Voltage (Vceo): 80V
- Collector Current (Ic): 15A
- DC Current Gain (hFE): 80 - 320
2N3819 JFET N-Channel Transistor
The 2N3819 JFET N-Channel Transistor is designed for small signal amplification, providing reliable performance in various electronic applications. Key features include:
- JFET - N Type Channel transistor for small signal amplification.
- Drain-Source Voltage (Vds): 25 VDC.
- Drain-Gate Voltage (Vdg): 25 VDC.
- Gate-Source Voltage (Vgs): 25 VDC.
- Forward Gate Current (Igf): 10 mA.
- Power dissipation: 350 mW.
- On Characteristics (hFE): 20 mA Idss @ 15 Vds, Vgs =0.
Key Features:
- Type: Thyristors - SCRs
- Off-State Voltage: 500V
- Gate Trigger Voltage (Max): 1.5V
- Gate Trigger Current (Max): 15mA
- On-State Voltage (Max): 1.75V
- On-State Current (AV) (Max): 7.5A
- On-State Current (RMS) (Max): 12A
- Hold Current (Max): 20mA
- Off-State Current (Max): 500µA
- Non-Repetitive Surge Current: 120A, 132A
- Operating Temperature: -40°C to 125°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Base Part Number: BT151
The BT136 4A 500V TRIAC is a versatile component designed for efficient power switching applications. With a maximum on-state current of 4A and a repetitive peak off-state voltage of 500V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220B package.
Key Features:
- Product Type: TRIAC SCR
- IC Number: BT136
- Number of Pins: 3
- Package Type: TO-220B
Package contains: 1 x BT136 IC
- Darlington Medium-power NPN Transistor
- High DC Current Gain (hFE), typically 1000
- Continuous Collector Current (IC): 5A
- Collector-Emitter Voltage (VCE): 100V
- Transistor Type: NPN
- Max Collector Current (IC): 5A
- Max Collector-Emitter Voltage (VCE): 20V
- Max Collector-Base Voltage (VCB): 40V
The 2N3866 High-Frequency NPN Transistor is a versatile component perfect for various high-frequency applications. It offers reliable performance with a wide operating range and significant current handling capabilities.
- Type: NPN
- Collector-Emitter Voltage: 30 V
- Collector-Base Voltage: 55 V
- Emitter-Base Voltage: 4 V
- Collector Current: 0.4 A
- Collector Dissipation: 5 W
- DC Current Gain (hfe): 10 to 200
- Transition Frequency: 500 MHz
- Operating Temperature Range: -65 to +200 °C
The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.
Key Features:
- Part NO.: FQA24N60
- Package: TO-3P
- FET Type: MOSFET N-Channel, Metal Oxide
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 23.5A
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) @ Vgs: 145nC @ 10V
- Input Capacitance (Ciss) @ Vds: 5500pF @ 25V
- Power - Max: 310W
- Mounting Type: Through Hole
- Supplier: SICSTOCK
- Medium power transistor with hfe gain up to 50
- Improved linearity of hfe gain
- Maximum voltage across collector and emitter: 100V
- Maximum current allowed through collector: 3A DC
Specifications:
- Dynamic resistance: 30mΩ
- I2t value for fusing: 98 A²S
- Maximum peak reverse gate voltage: 5V
- Peak gate current: 4A
- Operating temperature range: -40°C to +125°C
- Storage temperature: -40°C to +150°C
Package:
- 1x TYN612 IC TYN612M Thyristor 12A 600V Unidirectional SCR Thyristor TO-220 Silicon Control Rectifier Transistor
- High Voltage & Current Handling: 100V Drain-Source voltage and 42A continuous drain current.
- Low Rds On for improved power efficiency.
- 160W Maximum Power Dissipation, ensuring stable performance under load.
- Gate-Source Voltage up to 20V for flexible control.
- Drain-Source Voltage (Vds): -55V
- Gate-Source Voltage (Vgs): ±20V
- Continuous Drain Current (Id): -74A
- Power Dissipation (Ptot): 200W
- PNP transistor with high current capacity
- Designed for switching and amplification in power applications
- High collector-to-emitter voltage
- Capable of handling pulse currents up to 13A
The D880 NPN Power Transistor is designed for audio amplification and switching applications. Key features include:
- Low-frequency power amplifier
- DC Current Gain (hFE): 60 to 300
- Continuous Collector Current (Ic): 3A
- Collector-Emitter Voltage (VCE): 60V
- Collector-Base Voltage (VCB): 60V
- Emitter-Base Voltage (VEB): 7V
- Available in TO-220 package
MJE340 NPN Power Transistor is ideal for high-voltage electronic circuits. Key features include:
- Type: n-p-n
- Collector-Emitter Voltage: 300 V
- Collector-Base Voltage: 300 V
- Emitter-Base Voltage: 5 V
- Collector Current: 0.5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 30 to 240
- Operating Temperature Range: -65 to +150 °C
- Package: TO-126
The 78L05 5V 100mA Positive Voltage Regulator is designed to provide a stable 5V output for small loads up to 100mA. Ideal for various power management applications, it features:
- 5V Positive Voltage Regulator
- Output Current up to 100mA
- Maximum Input Voltage of 30V
- Operating current (IQ) of 5mA
- Internal Thermal Overload and Short Circuit Protection
- Type: NPN Bipolar Junction Transistor (BJT)
- Collector-Emitter Voltage (Vceo): 80V
- Collector Current (Ic): 15A
- DC Current Gain (hFE): 80 - 320
2N3819 JFET N-Channel Transistor
The 2N3819 JFET N-Channel Transistor is designed for small signal amplification, providing reliable performance in various electronic applications. Key features include:
- JFET - N Type Channel transistor for small signal amplification.
- Drain-Source Voltage (Vds): 25 VDC.
- Drain-Gate Voltage (Vdg): 25 VDC.
- Gate-Source Voltage (Vgs): 25 VDC.
- Forward Gate Current (Igf): 10 mA.
- Power dissipation: 350 mW.
- On Characteristics (hFE): 20 mA Idss @ 15 Vds, Vgs =0.
Key Features:
- Type: Thyristors - SCRs
- Off-State Voltage: 500V
- Gate Trigger Voltage (Max): 1.5V
- Gate Trigger Current (Max): 15mA
- On-State Voltage (Max): 1.75V
- On-State Current (AV) (Max): 7.5A
- On-State Current (RMS) (Max): 12A
- Hold Current (Max): 20mA
- Off-State Current (Max): 500µA
- Non-Repetitive Surge Current: 120A, 132A
- Operating Temperature: -40°C to 125°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Base Part Number: BT151
The BT136 4A 500V TRIAC is a versatile component designed for efficient power switching applications. With a maximum on-state current of 4A and a repetitive peak off-state voltage of 500V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220B package.
Key Features:
- Product Type: TRIAC SCR
- IC Number: BT136
- Number of Pins: 3
- Package Type: TO-220B
Package contains: 1 x BT136 IC
- Darlington Medium-power NPN Transistor
- High DC Current Gain (hFE), typically 1000
- Continuous Collector Current (IC): 5A
- Collector-Emitter Voltage (VCE): 100V
- Transistor Type: NPN
- Max Collector Current (IC): 5A
- Max Collector-Emitter Voltage (VCE): 20V
- Max Collector-Base Voltage (VCB): 40V
The 2N3866 High-Frequency NPN Transistor is a versatile component perfect for various high-frequency applications. It offers reliable performance with a wide operating range and significant current handling capabilities.
- Type: NPN
- Collector-Emitter Voltage: 30 V
- Collector-Base Voltage: 55 V
- Emitter-Base Voltage: 4 V
- Collector Current: 0.4 A
- Collector Dissipation: 5 W
- DC Current Gain (hfe): 10 to 200
- Transition Frequency: 500 MHz
- Operating Temperature Range: -65 to +200 °C
The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.
Key Features:
- Part NO.: FQA24N60
- Package: TO-3P
- FET Type: MOSFET N-Channel, Metal Oxide
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 23.5A
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) @ Vgs: 145nC @ 10V
- Input Capacitance (Ciss) @ Vds: 5500pF @ 25V
- Power - Max: 310W
- Mounting Type: Through Hole
- Supplier: SICSTOCK
- Medium power transistor with hfe gain up to 50
- Improved linearity of hfe gain
- Maximum voltage across collector and emitter: 100V
- Maximum current allowed through collector: 3A DC
Specifications:
- Dynamic resistance: 30mΩ
- I2t value for fusing: 98 A²S
- Maximum peak reverse gate voltage: 5V
- Peak gate current: 4A
- Operating temperature range: -40°C to +125°C
- Storage temperature: -40°C to +150°C
Package:
- 1x TYN612 IC TYN612M Thyristor 12A 600V Unidirectional SCR Thyristor TO-220 Silicon Control Rectifier Transistor
- High Voltage & Current Handling: 100V Drain-Source voltage and 42A continuous drain current.
- Low Rds On for improved power efficiency.
- 160W Maximum Power Dissipation, ensuring stable performance under load.
- Gate-Source Voltage up to 20V for flexible control.
- Drain-Source Voltage (Vds): -55V
- Gate-Source Voltage (Vgs): ±20V
- Continuous Drain Current (Id): -74A
- Power Dissipation (Ptot): 200W
- PNP transistor with high current capacity
- Designed for switching and amplification in power applications
- High collector-to-emitter voltage
- Capable of handling pulse currents up to 13A
The D880 NPN Power Transistor is designed for audio amplification and switching applications. Key features include:
- Low-frequency power amplifier
- DC Current Gain (hFE): 60 to 300
- Continuous Collector Current (Ic): 3A
- Collector-Emitter Voltage (VCE): 60V
- Collector-Base Voltage (VCB): 60V
- Emitter-Base Voltage (VEB): 7V
- Available in TO-220 package
MJE340 NPN Power Transistor is ideal for high-voltage electronic circuits. Key features include:
- Type: n-p-n
- Collector-Emitter Voltage: 300 V
- Collector-Base Voltage: 300 V
- Emitter-Base Voltage: 5 V
- Collector Current: 0.5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 30 to 240
- Operating Temperature Range: -65 to +150 °C
- Package: TO-126
The 78L05 5V 100mA Positive Voltage Regulator is designed to provide a stable 5V output for small loads up to 100mA. Ideal for various power management applications, it features:
- 5V Positive Voltage Regulator
- Output Current up to 100mA
- Maximum Input Voltage of 30V
- Operating current (IQ) of 5mA
- Internal Thermal Overload and Short Circuit Protection
- Type: NPN Bipolar Junction Transistor (BJT)
- Collector-Emitter Voltage (Vceo): 80V
- Collector Current (Ic): 15A
- DC Current Gain (hFE): 80 - 320