The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.
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The FQA24N60 MOSFET is a high-efficiency N-channel metal oxide semiconductor designed for power switching applications. This component boasts a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, making it suitable for a wide range of high-power applications.
Featuring a maximum Rds On of 240 mOhm at 11.8A and 10V, the FQA24N60 ensures minimal power loss and efficient operation. Its gate threshold voltage (Vgs(th)) is 5V at 250µA, providing precise control in switching applications. The gate charge (Qg) is 145nC at 10V, while the input capacitance (Ciss) is 5500pF at 25V, contributing to the component's high performance and reliability.
The FQA24N60 MOSFET is designed for through hole mounting and comes in a TO-3P package, making it easy to integrate into various circuit designs. With a maximum power dissipation of 310W, this MOSFET can handle significant power loads, ensuring dependable performance in demanding environments. The operating junction temperature (Tj) can reach up to 150°C, ensuring robustness under high-temperature conditions.
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Frequently Asked Questions:
Q: What is the drain-to-source voltage (Vdss) of the FQA24N60 MOSFET?
A: The drain-to-source voltage is 600V.
Q: What is the continuous drain current (Id) of the FQA24N60 MOSFET?
A: The continuous drain current is 23.5A.
Q: What type of package does the FQA24N60 MOSFET come in?
A: It comes in a TO-3P package.
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