• Miniature Size for easy installation
• Low Holding Current Distribution for flexible design
• High Peak Reverse Blocking Voltage of 500V
• Peak On-State Current of 2A

C1971 RF/VHF/UHF TO-220 Mitsubishi Transistor

The C1971 RF/VHF/UHF TO-220 Transistor by Mitsubishi offers excellent performance for radio frequency applications across a wide frequency range, including VHF and UHF bands. Ideal for high-frequency electronic circuits.

• Manufacturer: Mitsubishi
• Type: NPN Transistor
• Package: TO-220
• Applications: RF, VHF, UHF

Package Includes: 1x C1971 RF/VHF/UHF TO-220 Mitsubishi Transistor

The BC547 is a versatile NPN transistor, widely used in electronic circuits for various applications. It features a TO-92 package and is known for its reliability and efficiency. Perfect for both amateur and professional use.

Key Features:

• Pinout Configuration:
  • Collector (C): Current flows in through the collector.
  • Base (B): Controls the biasing of the transistor.
  • Emitter (E): Current drains out through the emitter.
• DC Current Gain (h_FE): Max value of 800
• Continuous Collector Current (I_C): Up to 100mA
• Emitter-Base Voltage (V_BE): 6V
• Base Current (I_B): Max of 5mA

The IRF540 N Channel MOSFET is an ideal choice for high-power switching applications. Capable of handling over 33A and 100V, this MOSFET comes in a TO-220 package, which fits perfectly into breadboards and perfboards. With a very low Rds(on) down to 44 milliohm and a low threshold voltage of less than 2.5V, it can be directly controlled by a microcontroller running on 5V logic. Heat sinking is simple with the TO-220 package, but thanks to the low Rds(on), you can often manage without additional heat sinking for high loads.

Key Features:

• Handles over 33A and 100V
• TO-220 package for easy integration
• Very low Rds(on) down to 44 milliohm
• Low threshold voltage (Vgs) of less than 2.5V
• Directly controllable from 5V logic microcontrollers

✔ Avalanche Rugged Technology – Ensures high durability and reliability
✔ Rugged Gate Oxide Technology – Provides better gate protection
✔ Lower Input Capacitance – Reduces switching losses for efficiency
✔ Improved Gate Charge – Enhances performance in high-frequency applications

The IRF840 N-Channel MOSFET is a high-performance power MOSFET designed for efficient switching applications. With a high voltage rating and robust current handling capabilities, it is ideal for various power control circuits.

Key Features:

• Drain-Source Voltage (Vds): 500V
• Drain-Gate Voltage (Vdg): 500V
• Gate-Source Voltage (Vgs): 20V
• Drain Current (Id): 8.0A
• Power Dissipation (Ptot): 125W
• Type: N-Channel

• Pre-Amplifier: Low Level, Low Noise NPN Transistor
• Current Gain (hFE): 60 to 1000 (Good Linearity)
• Continuous Collector Current (IC): 100mA
• Collector-Emitter Voltage (VCEO): 45V

• Advanced HEXFET® Technology for high efficiency.
• Ultra-low on-resistance (Rds On) for minimal power loss.
• Fast switching speed, ideal for high-frequency applications.
• Dynamic dv/dt rating for improved performance.

• Type: PNP Bipolar Junction Transistor (BJT)
• High Voltage Handling: Up to -250V Collector-Emitter Voltage (Vce)
• Compact TO-92 Package: Easy to mount and use
• Low Power Consumption: Suitable for low-current applications

Discover the TOSHIBA TTC5200 TRANSISTOR, an NPN power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

• NPN power transistor for high-efficiency performance.
• Suitable for high-speed switching applications.
• Designed for use in audio and power amplification circuits.
• Maximum collector current rating of 1.5 A for handling larger loads.

C1972 RF TO-220 Mitsubishi Transistor

The C1972 RF TO-220 Transistor from Mitsubishi is a high-performance NPN transistor designed for RF applications. It features a TO-220 package and is ideal for use in various electronic circuits.

• Manufacturer: Mitsubishi
• Type: NPN Transistor
• Package: TO-220
• Application: RF

Package Includes: 1x C1972 RF TO-220 Mitsubishi Transistor

The C1815 NPN General Purpose Transistor is a versatile component designed for various electronic applications. Key features include:

• Collector-Emitter Voltage (V_ceo): 50V
• Collector-Base Voltage (V_cbo): 60V
• Collector Current (I_c): 0.15A
• h_fe: 70-700 @ 2mA
• Power Dissipation (P_tot): 400mW
• Current-Gain-Bandwidth (f_total): 80MHz
• Type: NPN

The 78L09 Positive Voltage Regulator in a TO-92 package is designed for a wide range of applications. This regulator provides a fixed output voltage of +9V and can deliver up to 100mA of current. It features internal thermal overload protection, short-circuit current limiting, and output transistor safe-area compensation, ensuring reliable performance without external components.

Key Features:

• Output Voltage Range: +9V
• Output current up to 100mA
• No external components required
• Internal thermal overload protection
• Internal short-circuit current limiting
• Output transistor safe-area compensation
• Output voltage offered in 4% tolerance

Specifications:

• Type: NPN Bipolar Junction Transistor
• Collector Current: 150mA (Max)
• Voltage Ratings:
  • Collector-Emitter: 50V
  • Collector-Base: 60V
  • Emitter-Base: 5V
• Power Dissipation: 400mW
• Frequency: 200MHz
• Gain: 70 to 700
• Package: TO-92

Package:

• 1 x C945 Transistor (TO-92 Package)