Specifications:
- Type Designator: BFR91
- Material: Silicon (Si)
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.18 W
- Maximum Collector-Base Voltage (Vcb): 15 V
- Maximum Collector-Emitter Voltage (Vce): 12 V
- Maximum Emitter-Base Voltage (Veb): 2 V
- Maximum Collector Current (Ic max): 0.035 A
- Operating Junction Temperature (Tj): Up to 150°C
- Transition Frequency (ft): 3000 MHz
- Collector Capacitance (Cc): 1.2 pF
- Forward Current Transfer Ratio (hFE): Min 25
- Noise Figure: Not specified
- Package: TO51
Package:
- 1 x BFR91 Transistor (TO51 Package)
Description:
The BFR91 Transistor is an NPN high-frequency silicon transistor designed for RF and low-noise amplifier applications. With a 3000 MHz transition frequency, 1.2 pF collector capacitance, and the ability to operate at temperatures up to 150°C, it’s perfect for high-performance circuits. Its compact TO51 package ensures efficient space usage, making it a reliable choice for advanced electronic projects.
FAQ:
-
What type of transistor is the BFR91?
It’s an NPN silicon transistor designed for high-frequency applications.
-
What is the maximum voltage rating between the collector and emitter?
The maximum Vce rating is 12V.
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What is the transition frequency of this transistor?
It has a high transition frequency of 3000 MHz, ideal for RF circuits.
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What is the maximum collector current?
The maximum collector current is 0.035A (35mA).
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What type of package does the BFR91 come in?
It comes in a TO51 package, known for its compact and durable design.
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