• High Voltage Rating: Supports 400V, suitable for high-voltage applications.
• High Current Capacity: Can handle up to 5.5A, making it ideal for power control circuits.
• Fast Switching: Offers fast switching capabilities, reducing power loss and improving efficiency.
• Low Gate-Source Voltage: Operates efficiently at low gate-source voltages, providing better control.

• High Power NPN Transistor – Suitable for low-frequency applications
• Single Transistor Configuration – Easy to integrate into circuits
• Compact SOT-32-3 Package – Space-efficient and reliable
• Surface-Mount Technology (SMT/SMD) – Ensures secure placement on PCBs

• High Current Handling: Supports a continuous drain current of 49A at 25°C.
• High Voltage Tolerance: Maximum Drain-Source Voltage (VDS) of 55V.
• Fast Switching Speed:
  • Rise time: 60ns
  • Fall time: 45ns

The 20N60 IGBT is a high-performance insulated-gate bipolar transistor (IGBT) designed for efficient power switching applications. With a maximum collector-emitter voltage (VCE) of 600V and a continuous collector current (IC) of 20A, it ensures reliable performance. Available in PG-TO-220-3-1 and PG-TO-247-3 packages.

Key Features:

• Type: SGP20N60 and SGW20N60
• Collector-Emitter Voltage (VCE): 600V
• Continuous Collector Current (IC): 20A
• Saturation Voltage (VCE(sat)): 2.4V
• Maximum Junction Temperature (Tj): 150°C
• Marking: G20N60
• Package: PG-TO-220-3-1 and PG-TO-247-3

The C106D Thyristor is a high-performance component designed for efficient power switching applications. With a nominal current of 4A and a reverse voltage rating (URRM) of 600V, this thyristor ensures reliable performance. Perfect for through hole mounting with a TO-225AA package.

Key Features:

• Nominal Current: 4A
• Reverse Voltage Rating (URRM): 600V
• Mounting Form: TO-225AA

The 10N60 A CLASS High Quality IGBT Transistor is designed for efficient power control in various applications. Key features include:

• Collector-Emitter Voltage (V_ceo): 600V
• Collector Current (I_c): 10A
• Fast IGBT Technology
• NPT TECH for enhanced performance
• High Quality and reliability

The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.

Key Features:

• Part NO.: FQA24N60
• Package: TO-3P
• FET Type: MOSFET N-Channel, Metal Oxide
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 23.5A
• Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) @ Vgs: 145nC @ 10V
• Input Capacitance (Ciss) @ Vds: 5500pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Supplier: SICSTOCK

• Type: PNP
• Collector-Emitter Voltage: -80V
• Collector-Base Voltage: -80V
• Collector Current: -5A

The 78L05 5V 100mA Positive Voltage Regulator is designed to provide a stable 5V output for small loads up to 100mA. Ideal for various power management applications, it features:

• 5V Positive Voltage Regulator
• Output Current up to 100mA
• Maximum Input Voltage of 30V
• Operating current (IQ) of 5mA
• Internal Thermal Overload and Short Circuit Protection

• Programmable Zener diode
• Output voltage range: 2.5V to 36V
• Output current range: 1mA to 100mA (sink current)
• Output voltage tolerance: ±4%

Discover the TOSHIBA TTA1943 TRANSISTOR, a PNP power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

Specifications:

• Type: NPN Silicon High-Frequency Transistor
• Collector-Emitter Voltage (Vce): 15V
• Collector-Base Voltage (Vcb): 15V
• Emitter-Base Voltage (Veb): 2V
• Collector Current (Ic): 25mA
• Power Dissipation (Ptot): 300mW
• Transition Frequency (ft): 5GHz
• Package Type: TO-50
• Operating Temperature Range: -65°C to +150°C

Package:

1x BFR91A Transistor

The 78L09 Positive Voltage Regulator in a TO-92 package is designed for a wide range of applications. This regulator provides a fixed output voltage of +9V and can deliver up to 100mA of current. It features internal thermal overload protection, short-circuit current limiting, and output transistor safe-area compensation, ensuring reliable performance without external components.

Key Features:

• Output Voltage Range: +9V
• Output current up to 100mA
• No external components required
• Internal thermal overload protection
• Internal short-circuit current limiting
• Output transistor safe-area compensation
• Output voltage offered in 4% tolerance

• High power dissipation of 65 W, suitable for amplifiers and switching applications.
• Maximum collector current of 6 A, capable of handling high current loads.
• Wide operating junction temperature range from -65°C to +150°C.
• Reliable performance with a DC current gain of 30.

Key Features:

• Type: Thyristors - SCRs
• Off-State Voltage: 500V
• Gate Trigger Voltage (Max): 1.5V
• Gate Trigger Current (Max): 15mA
• On-State Voltage (Max): 1.75V
• On-State Current (AV) (Max): 7.5A
• On-State Current (RMS) (Max): 12A
• Hold Current (Max): 20mA
• Off-State Current (Max): 500µA
• Non-Repetitive Surge Current: 120A, 132A
• Operating Temperature: -40°C to 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Base Part Number: BT151

D400 NPN Silicon Transistor

The D400 NPN Silicon Transistor is a reliable and efficient transistor designed for a wide range of electronic applications. Featuring low power consumption and high performance, this transistor is perfect for enhancing the functionality of your electronic circuits. Key features include:

• Type: NPN Silicon Transistor
• Model: D400
• High performance and reliability
• Low power consumption
• Ideal for various electronic applications