The 78L05 5V 100mA Positive Voltage Regulator is designed to provide a stable 5V output for small loads up to 100mA. Ideal for various power management applications, it features:

• 5V Positive Voltage Regulator
• Output Current up to 100mA
• Maximum Input Voltage of 30V
• Operating current (IQ) of 5mA
• Internal Thermal Overload and Short Circuit Protection

Key Features:

• High-power audio amplifier IC
• Maximum output power: 32W
• Operating voltage: -25V to +25V
• Output: 28W with 4Ω speaker
• Short circuit and thermal protection
• Breadboard friendly

The 16TTS12 Thyristors are designed for high-performance applications, providing a robust and reliable solution for your electronic needs. These thyristors feature:

• Average Current (IT(AV)): 10 A
• Repetitive Peak Off-State Voltage (VDRM/VRRM): 800V, 1200V
• On-State Voltage (VTM): 1.4 V
• Gate Trigger Current (IGT): 60 mA
• Operating Junction Temperature (TJ): -40°C to 125°C
• Circuit Configuration: Single SCR

Perfect for use in circuits that require precise and reliable switching capabilities.

• Type: NPN Bipolar Junction Transistor (BJT)
• Collector-Emitter Voltage (Vceo): 80V
• Collector Current (Ic): 15A
• DC Current Gain (hFE): 80 - 320

The 2N3904 is an NPN general purpose transistor designed for various electronic applications. With a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V, it offers reliable performance. This transistor is ideal for through hole mounting.

Key Features:

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole

Discover the TOSHIBA TTC5200 TRANSISTOR, an NPN power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

• Original Japanese Quality: 100% authentic TOSHIBA A1941 transistor.
• High Power Output: Perfect for high-power audio amplification and switching.
• Low Distortion: Ensures clear and accurate audio signal transmission.

Specifications:

• Type: PNP
• Collector-Emitter Voltage: -60V
• Collector-Base Voltage: -60V
• Emitter-Base Voltage: -5V
• Collector Current: -3A
• Collector Dissipation: 40W
• DC Current Gain (hfe): 10 to 50
• Transition Frequency: 3 MHz
• Operating Temperature: -65 to +150°C
• Storage Temperature: -65 to +150°C
• Package: TO-220

Package:

• 1 x TIP32C Bipolar Transistor

• Advanced HEXFET® Technology for high efficiency.
• Ultra-low on-resistance (Rds On) for minimal power loss.
• Fast switching speed, ideal for high-frequency applications.
• Dynamic dv/dt rating for improved performance.

The MD1802 High Voltage NPN Power Transistor is designed for enhanced performance in high voltage applications. Key features include:

• Collector-Emitter Voltage (V_ce): 80V
• Collector-Base Voltage (V_cb): 80V
• Emitter-Base Voltage (V_eb): 5V
• Collector Current (I_c): 3A
• Power Dissipation (P_tot): 1.5W
• DC Current Gain (h_FE): 100-300
• Transition Frequency (f_t): 150MHz
• Package: TO-92

• Low voltage, high current PNP transistor.
• High current gain (hFE: 85 to 300).
• Suitable for Class B push-pull transistor configurations.
• Compact TO-92 package for easy integration.

The LM336 Voltage Reference Diode is essential for precision voltage regulation in various electronic applications. It ensures stable and reliable performance. Key features include:

• Adjustable voltage reference
• High accuracy and stability
• Low temperature coefficient
• Ideal for analog and digital circuits

MJE15032G - Bipolar (BJT) Single Transistor

The MJE15032G is a high-performance NPN Bipolar Power Transistor designed for a variety of applications, including automotive. With high collector emitter voltage and power dissipation, it is ideal for demanding tasks.

• Transistor Polarity: NPN
• Collector Emitter Voltage (V_ceo): 250V
• Transition Frequency (f_t): 30MHz
• Power Dissipation (P_d): 50W
• DC Collector Current: 8A
• DC Current Gain (h_FE): 70
• Transistor Case Style: TO-220
• No. of Pins: 3
• Operating Temperature Max: 150°C
• Product Range: MJxxxx Series
• Automotive Qualification Standard

The MD1803DFX High Voltage NPN Power Transistor is designed for enhanced performance in high voltage applications. Key features include:

• Collector-Emitter Voltage (V_ce): 80V
• Collector-Base Voltage (V_cb): 80V
• Emitter-Base Voltage (V_eb): 5V
• Collector Current (I_c): 3A
• Power Dissipation (P_tot): 1.5W
• DC Current Gain (h_FE): 100-300
• Transition Frequency (f_t): 150MHz
• Package: TO-92

• High power handling with 80A continuous drain current and 100V drain-to-source voltage.
• Low Rds On (15mΩ @ 40A, 10V) for minimal conduction losses.
• Wide gate drive voltage range with ±20V max Vgs.
• High efficiency due to low gate charge (182 nC @ 10V).

BC848 SMD General Purpose NPN Transistor

The BC848 SMD is a versatile NPN transistor designed for general-purpose applications. This SMD plastic package component operates efficiently across a wide temperature range, making it suitable for various switching and amplification tasks.

• General Purpose NPN Transistor
• Maximum Collector-Emitter Voltage: 30V
• Maximum Collector Current: 100mA
• Total Power Dissipation: 250mW
• Minimum DC Current Gain: 200