Enhance your electronic circuits with the Bangladesh C2073 NPN Power Transistor. This high-performance transistor is perfect for applications requiring reliable and efficient power dissipation and voltage regulation.

• Type Designator: 2SC2073
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector Power Dissipation: 25W
• Maximum Collector-Base Voltage: 150V
• Maximum Collector-Emitter Voltage: 150V
• Maximum Emitter-Base Voltage: 5V
• Maximum Collector Current: 1.5A
• Maximum Temperature: 150°C
• Transition Frequency: 1MHz
• Collector Capacitance: 70pF
• Forward Current Transfer Ratio (hFE): Min 40
• Package: TO220

The D880 NPN Power Transistor is designed for audio amplification and switching applications. Key features include:

• Low-frequency power amplifier
• DC Current Gain (hFE): 60 to 300
• Continuous Collector Current (I_c): 3A
• Collector-Emitter Voltage (V_CE): 60V
• Collector-Base Voltage (V_CB): 60V
• Emitter-Base Voltage (V_EB): 7V
• Available in TO-220 package

The 16TTS12 Thyristors are designed for high-performance applications, providing a robust and reliable solution for your electronic needs. These thyristors feature:

• Average Current (IT(AV)): 10 A
• Repetitive Peak Off-State Voltage (VDRM/VRRM): 800V, 1200V
• On-State Voltage (VTM): 1.4 V
• Gate Trigger Current (IGT): 60 mA
• Operating Junction Temperature (TJ): -40°C to 125°C
• Circuit Configuration: Single SCR

Perfect for use in circuits that require precise and reliable switching capabilities.

• Type: NPN Bipolar Junction Transistor (BJT)
• Collector-Emitter Voltage (Vceo): 45V
• Collector-Base Voltage (Vcb): 50V
• Emitter-Base Voltage (Vbe): 6V

• Type: PNP High-Voltage Transistor
• Collector-Base Voltage: 160V
• Collector-Emitter Voltage: 150V
• Emitter-Base Voltage: 5V

MJE15033G - Bipolar (BJT) Single Transistor

The MJE15033G is a high-performance PNP Bipolar Power Transistor designed for a variety of applications, including automotive. It offers a high collector emitter voltage and power dissipation, making it an excellent choice for demanding tasks.

• Transistor Polarity: PNP
• Collector Emitter Voltage (V_ceo): -250V
• Transition Frequency (f_t): 30MHz
• Power Dissipation (P_d): 50W
• DC Collector Current: -8A
• DC Current Gain (h_FE): 30
• Transistor Case Style: TO-220
• No. of Pins: 3
• Operating Temperature Max: 150°C
• Product Range: MJxxxx Series
• Automotive Qualification Standard

• Original Japanese Quality: 100% authentic TOSHIBA A1941 transistor.
• High Power Output: Perfect for high-power audio amplification and switching.
• Low Distortion: Ensures clear and accurate audio signal transmission.

2SC3858 High-Power NPN Transistors are designed for high-performance electronic applications. These transistors offer:

• Type: NPN
• Collector-Emitter Voltage: 200 V
• Collector-Base Voltage: 200 V
• Emitter-Base Voltage: 6 V
• Collector Current: 17 A
• Collector Dissipation: 200 W
• DC Current Gain (hfe): 50 to 180
• Transition Frequency: 20 MHz
• Operating Temperature Range: -55 to +150 °C
• Package: MT-200

The 2N3055 NPN Power Transistor is a robust component designed for high-power applications. With a maximum collector current of 15A and a collector-emitter breakdown voltage of 60V, it ensures reliable performance. This transistor is ideal for chassis mounting and comes in a TO-3 package.

Key Features:

• Part NO.: 2N3055
• Package: TO-3
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
• Current - Collector Cutoff (Max): 700µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
• Power - Max: 115W
• Mounting Type: Chassis Mount
• Supplier Device Package: TO-3

Supplier: SICSTOCK

• Collector-Emitter Voltage (Vceo): 100V
• Collector-Base Voltage (Vcbo): 100V
• Collector Current (Ic): 25.0A
• hfe: 15-75 @ 3000mA

• Compact TO92 package for easy circuit integration.
• Suitable for low-power amplification and switching applications.
• Handles up to 200mA collector current.
• High temperature resistance up to 125°C.

The LM336 Voltage Reference Diode is essential for precision voltage regulation in various electronic applications. It ensures stable and reliable performance. Key features include:

• Adjustable voltage reference
• High accuracy and stability
• Low temperature coefficient
• Ideal for analog and digital circuits

• High continuous drain current of up to 35A.
• Handles pulsed drain currents up to 50A.
• Robust drain-to-source breakdown voltage of 60V.
• Low drain-source resistance (0.018 Ohms) for minimal power loss.

• Transistor Type: PNP
• Maximum Collector Current (Ic): 500 mA
• Maximum Collector-Emitter Breakdown Voltage: 300 V
• Maximum Collector Cutoff Current (ICBO): 100µA
• DC Current Gain (hFE) @ Ic, Vce: Minimum 30 @ 50mA, 10V

• Ultra-soft with slight stickiness for easy handling.
• Good thermal conductivity for effective heat management.
• Feels like plasticine but has a degree of plasticity.
• Ideal for use with CPU, GPU, VGA cards, and IC components.

The MD1802 High Voltage NPN Power Transistor is designed for enhanced performance in high voltage applications. Key features include:

• Collector-Emitter Voltage (V_ce): 80V
• Collector-Base Voltage (V_cb): 80V
• Emitter-Base Voltage (V_eb): 5V
• Collector Current (I_c): 3A
• Power Dissipation (P_tot): 1.5W
• DC Current Gain (h_FE): 100-300
• Transition Frequency (f_t): 150MHz
• Package: TO-92