• Darlington Medium-power NPN Transistor
• High DC Current Gain (hFE), typically 1000
• Continuous Collector Current (IC): 5A
• Collector-Emitter Voltage (VCE): 100V

• High voltage NPN transistor with 160V rating
• Maximum collector current of 1A
• Power dissipation up to 900mW
• Compact TO-92 package for versatile use

2SC3858 High-Power NPN Transistors are designed for high-performance electronic applications. These transistors offer:

• Type: NPN
• Collector-Emitter Voltage: 200 V
• Collector-Base Voltage: 200 V
• Emitter-Base Voltage: 6 V
• Collector Current: 17 A
• Collector Dissipation: 200 W
• DC Current Gain (hfe): 50 to 180
• Transition Frequency: 20 MHz
• Operating Temperature Range: -55 to +150 °C
• Package: MT-200

The 18N50 N-Channel Power MOSFET is designed for high-efficiency power switching applications. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 18A, it offers reliable performance. Ideal for various demanding electronic circuits.

Key Features:

• Drain to Source Voltage (Vdss): 500V
• Continuous Drain Current (Id): 18A
• High Efficiency and Performance
• N-Channel MOSFET

• High Power Dissipation: Max 300 W
• High Drain-Source Voltage: 500 V
• Maximum Drain Current: 21 A
• Low On-State Resistance: 0.25 Ohm

C1971 RF/VHF/UHF TO-220 Mitsubishi Transistor

The C1971 RF/VHF/UHF TO-220 Transistor by Mitsubishi offers excellent performance for radio frequency applications across a wide frequency range, including VHF and UHF bands. Ideal for high-frequency electronic circuits.

• Manufacturer: Mitsubishi
• Type: NPN Transistor
• Package: TO-220
• Applications: RF, VHF, UHF

Package Includes: 1x C1971 RF/VHF/UHF TO-220 Mitsubishi Transistor

The NPN Transistor 25V 0.2A - BC109 offers reliable performance for various electronic applications. With a collector-emitter voltage of 25V and a transition frequency of 150MHz, it's ideal for general-purpose switching and amplification.

The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.

Key Features:

• Part NO.: FQA24N60
• Package: TO-3P
• FET Type: MOSFET N-Channel, Metal Oxide
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 23.5A
• Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) @ Vgs: 145nC @ 10V
• Input Capacitance (Ciss) @ Vds: 5500pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Supplier: SICSTOCK

A1015 Bipolar Transistor – PNP Type

The A1015 is a reliable PNP bipolar transistor, ideal for audio frequency amplifier applications and switching purposes. Key features include:

• Type: PNP
• Collector-Emitter Voltage: -50V
• Collector-Base Voltage: -50V
• Emitter-Base Voltage: -5V
• Collector Current: -0.15A
• Collector Dissipation: 0.4W
• DC Current Gain (hFE): 70 to 400
• Transition Frequency: 80MHz
• Operating and Storage Junction Temperature Range: -55°C to +125°C
• Package: TO-92

2SA1494 Transistors - Bipolar (BJT) - Single

The 2SA1494 is a high-performance PNP Bipolar Power Transistor designed for a variety of applications, including audio and general-purpose use. It offers high collector current and power dissipation, making it an excellent choice for demanding tasks.

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 17A
• Collector Emitter Voltage (V_ceo): 200V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
• Collector Cutoff Current (Max): 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8A, 4V
• Power Dissipation (P_d): 200W
• Transition Frequency (f_t): 20MHz
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: MT-200

• N-Channel Power MOSFET
• High continuous drain current capacity (9.2A)
• Low drain to source resistance (0.27 Ohms)
• Fast rise time and fall time (30nS and 20nS respectively)

Specifications:

• Dynamic resistance: 30mΩ
• I2t value for fusing: 98 A²S
• Maximum peak reverse gate voltage: 5V
• Peak gate current: 4A
• Operating temperature range: -40°C to +125°C
• Storage temperature: -40°C to +150°C

Package:

• 1x TYN612 IC TYN612M Thyristor 12A 600V Unidirectional SCR Thyristor TO-220 Silicon Control Rectifier Transistor

• NPN transistor for medium-frequency applications
• High current gain
• Suitable for amplification in audio and RF circuits
• Low noise operation

• High power dissipation of 186W for efficient operation.
• Wide operating temperature range from -55°C to +150°C.
• Continuous collector current up to 30A for high-performance applications.
• Compact dimensions for space-saving designs.

• High Current Handling: Supports a continuous drain current of 49A at 25°C.
• High Voltage Tolerance: Maximum Drain-Source Voltage (VDS) of 55V.
• Fast Switching Speed:
  • Rise time: 60ns
  • Fall time: 45ns

• Medium power transistor with hfe gain up to 50
• Improved linearity of hfe gain
• Maximum voltage across collector and emitter: 100V
• Maximum current allowed through collector: 3A DC