Introducing the BU806 NPN Transistor, a high-performance silicon transistor designed for a wide range of electronic applications. It boasts impressive specifications, including a maximum collector power dissipation of 60W and a maximum collector-emitter voltage of 200V. Key features include:

• Type Designator: BU806
• Material of Transistor: Si (Silicon)
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 60 W
• Maximum Collector-Base Voltage (Vcb): 400 V
• Maximum Collector-Emitter Voltage (Vce): 200 V
• Maximum Emitter-Base Voltage (Veb): 5 V
• Maximum Collector Current (Ic max): 8 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Forward Current Transfer Ratio (hFE), MIN: 100
• Package: TO220

• NPN Transistor: Ideal for low to medium power amplification.
• High Current Handling: Capable of handling up to 500mA of collector current.
• Wide Voltage Range: Operates within a collector-emitter voltage of up to 40V.
• High Gain: Offers a current gain range of 20 – 300.

• Package Type: TO-220
• Transistor Type: NPN
• Max Collector Current (IC): 6A (6000mA)
• Max Collector-Emitter Voltage (VCE): 100V

MJE15032G - Bipolar (BJT) Single Transistor

The MJE15032G is a high-performance NPN Bipolar Power Transistor designed for a variety of applications, including automotive. With high collector emitter voltage and power dissipation, it is ideal for demanding tasks.

• Transistor Polarity: NPN
• Collector Emitter Voltage (V_ceo): 250V
• Transition Frequency (f_t): 30MHz
• Power Dissipation (P_d): 50W
• DC Collector Current: 8A
• DC Current Gain (h_FE): 70
• Transistor Case Style: TO-220
• No. of Pins: 3
• Operating Temperature Max: 150°C
• Product Range: MJxxxx Series
• Automotive Qualification Standard

• High power dissipation of 65 W, suitable for amplifiers and switching applications.
• Maximum collector current of 6 A, capable of handling high current loads.
• Wide operating junction temperature range from -65°C to +150°C.
• Reliable performance with a DC current gain of 30.

BD136 PNP Power Transistor

The BD136 is a versatile PNP power transistor, ideal for switching and amplification circuits. Key features include:

• Plastic casing PNP Transistor
• High DC Current Gain (hFE), typically 80 at IC=10mA
• Continuous Collector current (IC) of 1.5A
• Collector-Emitter voltage (VCE) of 45V
• Collector-Base voltage (VCB) of 45V
• Emitter Base Breakdown Voltage (VBE) of 5V
• DC current gain (hFE) of 40 to 250
• Available in TO-225 package

The 10N60C N-Channel MOSFET is a high-efficiency power transistor designed for demanding applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A, it ensures reliable performance. This MOSFET features a TO-220F package for through hole mounting.

Key Features:

• Part NO.: AOTF10N60
• Package: TO-220F
• FET Type: MOSFET N-Channel, Metal Oxide
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10A
• Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) @ Vds: 1600pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Supplier: SICSTOCK

The BS170 N-Channel MOSFET Transistor is a Pb-free device designed for low voltage and current applications. It boasts low offset and error voltage, high saturation current capability, and fast switching (TON = 4ns). Easily driven without a buffer, this MOSFET transistor ensures rugged and reliable performance.

Key Features:

• Pb-Free device
• Low offset and error voltage
• Easily driven without buffer
• High density cell design to minimize ON-state resistance RDS(ON)
• Voltage controlled small signal switch
• Particularly suitable for low voltage, low current application
• High saturation current capability
• Rugged and Reliable
• Fast switching (TON = 4ns)

The 2N3904 is an NPN general purpose transistor designed for various electronic applications. With a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V, it offers reliable performance. This transistor is ideal for through hole mounting.

Key Features:

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole

The BTA41 40A 600V TRIAC is a robust component designed for high-power switching applications. With a rated average on-state current of 40A and a repetitive peak reverse voltage of 600V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TOP3 package.

Key Features:

• Rated Average On-State Current: 40A
• Mounting Type: Through Hole
• Package Type: TOP3
• Maximum Gate Trigger Current: 100mA
• Repetitive Peak Reverse Voltage: 600V
• Surge Current Rating: 420A
• Pin Count: 3
• Maximum Gate Trigger Voltage: 1.3V
• Repetitive Peak Forward Blocking Voltage: 600V
• Maximum Holding Current: 80mA
• Repetitive Peak Off-State Current: 0.005mA
• Maximum Operating Temperature: +125°C
• Minimum Operating Temperature: -40°C
• Peak On-State Voltage: 1.55V

Package includes: 1x BTA41-600B

The MD1802 High Voltage NPN Power Transistor is designed for enhanced performance in high voltage applications. Key features include:

• Collector-Emitter Voltage (V_ce): 80V
• Collector-Base Voltage (V_cb): 80V
• Emitter-Base Voltage (V_eb): 5V
• Collector Current (I_c): 3A
• Power Dissipation (P_tot): 1.5W
• DC Current Gain (h_FE): 100-300
• Transition Frequency (f_t): 150MHz
• Package: TO-92

The MJE3055 and MJE2955 Power Transistors are designed for general-purpose switching and amplifier applications. These transistors ensure reliable performance and are ideal for various industrial and electronic projects in Bangladesh.

Key Features:

• DC current gain specified to 10 amperes
• High current gain with f_T = 2.0 MHz (Min) at I_C = 500 mAdc
• Durable and reliable construction
• Suitable for various switching and amplification tasks
• Easy to install and use in different circuits

MJE2955 - High Performance PNP Power Transistor

Discover the robust performance of the MJE2955 PNP Power Transistor, designed for high power applications with a collector-emitter voltage of -60V and a collector current of -10A. Featuring a DC current gain (hFE) of 20 to 70 and a power dissipation of 75W, this transistor is ideal for a variety of electronic circuits.

• Collector-Emitter Voltage (VCEO): -60V
• Collector Current (Ic): -10A
• DC Current Gain (hFE): 20 to 70
• Power Dissipation (PD): 75W

The Toshiba A1962 Transistor is a high-performance component designed for various electronic applications. It offers reliable performance and efficiency for your projects. Key features include:

• High current capacity
• Low saturation voltage
• Compact and durable design
• Ideal for power amplification and switching

The Radiolink AT9S Pro Remote Control is a versatile transmitter and receiver designed for RC models, including airplanes, helicopters, drones, and more. With 10/12 channels and long-range control, it ensures stable and reliable performance for all your RC adventures.

Key Features:

• 10/12 Channels
• Long-range control up to 2.1 miles (3.4km)
• Supports multiple models (airplanes, helicopters, drones, cars, boats, etc.)
• Real-time telemetry information
• Signal strength indicator (RSSI) alerts
• Low voltage alarm
• Fail-safe protection
• 2.8-inch LCD screen with DD sounds and vibration alerts

• High Power Handling: Suitable for power-intensive applications
• Low-Frequency Performance: Optimized for low-frequency circuits
• Durable Silicon Material: Ensures stability and longevity
• Power Diode Capability: Functions efficiently as a power tube