• Low voltage, high current PNP transistor.
• High current gain (hFE: 85 to 300).
• Suitable for Class B push-pull transistor configurations.
• Compact TO-92 package for easy integration.

Introducing the BU807 NPN Transistor, a high-efficiency silicon transistor ideal for various electronic applications. It features a maximum collector-emitter voltage of 150V and a high current capacity of 8A, making it suitable for demanding tasks. Key features include:

• Transistor Polarity: NPN
• Collector-Emitter Voltage (Vceo): 150V
• Minimum Base Current (Ib): 2A
• Maximum Collector Current (Ic): 8A
• Total Dissipation at Tc≤25°C: 60W
• Package / Case: TO220

• Collector-Emitter Voltage (Vceo): 100V
• Collector-Base Voltage (Vcbo): 100V
• Collector Current (Ic): 25.0A
• hfe: 15-75 @ 3000mA

The IRF9540 P-Channel MOSFET Transistor is designed for high voltage applications, offering robust performance and reliability. Key features include:

• Drain-Source Voltage (V_ds): -100V
• Gate-Source Voltage (V_gs): 20V
• Drain Current (I_d): -23A
• Power Dissipation (P_tot): 140W
• Type: P-Channel

• Programmable Zener diode
• Output voltage range: 2.5V to 36V
• Output current range: 1mA to 100mA (sink current)
• Output voltage tolerance: ±4%

BC848 SMD General Purpose NPN Transistor

The BC848 SMD is a versatile NPN transistor designed for general-purpose applications. This SMD plastic package component operates efficiently across a wide temperature range, making it suitable for various switching and amplification tasks.

• General Purpose NPN Transistor
• Maximum Collector-Emitter Voltage: 30V
• Maximum Collector Current: 100mA
• Total Power Dissipation: 250mW
• Minimum DC Current Gain: 200

The BT134 600V 4A TRIAC is a high-performance bi-directional thyristor designed for efficient power control in various applications. With a reverse peak voltage of 600V and a rating forward current of 4A, it ensures reliable performance. This TRIAC is ideal for through hole mounting.

Key Features:

• Reverse Peak Voltage: 600V
• Rating Forward Current: 4A
• Static Surge Current: 40A
• Terminal Number: 3
• Terminal Pitch: 2mm (0.08")
• Terminal Size: 16 x 1mm (0.63" x 0.04")
• Total Length: 30mm (1.2")
• Body Dimensions: 11 x 7.5 x 2.5mm (0.43" x 0.3" x 0.1")

Package Content: 1x Triacs

The 78L05 5V 100mA Positive Voltage Regulator is designed to provide a stable 5V output for small loads up to 100mA. Ideal for various power management applications, it features:

• 5V Positive Voltage Regulator
• Output Current up to 100mA
• Maximum Input Voltage of 30V
• Operating current (IQ) of 5mA
• Internal Thermal Overload and Short Circuit Protection

The 16TTS12 Thyristors are designed for high-performance applications, providing a robust and reliable solution for your electronic needs. These thyristors feature:

• Average Current (IT(AV)): 10 A
• Repetitive Peak Off-State Voltage (VDRM/VRRM): 800V, 1200V
• On-State Voltage (VTM): 1.4 V
• Gate Trigger Current (IGT): 60 mA
• Operating Junction Temperature (TJ): -40°C to 125°C
• Circuit Configuration: Single SCR

Perfect for use in circuits that require precise and reliable switching capabilities.

The 2N3055 NPN Power Transistor is a robust component designed for high-power applications. With a maximum collector current of 15A and a collector-emitter breakdown voltage of 60V, it ensures reliable performance. This transistor is ideal for chassis mounting and comes in a TO-3 package.

Key Features:

• Part NO.: 2N3055
• Package: TO-3
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
• Current - Collector Cutoff (Max): 700µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
• Power - Max: 115W
• Mounting Type: Chassis Mount
• Supplier Device Package: TO-3

Supplier: SICSTOCK

• High current capacity, capable of continuous drain current of 130-210A
• Supports a drain-to-source voltage of 60V
• Avalanche energy rating of 800 mJ for reliable performance under high-stress conditions
• Junction and storage temperature range from -55 to 175°C

The MJE3055 and MJE2955 Power Transistors are designed for general-purpose switching and amplifier applications. These transistors ensure reliable performance and are ideal for various industrial and electronic projects in Bangladesh.

Key Features:

• DC current gain specified to 10 amperes
• High current gain with f_T = 2.0 MHz (Min) at I_C = 500 mAdc
• Durable and reliable construction
• Suitable for various switching and amplification tasks
• Easy to install and use in different circuits

• Op-amp coupled with MOSFET at the output.
• Wide power supply range for flexibility.
• Single supply operation (5V to 16V) or dual supply operation (±2.5V to ±8V).
• High output voltage capability (maximum 13.3V).

The IRF840 N-Channel MOSFET is a high-performance power MOSFET designed for efficient switching applications. With a high voltage rating and robust current handling capabilities, it is ideal for various power control circuits.

Key Features:

• Drain-Source Voltage (Vds): 500V
• Drain-Gate Voltage (Vdg): 500V
• Gate-Source Voltage (Vgs): 20V
• Drain Current (Id): 8.0A
• Power Dissipation (Ptot): 125W
• Type: N-Channel

BC548 NPN General Purpose Transistor

The BC548 is a versatile NPN general-purpose transistor, ideal for a wide range of applications such as relay drivers, LED drivers, and amplifier modules. Key features include:

• Bi-Polar NPN Transistor
• DC Current Gain (hFE) up to 800
• Continuous Collector current (IC) of 500mA
• Emitter Base Voltage (VBE) of 5V
• Base Current (IB) up to 5mA
• Available in TO-92 package

The LM336 Voltage Reference Diode is essential for precision voltage regulation in various electronic applications. It ensures stable and reliable performance. Key features include:

• Adjustable voltage reference
• High accuracy and stability
• Low temperature coefficient
• Ideal for analog and digital circuits