• Darlington Medium-power NPN Transistor
• High DC Current Gain (hFE), typically 1000
• Continuous Collector Current (IC): 5A
• Collector-Emitter Voltage (VCE): 100V

The NPN Transistor 25V 0.2A - BC109 offers reliable performance for various electronic applications. With a collector-emitter voltage of 25V and a transition frequency of 150MHz, it's ideal for general-purpose switching and amplification.

C3355 NPN RF Transistor

The C3355 is a high-performance NPN RF transistor, designed for various radio frequency applications. Key features include:

• Type Designator: 2SC3355
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 0.6W
• Maximum Collector-Base Voltage (Vcb): 20V
• Maximum Collector Current (Ic max): 0.1A
• Maximum Operating Junction Temperature (Tj): 125°C
• Transition Frequency (ft): 6500MHz
• Forward Current Transfer Ratio (hFE), MIN: 35
• Package: TO-92

The MJE3055 and MJE2955 Power Transistors are designed for general-purpose switching and amplifier applications. These transistors ensure reliable performance and are ideal for various industrial and electronic projects in Bangladesh.

Key Features:

• DC current gain specified to 10 amperes
• High current gain with f_T = 2.0 MHz (Min) at I_C = 500 mAdc
• Durable and reliable construction
• Suitable for various switching and amplification tasks
• Easy to install and use in different circuits

• Low saturation voltage
• Simple drive requirements
• High safe operating area
• For low distortion complementary designs

Specifications:

• Dynamic resistance: 30mΩ
• I2t value for fusing: 98 A²S
• Maximum peak reverse gate voltage: 5V
• Peak gate current: 4A
• Operating temperature range: -40°C to +125°C
• Storage temperature: -40°C to +150°C

Package:

• 1x TYN612 IC TYN612M Thyristor 12A 600V Unidirectional SCR Thyristor TO-220 Silicon Control Rectifier Transistor

The BT136 4A 500V TRIAC is a versatile component designed for efficient power switching applications. With a maximum on-state current of 4A and a repetitive peak off-state voltage of 500V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220B package.

Key Features:

• Product Type: TRIAC SCR
• IC Number: BT136
• Number of Pins: 3
• Package Type: TO-220B

Package contains: 1 x BT136 IC

• High current capacity for power applications
• Designed for switching and amplification
• Low saturation voltage
• Robust construction for reliable performance

Discover the TOSHIBA TTA1943 TRANSISTOR, a PNP power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

• Drain-Source Voltage (Vds): -55V
• Gate-Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id): -74A
• Power Dissipation (Ptot): 200W

The 2N3904 is an NPN general purpose transistor designed for various electronic applications. With a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V, it offers reliable performance. This transistor is ideal for through hole mounting.

Key Features:

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole

BD136 PNP Power Transistor

The BD136 is a versatile PNP power transistor, ideal for switching and amplification circuits. Key features include:

• Plastic casing PNP Transistor
• High DC Current Gain (hFE), typically 80 at IC=10mA
• Continuous Collector current (IC) of 1.5A
• Collector-Emitter voltage (VCE) of 45V
• Collector-Base voltage (VCB) of 45V
• Emitter Base Breakdown Voltage (VBE) of 5V
• DC current gain (hFE) of 40 to 250
• Available in TO-225 package

• High power handling with 80A continuous drain current and 100V drain-to-source voltage.
• Low Rds On (15mΩ @ 40A, 10V) for minimal conduction losses.
• Wide gate drive voltage range with ±20V max Vgs.
• High efficiency due to low gate charge (182 nC @ 10V).

• NPN power transistor for high-efficiency performance.
• Suitable for high-speed switching applications.
• Designed for use in audio and power amplification circuits.
• Maximum collector current rating of 1.5 A for handling larger loads.

MJ15024G - Bipolar (BJT) Single Transistor, Audio, NPN

The MJ15024G is a high-performance Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners, and other linear applications. With a high DC current gain and a broad safe operating area, it ensures reliable performance.

• High DC current gain
• High safe operating area
• Collector-base voltage (Vcbo = 400V)
• Emitter-base voltage (Vebo = 5V)

The MD1803DFX High Voltage NPN Power Transistor is designed for enhanced performance in high voltage applications. Key features include:

• Collector-Emitter Voltage (V_ce): 80V
• Collector-Base Voltage (V_cb): 80V
• Emitter-Base Voltage (V_eb): 5V
• Collector Current (I_c): 3A
• Power Dissipation (P_tot): 1.5W
• DC Current Gain (h_FE): 100-300
• Transition Frequency (f_t): 150MHz
• Package: TO-92