Availability:
10000 In Stock
- Transistor Type: NPN
- Max Collector Current (IC): 5A
- Max Collector-Emitter Voltage (VCE): 20V
- Max Collector-Base Voltage (VCB): 40V
2SB337 Silicon PNP Power Transistors
- Write a review
Model: 0738
৳214.00
No tax
Get reliable power performance with our High-Performance 2SB337 Silicon PNP Power Transistors. Designed for various electronic applications, these transistors provide excellent efficiency and durability.
- Type Designator: 2SB337
- Material: Ge (Germanium)
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 12 W
- Maximum Collector-Base Voltage (Vcb): 40 V
- Maximum Collector-Emitter Voltage (Vce): 30 V
- Maximum Emitter-Base Voltage (Veb): 1 V
- Maximum Collector Current (Ic max): 7 A
- Max. Operating Junction Temperature (Tj): 90 °C
- Transition Frequency (ft): 0.125 MHz
- Forward Current Transfer Ratio (hFE), MIN: 50
- Noise Figure: -
- Package: TO3
Safe Shopping
Data Protection.
Fast Delivery
Delivery all over Bangladesh.
Guarantee safe & secure checkout
Our High-Performance 2SB337 Silicon PNP Power Transistors are engineered for efficiency and durability in a wide range of electronic applications. With robust construction and reliable performance, these transistors are an essential component for your electronics toolkit.
Product Details
- Type Designator: 2SB337
- Material: Ge (Germanium)
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 12 W
- Maximum Collector-Base Voltage (Vcb): 40 V
- Maximum Collector-Emitter Voltage (Vce): 30 V
- Maximum Emitter-Base Voltage (Veb): 1 V
- Maximum Collector Current (Ic max): 7 A
- Max. Operating Junction Temperature (Tj): 90 °C
- Transition Frequency (ft): 0.125 MHz
- Forward Current Transfer Ratio (hFE), MIN: 50
- Noise Figure: -
- Package: TO3
Use of the Product
These power transistors are suitable for various electronic applications requiring high performance and reliability. Ideal for use in amplifiers, switching circuits, and power management systems, they ensure efficient power handling and consistent operation.
Benefit of the Product
Using our 2SB337 silicon PNP power transistors provides exceptional performance in electronic circuits, offering high collector power dissipation and reliable voltage ratings. Their robust design and high efficiency ensure long-lasting durability, making them a valuable addition to your electronic components.
Frequently Asked Questions
Q: What is the maximum collector power dissipation of these transistors?
A: The maximum collector power dissipation (Pc) is 12 W.
Q: What is the maximum collector-emitter voltage rating?
A: The maximum collector-emitter voltage (Vce) is 30 V.
Q: What type of package does the transistor come in?
A: The transistors are packaged in a TO3 case.
Tips for Use
Ensure proper heat dissipation when using these transistors to avoid overheating. Always handle with care to prevent damage to the sensitive components. Store in a cool, dry place to maintain their performance and longevity.
2SB337 Silicon PNP Power Transistors ElectronicsBD Bangladesh (BD)
In Bangladesh, you can get the best Quality and original 2SB337 Silicon PNP Power Transistors from ElectronicsBD. We have a large collection of the latest 2SB337 Silicon PNP Power Transistors to purchase. Order online or visit our shop ElectronicsBD to get yours at the lowest price.What is the latest and best price of 2SB337 Silicon PNP Power Transistors in Bangladesh (BD) ?
The latest and special price of 2SB337 Silicon PNP Power Transistors in Bangladesh is BDT 214 Taka. Buy best quality 2SB337 Silicon PNP Power Transistors from ElectronicsBD at a special price in Bangladesh (BD). You can buy 2SB337 Silicon PNP Power Transistors at best price from ElectronicsBD or visit ElectronicsBD Store. বাংলাদেশে আকর্ষণীয় মূল্যে কিনুন 2SB337 Silicon PNP Power Transistors শুধুমাত্র ইলেকট্রনিক্স বিডি ElectronicsBD থেকে। ElectronicsBD বাংলাদেশের সকল প্রধান স্থান যেমন বরিশাল, চট্টগ্রাম, ঢাকা, খুলনা, রাজশাহী, রংপুর, ময়মনসিংহ, সিলেটে সহ সকল স্থানে পণ্য ডেলিভারি করে ।
0738
16 other products in the same category:
Availability:
10000 In Stock
The 2N3904 is an NPN general purpose transistor designed for various electronic applications. With a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V, it offers reliable performance. This transistor is ideal for through hole mounting.
Key Features:
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 300MHz
- Mounting Type: Through Hole
Availability:
10000 In Stock
The TFK897-E NPN Transistor is designed for high-performance switching and amplification applications. Key features include:
- Collector-Emitter Voltage (Vce): 80V
- Collector-Base Voltage (Vcb): 80V
- Emitter-Base Voltage (Veb): 5V
- Collector Current (Ic): 3A
- Power Dissipation (Ptot): 1.5W
- DC Current Gain (hFE): 100-300
- Transition Frequency (ft): 150MHz
- Package: TO-92
Availability:
10000 In Stock
The IRF740 N-Channel MOSFET Transistor is a powerful component for high-voltage applications. This versatile transistor includes:
- High voltage capacity of 400 volts for robust performance in demanding circuits.
- N-Channel enhancement mode for efficient switching operations.
- Low on-resistance and high-speed switching capabilities.
- Ideal for power management, motor control, and other high-power applications.
Availability:
10000 In Stock
MJ15024G - Bipolar (BJT) Single Transistor, Audio, NPN
The MJ15024G is a high-performance Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners, and other linear applications. With a high DC current gain and a broad safe operating area, it ensures reliable performance.
- High DC current gain
- High safe operating area
- Collector-base voltage (Vcbo = 400V)
- Emitter-base voltage (Vebo = 5V)
Availability:
10000 In Stock
Specifications:
- Dynamic resistance: 30mΩ
- I2t value for fusing: 98 A²S
- Maximum peak reverse gate voltage: 5V
- Peak gate current: 4A
- Operating temperature range: -40°C to +125°C
- Storage temperature: -40°C to +150°C
Package:
- 1x TYN612 IC TYN612M Thyristor 12A 600V Unidirectional SCR Thyristor TO-220 Silicon Control Rectifier Transistor
