The 2SA1962 Bipolar Transistor is a high-performance PNP transistor designed for various electronic applications. It features a collector-emitter voltage of -250V, a collector current of -17A, and a collector dissipation of 130W, ensuring robust performance and reliability. This transistor is housed in a TO-3P package, making it ideal for demanding environments.
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The 2SA1962 Bipolar Transistor is a robust PNP transistor designed to handle high power and provide reliable performance in a variety of electronic applications. With a maximum collector-emitter voltage of -250V and a collector current of -17A, this transistor is well-suited for high-power applications. It offers a collector dissipation of 130W, ensuring efficient power management and heat dissipation.
Featuring a DC current gain (hfe) range of 55 to 160 and a transition frequency of 30 MHz, the 2SA1962 provides efficient and fast switching capabilities. Its TO-3P package ensures durability and ease of integration into various electronic projects. The transistor operates within a wide temperature range of -50 to +150°C, making it versatile for different environmental conditions.
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The 2SA1962 Bipolar Transistor is used in high-power applications such as audio amplifiers, power supplies, and switching circuits. Its high voltage and current handling capabilities make it suitable for both commercial and industrial electronic projects.
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