The 2N7000 MOSFET Transistor from Fairchild Semiconductor is a highly efficient component suitable for a variety of electronic applications. It features a maximum continuous drain current of 200mA and a maximum drain source voltage of 60V.
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The 2N7000 MOSFET Transistor by Fairchild Semiconductor is a versatile and reliable N-channel MOSFET designed for various electronic applications. This transistor can handle a maximum continuous drain current of 200mA and a drain source voltage up to 60V, making it suitable for low to moderate power applications.
Its maximum drain source resistance is 5Ω, ensuring efficient operation with minimal power loss. The gate threshold voltage ranges from 0.8V to 3V, providing flexibility in circuit design. With a maximum power dissipation of 400mW, the 2N7000 is well-equipped to manage thermal stress in high-performance environments.
Ideal for switching applications, this MOSFET offers reliable and consistent performance. Its through hole mounting style allows for easy integration into various circuit boards, ensuring a secure and durable connection. The 2N7000 is a practical choice for engineers and hobbyists alike, providing dependable performance at an affordable price point.
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Frequently Asked Questions:
Q: What are the main applications for the 2N7000 MOSFET Transistor?
A: The 2N7000 is ideal for switching applications and low to moderate power electronic projects.
Q: What is the maximum drain source voltage for the 2N7000?
A: The maximum drain source voltage is 60V.
Q: Can the 2N7000 handle high thermal stress?
A: Yes, it has a maximum power dissipation of 400mW, making it suitable for high-performance environments.
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