• Floating channel designed for bootstrap operation
• Fully operational up to +600V
• Tolerant to negative transient voltage
• dV/dt immune

The BTA16-600V 16A TRIAC is a high-performance component designed for efficient power switching applications. With a non-repetitive state current of 168A and a repetitive off-state voltage of 600V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220-3 package.

Key Features:

• Non-Repetitive State Current: 168A
• Rated Repetitive Off-State Voltage VDRM: 600V
• Off-State Leakage Current @ VDRM IDRM: 5μA
• On-State Voltage: 1.55V
• Holding Current Ih Max: 50mA
• Gate Trigger Voltage - Vgt: 1.3V
• Gate Trigger Current - Igt: 50mA
• Maximum Operating Temperature: +125°C
• Minimum Operating Temperature: -40°C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Packaging: Tube

Series: BTA16-600B

Discover the TOSHIBA TTA1943 TRANSISTOR, a PNP power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

The 4N26 Optocoupler is a high-performance component designed for electrical isolation and efficient signal transmission. With a voltage isolation of 7500Vpk and a current transfer ratio of at least 20%, it ensures reliable performance. This optocoupler comes in a 6-DIP package for through hole mounting.

Key Features:

• Part NO.: 4N26M
• Package: 6-DIP (0.300, 7.62mm)
• Number of Channels: 1
• Input Type: DC
• Voltage - Isolation: 7500Vpk
• Current Transfer Ratio (Min): 20% @ 10mA
• Voltage - Output: 30V
• Current - DC Forward (If): 60mA
• Vce Saturation (Max): 500mV
• Output Type: Transistor with Base
• Mounting Type: Through Hole

Supplier: SICSTOCK

• Op-amp coupled with MOSFET at the output.
• Wide power supply range for flexibility.
• Single supply operation (5V to 16V) or dual supply operation (±2.5V to ±8V).
• High output voltage capability (maximum 13.3V).

• High voltage NPN transistor with 160V rating
• Maximum collector current of 1A
• Power dissipation up to 900mW
• Compact TO-92 package for versatile use

The NPN Transistor 25V 0.2A - BC109 offers reliable performance for various electronic applications. With a collector-emitter voltage of 25V and a transition frequency of 150MHz, it's ideal for general-purpose switching and amplification.

• High power handling with 80A continuous drain current and 100V drain-to-source voltage.
• Low Rds On (15mΩ @ 40A, 10V) for minimal conduction losses.
• Wide gate drive voltage range with ±20V max Vgs.
• High efficiency due to low gate charge (182 nC @ 10V).

D400 NPN Silicon Transistor

The D400 NPN Silicon Transistor is a reliable and efficient transistor designed for a wide range of electronic applications. Featuring low power consumption and high performance, this transistor is perfect for enhancing the functionality of your electronic circuits. Key features include:

• Type: NPN Silicon Transistor
• Model: D400
• High performance and reliability
• Low power consumption
• Ideal for various electronic applications

• Type: NPN Silicon Transistor
• Maximum Collector Current (Ic): 500mA
• Maximum Voltage (Vce): 300V
• Saturation Voltage: 500mV @ 2mA, 20mA

MJE15033G - Bipolar (BJT) Single Transistor

The MJE15033G is a high-performance PNP Bipolar Power Transistor designed for a variety of applications, including automotive. It offers a high collector emitter voltage and power dissipation, making it an excellent choice for demanding tasks.

• Transistor Polarity: PNP
• Collector Emitter Voltage (V_ceo): -250V
• Transition Frequency (f_t): 30MHz
• Power Dissipation (P_d): 50W
• DC Collector Current: -8A
• DC Current Gain (h_FE): 30
• Transistor Case Style: TO-220
• No. of Pins: 3
• Operating Temperature Max: 150°C
• Product Range: MJxxxx Series
• Automotive Qualification Standard

The IRF840 N-Channel MOSFET is a high-performance power MOSFET designed for efficient switching applications. With a high voltage rating and robust current handling capabilities, it is ideal for various power control circuits.

Key Features:

• Drain-Source Voltage (Vds): 500V
• Drain-Gate Voltage (Vdg): 500V
• Gate-Source Voltage (Vgs): 20V
• Drain Current (Id): 8.0A
• Power Dissipation (Ptot): 125W
• Type: N-Channel

The IRF540 N Channel MOSFET is an ideal choice for high-power switching applications. Capable of handling over 33A and 100V, this MOSFET comes in a TO-220 package, which fits perfectly into breadboards and perfboards. With a very low Rds(on) down to 44 milliohm and a low threshold voltage of less than 2.5V, it can be directly controlled by a microcontroller running on 5V logic. Heat sinking is simple with the TO-220 package, but thanks to the low Rds(on), you can often manage without additional heat sinking for high loads.

Key Features:

• Handles over 33A and 100V
• TO-220 package for easy integration
• Very low Rds(on) down to 44 milliohm
• Low threshold voltage (Vgs) of less than 2.5V
• Directly controllable from 5V logic microcontrollers

The C106D Thyristor is a high-performance component designed for efficient power switching applications. With a nominal current of 4A and a reverse voltage rating (URRM) of 600V, this thyristor ensures reliable performance. Perfect for through hole mounting with a TO-225AA package.

Key Features:

• Nominal Current: 4A
• Reverse Voltage Rating (URRM): 600V
• Mounting Form: TO-225AA

The D2499 Silicon Diffused Power Transistor is designed for high-performance applications. Key features include:

• Collector-Emitter Voltage (V_ce): 600V
• Collector-Base Voltage (V_cb): 1500V
• Emitter-Base Voltage (V_eb): 5V
• Collector Current (I_c): 6A
• Power Dissipation (P_tot): 50W
• DC Current Gain (h_FE): 8 to 25
• Transition Frequency (f_t): 2MHz
• Package: TO-3PF

• High current capacity for power applications
• Designed for switching and amplification
• Low saturation voltage
• Robust construction for reliable performance