The 2N3055 NPN Power Transistor is a robust component designed for high-power applications. With a maximum collector current of 15A and a collector-emitter breakdown voltage of 60V, it ensures reliable performance. This transistor is ideal for chassis mounting and comes in a TO-3 package.
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The 2N3055 NPN Power Transistor is a high-performance component designed to handle significant power loads efficiently. With a collector-emitter breakdown voltage (Vce) of 60V and a maximum collector current (Ic) of 15A, this transistor is suitable for a wide range of high-power applications. Its robust design ensures reliability and longevity, making it a preferred choice for demanding electronic circuits.
This transistor features a maximum Vce saturation of 3V at 3.3A and 10A, ensuring minimal power loss and optimal performance. The maximum collector cutoff current is 700µA, providing efficient operation. The DC current gain (hFE) is at least 20 at 4A and 4V, ensuring stable performance in various applications. With a maximum power dissipation of 115W, the 2N3055 NPN Power Transistor can handle significant power loads, making it suitable for high-power switching and amplification tasks.
The 2N3055 transistor comes in a TO-3 package, ideal for chassis mounting. Its robust construction and reliable performance make it suitable for applications such as power supply designs, motor control, audio amplifiers, and industrial controls.
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Frequently Asked Questions:
Q: What is the maximum collector current of the 2N3055 NPN Power Transistor?
A: The maximum collector current is 15A.
Q: What is the collector-emitter breakdown voltage of the 2N3055 NPN Power Transistor?
A: The collector-emitter breakdown voltage is 60V.
Q: What type of package does the 2N3055 transistor come in?
A: It comes in a TO-3 package.
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