- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 110A
- Drain-Source Resistance (Rds On): 8mΩ
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2N2222 NPN Transistor
- Write a review
Model: 0170
Discover the 2N2222 NPN Transistor, ideal for general-purpose low-power amplifying or switching applications. With a maximum collector current of 600mA and a high transition frequency of 300 MHz, it's perfect for various electronic projects.
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The 2N2222 NPN Transistor is a widely used component in electronic circuits, known for its versatility and reliability. It is designed for low to medium current, low power, and medium voltage applications, making it suitable for a range of uses, including amplification and switching. Here’s a detailed look at its features, applications, and usage tips:
Features
-
Transistor Type: NPN
-
Max Collector Current (IC): 600mA
-
Max Collector-Emitter Voltage (VCE): 40V
-
Max Collector-Base Voltage (VCB): 75V
-
Max Emitter-Base Voltage (VEBO): 6V
-
Max Collector Dissipation (Pc): 625 mW
-
Max Transition Frequency (fT): 300 MHz
-
DC Current Gain (hFE): 35 – 300
-
Operating Temperature Range: -55°C to +150°C
Applications
-
Amplifiers: Used in low-power amplifying circuits.
-
Switching Circuits: Ideal for switching applications due to its fast response time.
-
Oscillators: Suitable for use in oscillator circuits.
-
Digital and Analog Circuits: Versatile for various digital and analog applications.
Tips for Use
-
Wiring: Ensure proper connection to your circuit to avoid damage.
-
Heat Management: Consider heat dissipation to maintain optimal performance.
-
Compatibility: Check compatibility with other components in your circuit.
The package includes one 2N2222 NPN Transistor, a reliable and versatile component for all your electronic projects.
2N2222 NPN Transistor ElectronicsBD Bangladesh (BD)
In Bangladesh, you can get the best Quality and original 2N2222 NPN Transistor from ElectronicsBD. We have a large collection of the latest 2N2222 NPN Transistor to purchase. Order online or visit our shop ElectronicsBD to get yours at the lowest price.What is the latest and best price of 2N2222 NPN Transistor in Bangladesh (BD) ?
The latest and special price of 2N2222 NPN Transistor in Bangladesh is BDT 7 Taka. Buy best quality 2N2222 NPN Transistor from ElectronicsBD at a special price in Bangladesh (BD). You can buy 2N2222 NPN Transistor at best price from ElectronicsBD or visit ElectronicsBD Store. বাংলাদেশে আকর্ষণীয় মূল্যে কিনুন 2N2222 NPN Transistor শুধুমাত্র ইলেকট্রনিক্স বিডি ElectronicsBD থেকে। ElectronicsBD বাংলাদেশের সকল প্রধান স্থান যেমন বরিশাল, চট্টগ্রাম, ঢাকা, খুলনা, রাজশাহী, রংপুর, ময়মনসিংহ, সিলেটে সহ সকল স্থানে পণ্য ডেলিভারি করে ।Thank you for the reviews ! Your comment is submitted
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FGA15N120 IGBT - High Performance, Low Saturation Voltage
The FGA15N120 IGBT is an advanced NPT trench technology device with superior conduction and switching performances. This product is designed for applications requiring high avalanche ruggedness and easy parallel operation, such as induction heating and microwave ovens.
- NPT Trench Technology, Positive Temperature Coefficient
- Low Saturation Voltage: VCE(sat), typ = 1.9V
- IC = 15A and TC = 25°C
- Low Switching Loss: Eoff, typ = 0.6mJ
- Extremely Enhanced Avalanche Capability
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Discover the TOSHIBA TTA1943 TRANSISTOR, a PNP power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.
The 2N7000 MOSFET Transistor from Fairchild Semiconductor is a highly efficient component suitable for a variety of electronic applications. It features a maximum continuous drain current of 200mA and a maximum drain source voltage of 60V.
Key Features:
- Maximum Continuous Drain Current: 200mA
- Maximum Drain Source Voltage: 60V
- Maximum Drain Source Resistance: 5Ω
- Gate Threshold Voltage (VGS): Min = 0.8V, Max = 3V
- Maximum Power Dissipation: 400mW
Specifications:
- Type: NPN Silicon High-Frequency Transistor
- Collector-Emitter Voltage (Vce): 15V
- Collector-Base Voltage (Vcb): 15V
- Emitter-Base Voltage (Veb): 2V
- Collector Current (Ic): 25mA
- Power Dissipation (Ptot): 300mW
- Transition Frequency (ft): 5GHz
- Package Type: TO-50
- Operating Temperature Range: -65°C to +150°C
Package:
1x BFR91A Transistor
The BTA16-600V 16A TRIAC is a high-performance component designed for efficient power switching applications. With a non-repetitive state current of 168A and a repetitive off-state voltage of 600V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220-3 package.
Key Features:
- Non-Repetitive State Current: 168A
- Rated Repetitive Off-State Voltage VDRM: 600V
- Off-State Leakage Current @ VDRM IDRM: 5μA
- On-State Voltage: 1.55V
- Holding Current Ih Max: 50mA
- Gate Trigger Voltage - Vgt: 1.3V
- Gate Trigger Current - Igt: 50mA
- Maximum Operating Temperature: +125°C
- Minimum Operating Temperature: -40°C
- Mounting Style: Through Hole
- Package / Case: TO-220-3
- Packaging: Tube
Series: BTA16-600B
2N3819 JFET N-Channel Transistor
The 2N3819 JFET N-Channel Transistor is designed for small signal amplification, providing reliable performance in various electronic applications. Key features include:
- JFET - N Type Channel transistor for small signal amplification.
- Drain-Source Voltage (Vds): 25 VDC.
- Drain-Gate Voltage (Vdg): 25 VDC.
- Gate-Source Voltage (Vgs): 25 VDC.
- Forward Gate Current (Igf): 10 mA.
- Power dissipation: 350 mW.
- On Characteristics (hFE): 20 mA Idss @ 15 Vds, Vgs =0.
- Pre-Amplifier: Low Level, Low Noise NPN Transistor
- Current Gain (hFE): 60 to 1000 (Good Linearity)
- Continuous Collector Current (IC): 100mA
- Collector-Emitter Voltage (VCEO): 45V
The D2499 Silicon Diffused Power Transistor is designed for high-performance applications. Key features include:
- Collector-Emitter Voltage (Vce): 600V
- Collector-Base Voltage (Vcb): 1500V
- Emitter-Base Voltage (Veb): 5V
- Collector Current (Ic): 6A
- Power Dissipation (Ptot): 50W
- DC Current Gain (hFE): 8 to 25
- Transition Frequency (ft): 2MHz
- Package: TO-3PF
- Type: NPN Medium Power Transistor
- Application: Ideal for voltage regulation, relay driver, generic switch, audio power amplifier, and DC-DC converter applications
- Peak Collector Current: 6A
- Collector to Base Voltage: 60V
The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.
Key Features:
- Part NO.: FQA24N60
- Package: TO-3P
- FET Type: MOSFET N-Channel, Metal Oxide
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 23.5A
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) @ Vgs: 145nC @ 10V
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- Supplier: SICSTOCK
The 18N50 N-Channel Power MOSFET is designed for high-efficiency power switching applications. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 18A, it offers reliable performance. Ideal for various demanding electronic circuits.
Key Features:
- Drain to Source Voltage (Vdss): 500V
- Continuous Drain Current (Id): 18A
- High Efficiency and Performance
- N-Channel MOSFET
Specifications:
- Type: NPN Bipolar Junction Transistor
- Collector Current: 150mA (Max)
- Voltage Ratings:
- Collector-Emitter: 50V
- Collector-Base: 60V
- Emitter-Base: 5V
- Power Dissipation: 400mW
- Frequency: 200MHz
- Gain: 70 to 700
- Package: TO-92
Package:
- 1 x C945 Transistor (TO-92 Package)
BD136 PNP Power Transistor
The BD136 is a versatile PNP power transistor, ideal for switching and amplification circuits. Key features include:
- Plastic casing PNP Transistor
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- Collector-Emitter voltage (VCE) of 45V
- Collector-Base voltage (VCB) of 45V
- Emitter Base Breakdown Voltage (VBE) of 5V
- DC current gain (hFE) of 40 to 250
- Available in TO-225 package
MJE340 NPN Power Transistor is ideal for high-voltage electronic circuits. Key features include:
- Type: n-p-n
- Collector-Emitter Voltage: 300 V
- Collector-Base Voltage: 300 V
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- Collector Current: 0.5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 30 to 240
- Operating Temperature Range: -65 to +150 °C
- Package: TO-126
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- Durable Silicon Material: Ensures stability and longevity
- Power Diode Capability: Functions efficiently as a power tube
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FGA15N120 IGBT - High Performance, Low Saturation Voltage
The FGA15N120 IGBT is an advanced NPT trench technology device with superior conduction and switching performances. This product is designed for applications requiring high avalanche ruggedness and easy parallel operation, such as induction heating and microwave ovens.
- NPT Trench Technology, Positive Temperature Coefficient
- Low Saturation Voltage: VCE(sat), typ = 1.9V
- IC = 15A and TC = 25°C
- Low Switching Loss: Eoff, typ = 0.6mJ
- Extremely Enhanced Avalanche Capability
- TO-3P Package
Discover the TOSHIBA TTA1943 TRANSISTOR, a PNP power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.
The 2N7000 MOSFET Transistor from Fairchild Semiconductor is a highly efficient component suitable for a variety of electronic applications. It features a maximum continuous drain current of 200mA and a maximum drain source voltage of 60V.
Key Features:
- Maximum Continuous Drain Current: 200mA
- Maximum Drain Source Voltage: 60V
- Maximum Drain Source Resistance: 5Ω
- Gate Threshold Voltage (VGS): Min = 0.8V, Max = 3V
- Maximum Power Dissipation: 400mW
Specifications:
- Type: NPN Silicon High-Frequency Transistor
- Collector-Emitter Voltage (Vce): 15V
- Collector-Base Voltage (Vcb): 15V
- Emitter-Base Voltage (Veb): 2V
- Collector Current (Ic): 25mA
- Power Dissipation (Ptot): 300mW
- Transition Frequency (ft): 5GHz
- Package Type: TO-50
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Package:
1x BFR91A Transistor
The BTA16-600V 16A TRIAC is a high-performance component designed for efficient power switching applications. With a non-repetitive state current of 168A and a repetitive off-state voltage of 600V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220-3 package.
Key Features:
- Non-Repetitive State Current: 168A
- Rated Repetitive Off-State Voltage VDRM: 600V
- Off-State Leakage Current @ VDRM IDRM: 5μA
- On-State Voltage: 1.55V
- Holding Current Ih Max: 50mA
- Gate Trigger Voltage - Vgt: 1.3V
- Gate Trigger Current - Igt: 50mA
- Maximum Operating Temperature: +125°C
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- Mounting Style: Through Hole
- Package / Case: TO-220-3
- Packaging: Tube
Series: BTA16-600B
2N3819 JFET N-Channel Transistor
The 2N3819 JFET N-Channel Transistor is designed for small signal amplification, providing reliable performance in various electronic applications. Key features include:
- JFET - N Type Channel transistor for small signal amplification.
- Drain-Source Voltage (Vds): 25 VDC.
- Drain-Gate Voltage (Vdg): 25 VDC.
- Gate-Source Voltage (Vgs): 25 VDC.
- Forward Gate Current (Igf): 10 mA.
- Power dissipation: 350 mW.
- On Characteristics (hFE): 20 mA Idss @ 15 Vds, Vgs =0.
- Pre-Amplifier: Low Level, Low Noise NPN Transistor
- Current Gain (hFE): 60 to 1000 (Good Linearity)
- Continuous Collector Current (IC): 100mA
- Collector-Emitter Voltage (VCEO): 45V
The D2499 Silicon Diffused Power Transistor is designed for high-performance applications. Key features include:
- Collector-Emitter Voltage (Vce): 600V
- Collector-Base Voltage (Vcb): 1500V
- Emitter-Base Voltage (Veb): 5V
- Collector Current (Ic): 6A
- Power Dissipation (Ptot): 50W
- DC Current Gain (hFE): 8 to 25
- Transition Frequency (ft): 2MHz
- Package: TO-3PF
- Type: NPN Medium Power Transistor
- Application: Ideal for voltage regulation, relay driver, generic switch, audio power amplifier, and DC-DC converter applications
- Peak Collector Current: 6A
- Collector to Base Voltage: 60V
The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.
Key Features:
- Part NO.: FQA24N60
- Package: TO-3P
- FET Type: MOSFET N-Channel, Metal Oxide
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 23.5A
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) @ Vgs: 145nC @ 10V
- Input Capacitance (Ciss) @ Vds: 5500pF @ 25V
- Power - Max: 310W
- Mounting Type: Through Hole
- Supplier: SICSTOCK
The 18N50 N-Channel Power MOSFET is designed for high-efficiency power switching applications. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 18A, it offers reliable performance. Ideal for various demanding electronic circuits.
Key Features:
- Drain to Source Voltage (Vdss): 500V
- Continuous Drain Current (Id): 18A
- High Efficiency and Performance
- N-Channel MOSFET
Specifications:
- Type: NPN Bipolar Junction Transistor
- Collector Current: 150mA (Max)
- Voltage Ratings:
- Collector-Emitter: 50V
- Collector-Base: 60V
- Emitter-Base: 5V
- Power Dissipation: 400mW
- Frequency: 200MHz
- Gain: 70 to 700
- Package: TO-92
Package:
- 1 x C945 Transistor (TO-92 Package)
BD136 PNP Power Transistor
The BD136 is a versatile PNP power transistor, ideal for switching and amplification circuits. Key features include:
- Plastic casing PNP Transistor
- High DC Current Gain (hFE), typically 80 at IC=10mA
- Continuous Collector current (IC) of 1.5A
- Collector-Emitter voltage (VCE) of 45V
- Collector-Base voltage (VCB) of 45V
- Emitter Base Breakdown Voltage (VBE) of 5V
- DC current gain (hFE) of 40 to 250
- Available in TO-225 package
MJE340 NPN Power Transistor is ideal for high-voltage electronic circuits. Key features include:
- Type: n-p-n
- Collector-Emitter Voltage: 300 V
- Collector-Base Voltage: 300 V
- Emitter-Base Voltage: 5 V
- Collector Current: 0.5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 30 to 240
- Operating Temperature Range: -65 to +150 °C
- Package: TO-126
- High Power Handling: Suitable for power-intensive applications
- Low-Frequency Performance: Optimized for low-frequency circuits
- Durable Silicon Material: Ensures stability and longevity
- Power Diode Capability: Functions efficiently as a power tube
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 110A
- Drain-Source Resistance (Rds On): 8mΩ
FGA15N120 IGBT - High Performance, Low Saturation Voltage
The FGA15N120 IGBT is an advanced NPT trench technology device with superior conduction and switching performances. This product is designed for applications requiring high avalanche ruggedness and easy parallel operation, such as induction heating and microwave ovens.
- NPT Trench Technology, Positive Temperature Coefficient
- Low Saturation Voltage: VCE(sat), typ = 1.9V
- IC = 15A and TC = 25°C
- Low Switching Loss: Eoff, typ = 0.6mJ
- Extremely Enhanced Avalanche Capability
- TO-3P Package
Discover the TOSHIBA TTA1943 TRANSISTOR, a PNP power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.
The 2N7000 MOSFET Transistor from Fairchild Semiconductor is a highly efficient component suitable for a variety of electronic applications. It features a maximum continuous drain current of 200mA and a maximum drain source voltage of 60V.
Key Features:
- Maximum Continuous Drain Current: 200mA
- Maximum Drain Source Voltage: 60V
- Maximum Drain Source Resistance: 5Ω
- Gate Threshold Voltage (VGS): Min = 0.8V, Max = 3V
- Maximum Power Dissipation: 400mW
Specifications:
- Type: NPN Silicon High-Frequency Transistor
- Collector-Emitter Voltage (Vce): 15V
- Collector-Base Voltage (Vcb): 15V
- Emitter-Base Voltage (Veb): 2V
- Collector Current (Ic): 25mA
- Power Dissipation (Ptot): 300mW
- Transition Frequency (ft): 5GHz
- Package Type: TO-50
- Operating Temperature Range: -65°C to +150°C
Package:
1x BFR91A Transistor