The 10N60C N-Channel MOSFET is a high-efficiency power transistor designed for demanding applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A, it ensures reliable performance. This MOSFET features a TO-220F package for through hole mounting.
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The 10N60C N-Channel MOSFET is a robust and efficient component designed for high-power applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A, this MOSFET is suitable for a wide range of demanding electronic circuits. Its high efficiency and low Rds On (750 mOhm at 5A, 10V) ensure minimal power loss and optimal performance.
This MOSFET features a maximum gate threshold voltage (Vgs(th)) of 4.5V at 250µA, providing precise control in switching applications. The gate charge (Qg) is 40nC at 10V, and the input capacitance (Ciss) is 1600pF at 25V, contributing to the component's high performance and reliability.
The 10N60C N-Channel MOSFET is designed for through hole mounting and comes in a TO-220F package, making it easy to integrate into various circuit designs. With a maximum power dissipation of 50W, this MOSFET can handle significant power loads, ensuring dependable performance in demanding environments. Its operating junction temperature (Tj) can reach up to 150°C, providing robustness under high-temperature conditions.
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Frequently Asked Questions:
Q: What is the drain-to-source voltage (Vdss) of the 10N60C MOSFET?
A: The drain-to-source voltage is 600V.
Q: What is the continuous drain current (Id) of the 10N60C MOSFET?
A: The continuous drain current is 10A.
Q: What is the power dissipation of the 10N60C MOSFET?
A: The power dissipation is 50W.
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