• Collector-Emitter Voltage (Vceo): 100V
• Collector-Base Voltage (Vcbo): 100V
• Collector Current (Ic): 25.0A
• hfe: 15-75 @ 3000mA

✔ Avalanche Rugged Technology – Ensures high durability and reliability
✔ Rugged Gate Oxide Technology – Provides better gate protection
✔ Lower Input Capacitance – Reduces switching losses for efficiency
✔ Improved Gate Charge – Enhances performance in high-frequency applications

• Type: PNP
• Collector-Emitter Voltage: -80V
• Collector-Base Voltage: -80V
• Collector Current: -5A

• High Voltage & Current Handling: 200V Drain-Source voltage and 30A continuous drain current.
• Low Rds On for efficient power switching.
• 180W Maximum Power Dissipation, ensuring stable performance under load.
• Gate-Source Voltage up to 20V for flexible control.

D400 NPN Silicon Transistor

The D400 NPN Silicon Transistor is a reliable and efficient transistor designed for a wide range of electronic applications. Featuring low power consumption and high performance, this transistor is perfect for enhancing the functionality of your electronic circuits. Key features include:

• Type: NPN Silicon Transistor
• Model: D400
• High performance and reliability
• Low power consumption
• Ideal for various electronic applications

The BD140 PNP Power Transistor is ideal for audio amplifiers, switching loads under 1.5A, battery chargers, power supplies, motor drivers, and Darlington pairs. This versatile transistor ensures reliable performance in various electronic applications.

Key Features:

• Audio Amplifiers
• Switching Loads under 1.5A
• Battery Chargers
• Power Supplies
• Motor Driver
• Darlington Pair

• High Power Dissipation: Max 300 W
• High Drain-Source Voltage: 500 V
• Maximum Drain Current: 21 A
• Low On-State Resistance: 0.25 Ohm

• PNP Transistor: Suitable for low to medium power amplification and switching circuits.
• High Current Handling: Supports up to 600mA of collector current.
• Wide Voltage Range: Maximum collector-emitter breakdown of 40V.
• DC Current Gain: Provides a minimum current gain of 100 at 150mA and 2V.

Key Features:

• Type: Thyristors - SCRs
• Off-State Voltage: 500V
• Gate Trigger Voltage (Max): 1.5V
• Gate Trigger Current (Max): 15mA
• On-State Voltage (Max): 1.75V
• On-State Current (AV) (Max): 7.5A
• On-State Current (RMS) (Max): 12A
• Hold Current (Max): 20mA
• Off-State Current (Max): 500µA
• Non-Repetitive Surge Current: 120A, 132A
• Operating Temperature: -40°C to 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Base Part Number: BT151

• N-Channel MOSFET for high-power switching applications
• Capable of handling up to 200 V and 31A at 25°C
• Low Rds On for better efficiency: 75mOhm @ 15.5A, 10V
• High power dissipation capacity of 180W (Tc)

• PNP polarity transistor for power applications
• High DC current gain of 25 at 1.5A and 4V
• Maximum operating frequency of 3 MHz
• Maximum collector-emitter voltage of 100V

The BTA26-600 24A 600V TRIAC is a high-performance component designed for efficient power switching applications. With a gate turn-on voltage of 1.3V and a peak off-state voltage of 600V, it ensures reliable performance in demanding environments. This TRIAC is perfect for through hole mounting.

Key Features:

• Gate Turn-On Voltage (Vgt): 1.3V
• Peak Off-State Voltage (Vdrm): 600V
• On-State Current (It): 25.0A
• Gate Current (Igt): 35mA
• Average Gate Power Dissipation (Pg): 1W
• Typical Voltage Change Over Time (dV/dT): 500V/µs

The 78L09 Positive Voltage Regulator in a TO-92 package is designed for a wide range of applications. This regulator provides a fixed output voltage of +9V and can deliver up to 100mA of current. It features internal thermal overload protection, short-circuit current limiting, and output transistor safe-area compensation, ensuring reliable performance without external components.

Key Features:

• Output Voltage Range: +9V
• Output current up to 100mA
• No external components required
• Internal thermal overload protection
• Internal short-circuit current limiting
• Output transistor safe-area compensation
• Output voltage offered in 4% tolerance

The IRF540 N Channel MOSFET is an ideal choice for high-power switching applications. Capable of handling over 33A and 100V, this MOSFET comes in a TO-220 package, which fits perfectly into breadboards and perfboards. With a very low Rds(on) down to 44 milliohm and a low threshold voltage of less than 2.5V, it can be directly controlled by a microcontroller running on 5V logic. Heat sinking is simple with the TO-220 package, but thanks to the low Rds(on), you can often manage without additional heat sinking for high loads.

Key Features:

• Handles over 33A and 100V
• TO-220 package for easy integration
• Very low Rds(on) down to 44 milliohm
• Low threshold voltage (Vgs) of less than 2.5V
• Directly controllable from 5V logic microcontrollers

• NPN transistor for medium-frequency applications
• High current gain
• Suitable for amplification in audio and RF circuits
• Low noise operation

The 20N60 IGBT is a high-performance insulated-gate bipolar transistor (IGBT) designed for efficient power switching applications. With a maximum collector-emitter voltage (VCE) of 600V and a continuous collector current (IC) of 20A, it ensures reliable performance. Available in PG-TO-220-3-1 and PG-TO-247-3 packages.

Key Features:

• Type: SGP20N60 and SGW20N60
• Collector-Emitter Voltage (VCE): 600V
• Continuous Collector Current (IC): 20A
• Saturation Voltage (VCE(sat)): 2.4V
• Maximum Junction Temperature (Tj): 150°C
• Marking: G20N60
• Package: PG-TO-220-3-1 and PG-TO-247-3