Transistors

Specifications:

• Type: NPN Silicon High-Frequency Transistor
• Collector-Emitter Voltage (Vce): 15V
• Collector-Base Voltage (Vcb): 15V
• Emitter-Base Voltage (Veb): 2V
• Collector Current (Ic): 25mA
• Power Dissipation (Ptot): 300mW
• Transition Frequency (ft): 5GHz
• Package Type: TO-50
• Operating Temperature Range: -65°C to +150°C

Package:

1x BFR91A Transistor

• Original Brand New Transistor Amplifier Chip
• Voltage: 160V
• Current: 12A
• Package Type: TO-3P

• Darlington Medium-power NPN Transistor
• High DC Current Gain (hFE), typically 1000
• Continuous Collector Current (IC): 5A
• Collector-Emitter Voltage (VCE): 100V

Discover the S8050 NPN Transistor, ideal for Class B push-pull audio amplifiers and general-purpose applications in Bangladesh. It offers a collector current of up to 700mA and a collector-emitter voltage of up to 20V, making it suitable for a variety of electronic projects.

• N-Channel MOSFET for high-power switching applications
• Capable of handling up to 200 V and 31A at 25°C
• Low Rds On for better efficiency: 75mOhm @ 15.5A, 10V
• High power dissipation capacity of 180W (Tc)

• High power dissipation of 186W for efficient operation.
• Wide operating temperature range from -55°C to +150°C.
• Continuous collector current up to 30A for high-performance applications.
• Compact dimensions for space-saving designs.

• Medium power transistor with hfe gain up to 50
• Improved linearity of hfe gain
• Maximum voltage across collector and emitter: 100V
• Maximum current allowed through collector: 3A DC

Discover the 2N2222 NPN Transistor, ideal for general-purpose low-power amplifying or switching applications. With a maximum collector current of 600mA and a high transition frequency of 300 MHz, it's perfect for various electronic projects.

• N-Channel power MOSFET for high-efficiency switching applications
• Maximum drain-to-source voltage (VDS): 200V
• Continuous drain current (ID): 9A
• High pulsed drain current: 36A

• Low voltage, high current PNP transistor.
• High current gain (hFE: 85 to 300).
• Suitable for Class B push-pull transistor configurations.
• Compact TO-92 package for easy integration.

• High Power Handling: Suitable for power-intensive applications
• Low-Frequency Performance: Optimized for low-frequency circuits
• Durable Silicon Material: Ensures stability and longevity
• Power Diode Capability: Functions efficiently as a power tube

• High continuous drain current of up to 35A.
• Handles pulsed drain currents up to 50A.
• Robust drain-to-source breakdown voltage of 60V.
• Low drain-source resistance (0.018 Ohms) for minimal power loss.

• NPN Transistor: Ideal for low to medium power amplification.
• High Current Handling: Capable of handling up to 500mA of collector current.
• Wide Voltage Range: Operates within a collector-emitter voltage of up to 40V.
• High Gain: Offers a current gain range of 20 – 300.

• PNP transistor with high current capacity
• Designed for switching and amplification in power applications
• High collector-to-emitter voltage
• Capable of handling pulse currents up to 13A

Discover the TOSHIBA TTC5200 TRANSISTOR, an NPN power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

• N-Channel Power MOSFET
• High continuous drain current capacity (9.2A)
• Low drain to source resistance (0.27 Ohms)
• Fast rise time and fall time (30nS and 20nS respectively)

• PNP Transistor: Suitable for low to medium power amplification and switching circuits.
• High Current Handling: Supports up to 600mA of collector current.
• Wide Voltage Range: Maximum collector-emitter breakdown of 40V.
• DC Current Gain: Provides a minimum current gain of 100 at 150mA and 2V.

• NPN power transistor for high-efficiency performance.
• Suitable for high-speed switching applications.
• Designed for use in audio and power amplification circuits.
• Maximum collector current rating of 1.5 A for handling larger loads.

Discover the TOSHIBA TTA1943 TRANSISTOR, a PNP power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

• Floating channel designed for bootstrap operation
• Fully operational up to +600V
• Tolerant to negative transient voltage
• dV/dt immune

• High voltage rating of 1500V for superior performance in demanding applications
• Low saturation voltage of 5V (Max.) ensuring efficient operation
• High-speed switching capabilities with a typical rise time of 0.3 µs
• Built-in damper type for enhanced protection

• Collector-Emitter Voltage (Vceo): 100V
• Collector-Base Voltage (Vcbo): 100V
• Collector Current (Ic): 25.0A
• hfe: 15-75 @ 3000mA

The BS170 N-Channel MOSFET Transistor is a Pb-free device designed for low voltage and current applications. It boasts low offset and error voltage, high saturation current capability, and fast switching (TON = 4ns). Easily driven without a buffer, this MOSFET transistor ensures rugged and reliable performance.

Key Features:

• Pb-Free device
• Low offset and error voltage
• Easily driven without buffer
• High density cell design to minimize ON-state resistance RDS(ON)
• Voltage controlled small signal switch
• Particularly suitable for low voltage, low current application
• High saturation current capability
• Rugged and Reliable
• Fast switching (TON = 4ns)

• High current capacity, capable of continuous drain current of 130-210A
• Supports a drain-to-source voltage of 60V
• Avalanche energy rating of 800 mJ for reliable performance under high-stress conditions
• Junction and storage temperature range from -55 to 175°C

• NPN transistor with plastic casing for durability.
• Continuous collector current (IC) of 1.5A for high-power applications.
• High collector-emitter voltage (VCE) of 80V.
• Base current (Ib) of 0.5A for efficient switching.

The 2N7000 MOSFET Transistor from Fairchild Semiconductor is a highly efficient component suitable for a variety of electronic applications. It features a maximum continuous drain current of 200mA and a maximum drain source voltage of 60V.

Key Features:

• Maximum Continuous Drain Current: 200mA
• Maximum Drain Source Voltage: 60V
• Maximum Drain Source Resistance: 5Ω
• Gate Threshold Voltage (VGS): Min = 0.8V, Max = 3V
• Maximum Power Dissipation: 400mW

• High Current Handling: Supports a continuous drain current of 49A at 25°C.
• High Voltage Tolerance: Maximum Drain-Source Voltage (VDS) of 55V.
• Fast Switching Speed:
  • Rise time: 60ns
  • Fall time: 45ns

• High power dissipation of 65 W, suitable for amplifiers and switching applications.
• Maximum collector current of 6 A, capable of handling high current loads.
• Wide operating junction temperature range from -65°C to +150°C.
• Reliable performance with a DC current gain of 30.

The BTA41 40A 600V TRIAC is a robust component designed for high-power switching applications. With a rated average on-state current of 40A and a repetitive peak reverse voltage of 600V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TOP3 package.

Key Features:

• Rated Average On-State Current: 40A
• Mounting Type: Through Hole
• Package Type: TOP3
• Maximum Gate Trigger Current: 100mA
• Repetitive Peak Reverse Voltage: 600V
• Surge Current Rating: 420A
• Pin Count: 3
• Maximum Gate Trigger Voltage: 1.3V
• Repetitive Peak Forward Blocking Voltage: 600V
• Maximum Holding Current: 80mA
• Repetitive Peak Off-State Current: 0.005mA
• Maximum Operating Temperature: +125°C
• Minimum Operating Temperature: -40°C
• Peak On-State Voltage: 1.55V

Package includes: 1x BTA41-600B

✔ Avalanche Rugged Technology – Ensures high durability and reliability
✔ Rugged Gate Oxide Technology – Provides better gate protection
✔ Lower Input Capacitance – Reduces switching losses for efficiency
✔ Improved Gate Charge – Enhances performance in high-frequency applications