• High voltage NPN transistor with 160V rating
• Maximum collector current of 1A
• Power dissipation up to 900mW
• Compact TO-92 package for versatile use

• High Voltage Rating: Supports 400V, suitable for high-voltage applications.
• High Current Capacity: Can handle up to 5.5A, making it ideal for power control circuits.
• Fast Switching: Offers fast switching capabilities, reducing power loss and improving efficiency.
• Low Gate-Source Voltage: Operates efficiently at low gate-source voltages, providing better control.

Discover the S8050 NPN Transistor, ideal for Class B push-pull audio amplifiers and general-purpose applications in Bangladesh. It offers a collector current of up to 700mA and a collector-emitter voltage of up to 20V, making it suitable for a variety of electronic projects.

The BC547 is a versatile NPN transistor, widely used in electronic circuits for various applications. It features a TO-92 package and is known for its reliability and efficiency. Perfect for both amateur and professional use.

Key Features:

• Pinout Configuration:
  • Collector (C): Current flows in through the collector.
  • Base (B): Controls the biasing of the transistor.
  • Emitter (E): Current drains out through the emitter.
• DC Current Gain (h_FE): Max value of 800
• Continuous Collector Current (I_C): Up to 100mA
• Emitter-Base Voltage (V_BE): 6V
• Base Current (I_B): Max of 5mA

• Drain-Source Voltage (Vds): -55V
• Gate-Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id): -74A
• Power Dissipation (Ptot): 200W

• Type: PNP High-Voltage Transistor
• Collector-Base Voltage: 160V
• Collector-Emitter Voltage: 150V
• Emitter-Base Voltage: 5V

• High-Quality Original Japan Make: Authentic TOSHIBA C5198 transistor for reliable performance.
• High Power Handling: Designed for high-power audio amplification and switching.
• Low Distortion: Ensures clean and accurate signal output.

The D880 NPN Power Transistor is designed for audio amplification and switching applications. Key features include:

• Low-frequency power amplifier
• DC Current Gain (hFE): 60 to 300
• Continuous Collector Current (I_c): 3A
• Collector-Emitter Voltage (V_CE): 60V
• Collector-Base Voltage (V_CB): 60V
• Emitter-Base Voltage (V_EB): 7V
• Available in TO-220 package

The 2SC4793 NPN transistor is designed for high voltage and high frequency applications. With a maximum collector power dissipation of 20W, this silicon transistor provides excellent performance in various electronic circuits. Key features include:

• Type Designator: 2SC4793
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector-Base Voltage: 230V
• Maximum Collector-Emitter Voltage: 230V
• Maximum Emitter-Base Voltage: 5V
• Maximum Collector Current: 1A
• Maximum Temperature: 150°C
• Transition Frequency: 100MHz
• Collector Capacitance: 20pF
• Minimum Forward Current Transfer Ratio: 100

A1015 Bipolar Transistor – PNP Type

The A1015 is a reliable PNP bipolar transistor, ideal for audio frequency amplifier applications and switching purposes. Key features include:

• Type: PNP
• Collector-Emitter Voltage: -50V
• Collector-Base Voltage: -50V
• Emitter-Base Voltage: -5V
• Collector Current: -0.15A
• Collector Dissipation: 0.4W
• DC Current Gain (hFE): 70 to 400
• Transition Frequency: 80MHz
• Operating and Storage Junction Temperature Range: -55°C to +125°C
• Package: TO-92

• High Voltage & Current Handling: 200V Drain-Source voltage and 30A continuous drain current.
• Low Rds On for efficient power switching.
• 180W Maximum Power Dissipation, ensuring stable performance under load.
• Gate-Source Voltage up to 20V for flexible control.

Enhance your electronic projects with the Bangladesh MJE13003 NPN Power Transistor. This high-voltage, high-speed power transistor is perfect for applications requiring robust performance and reliability.

• Collector-Emitter Voltage (Vceo): 400V
• Collector Current (Ic): 4.0A
• hfe: 8-40 @ 2000mA
• Power Dissipation (Ptot): 75W
• Current-Gain-Bandwidth (ftotal): 4MHz
• Type: NPN

The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.

Key Features:

• Part NO.: FQA24N60
• Package: TO-3P
• FET Type: MOSFET N-Channel, Metal Oxide
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 23.5A
• Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) @ Vgs: 145nC @ 10V
• Input Capacitance (Ciss) @ Vds: 5500pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Supplier: SICSTOCK

Get reliable power performance with our High-Performance 2SB337 Silicon PNP Power Transistors. Designed for various electronic applications, these transistors provide excellent efficiency and durability.

• Type Designator: 2SB337
• Material: Ge (Germanium)
• Polarity: PNP
• Maximum Collector Power Dissipation (Pc): 12 W
• Maximum Collector-Base Voltage (Vcb): 40 V
• Maximum Collector-Emitter Voltage (Vce): 30 V
• Maximum Emitter-Base Voltage (Veb): 1 V
• Maximum Collector Current (Ic max): 7 A
• Max. Operating Junction Temperature (Tj): 90 °C
• Transition Frequency (ft): 0.125 MHz
• Forward Current Transfer Ratio (hFE), MIN: 50
• Noise Figure: -
• Package: TO3

• Bi-Polar NPN Transistor
• DC Current Gain (hFE): 900 (Maximum)
• Continuous Collector Current (IC): 200mA
• Emitter Base Voltage (VBE): 5V

• Bi-Polar PNP Amplifier Transistor
• DC Current Gain (hFE) is 800 maximum
• Continuous Collector current (IC) is 100mA
• Peak Collector current (Ic) is 200mA